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元器件品牌
MRFE6VP6300HR3_11
[FREESCALE]
RF Power Field Effect Transistors; 射频功率场效应晶体管
元器件型号：
MRFE6VP6300HR3_11
生产厂家：
FREESCALE SEMICONDUCTOR, INC
描述和应用：
RF Power Field Effect Transistors
射频功率场效应晶体管
晶体 晶体管 功率场效应晶体管 射频
PDF文件：
总15页 (文件大小：992K)
下载文档：
下载PDF数据表文档文件
型号参数：MRFE6VP6300HR3_11参数
查看货源
MRFE6VP6300HSR3
RF Power Field Effect Transistors
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FREESCALE
MRFE6VP8600H
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
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MRFE6VP8600HR5
LDMOS Broadband RF Power Transistor, 470-860 MHz, 600 W, 50 V
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on line
156
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3
PHILIPS
MRFE6VP8600HSR5
LDMOS Broadband RF Power Transistor, 470-860 MHz, 600 W, 50 V
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156
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MRFE6VS25N
RF Power LDMOS Transistor
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MRFE6VS25NR1
RF Power LDMOS Transistor
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on line
156
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65
FREESCALE
MRFE8VP8600H
MRFE8VP8600H
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156
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MRFF959T1
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SC-75, SC-90, 3 PIN
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156
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0
PHILIPS
MRFG35002N6AT1
Gallium Arsenide PHEMT RF Power Field Effect Transistor
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42
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MRFG35002N6T1
Gallium Arsenide PHEMT RF Power Field Effect Transistor
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156
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12
FREESCALE
MRFG35002N6T1
Gallium Arsenide PHEMT RF Power Field Effect Transistor
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156
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11
FREESCALE
MRFG35002N6T1_08
Gallium Arsenide PHEMT RF Power Field Effect Transistor
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156
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8
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Gallium Arsenide PHEMT RF Power Field Effect Transistor
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23
FREESCALE
MRFG35003ANT1
C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET, ROHS COMPLIANT, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN
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156
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0
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MRFG35003M6T1
Gallium Arsenide PHEMT RF Power Field Effect Transistor
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18
FREESCALE
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