RO4350 [FREESCALE]
RF Power Field Effect Transistor; 射频功率场效应晶体管
| 型号： | RO4350 |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistor |
| 文件： | 总16页 (文件大小：808K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MRF8S9102N
Rev. 0, 2/2011
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 865 to
960 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
MRF8S9102NR3
•
Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ
750 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel
=
865--960 MHz, 28 W AVG., 28 V
SINGLE W--CDMA
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
LATERAL N--CHANNEL
RF POWER MOSFET
G
η
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
920 MHz
940 MHz
960 MHz
(dB)
23.1
23.1
22.8
(%)
36.4
36.4
36.6
6.3
6.2
6.1
--35.5
--36.1
--35.8
•
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 144 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
Typical Pout @ 1 dB Compression Point ≃ 100 Watts CW
CASE 2021--03, STYLE 1
O M -- 7 8 0 -- 2
880 MHz
Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ
750 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel
PLASTIC
•
=
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
G
η
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
865 MHz
880 MHz
895 MHz
(dB)
22.9
23.0
22.8
(%)
35.4
35.5
35.6
6.4
6.2
6.0
--34.7
--35.1
--35.7
Features
•
•
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
•
•
•
•
•
•
•
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +70
--6.0, +10
32, +0
Unit
Vdc
Vdc
Vdc
°C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
--65 to +150
150
T
C
°C
(1,2)
T
J
225
°C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
°C/W
JC
Case Temperature 81°C, 28 W CW, 28 Vdc, I
Case Temperature 80°C, 100 W CW, 28 Vdc, I
= 750 mA, 880 MHz
0.63
0.58
DQ
= 750 mA, 880 MHz
DQ
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 70 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
I
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 400 μAdc)
V
V
1.5
—
2.3
3.1
6.2
0.2
3.0
—
Vdc
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 750 mAdc)
DS
D
(4)
Fixture Gate Quiescent Voltage
(V = 28 Vdc, I = 750 mAdc, Measured in Functional Test)
V
4.6
0.1
7.6
0.3
DD
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 1.7 Adc)
V
GS
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. V
= 2 x V
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
GG
GS(Q)
schematic.
(continued)
MRF8S9102NR3
RF Device Data
Freescale Semiconductor
2
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 750 mA, P = 28 W Avg., f = 920 MHz,
DD
DQ
out
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
G
21.5
34.0
6.0
—
23.1
36.4
6.3
24.0
—
dB
%
ps
D
Drain Efficiency
η
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
PAR
ACPR
IRL
—
dB
dBc
dB
--35.5
-- 1 4
--32.5
-- 9
—
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 750 mA, P = 28 W Avg.,
DD
DQ
out
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
G
η
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
ps
D
Frequency
920 MHz
940 MHz
960 MHz
(dB)
23.1
23.1
22.8
(%)
36.4
36.4
36.6
6.3
6.2
6.1
--35.5
--36.1
--35.8
-- 1 4
-- 2 2
-- 1 7
Typical Performances (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 750 mA, 920--960 MHz Bandwidth
DD
DQ
P
@ 1 dB Compression Point, CW
P1dB
IMD
—
100
—
W
out
IMD Symmetry @ 82 W PEP, P where IMD Third Order
MHz
out
sym
—
20
—
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and
Lower Sidebands > 2 dB)
VBW Resonance Point
VBW
—
80
—
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 40 MHz Bandwidth @ P = 28 W Avg.
G
—
—
0.3
—
—
dB
out
F
Gain Variation over Temperature
∆G
0.02
dB/°C
(--30°C to +85°C)
Output Power Variation over Temperature
∆P1dB
—
0.004
—
dB/°C
(--30°C to +85°C)
Typical Broadband Performance — 880 MHz (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 750 mA, P = 28 W Avg.,
DD
DQ
out
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
G
η
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
ps
D
Frequency
(dB)
22.9
23.0
22.8
(%)
35.4
35.5
35.6
865 MHz
6.4
6.2
6.0
--34.7
--35.1
--35.7
-- 1 5
-- 2 3
-- 1 9
880 MHz
895 MHz
1. Part internally matched both on input and output.
MRF8S9102NR3
RF Device Data
Freescale Semiconductor
3
R1
R2
C12
C2
C9
C3
C4 C5
C10
R3
C8
C16
C15
C14
C11
C6 C7
C1
C13
MRF8S9102N
Rev. 0
Figure 1. MRF8S9102NR3 Test Circuit Component Layout
Table 6. MRF8S9102NR3 Test Circuit Component Designations and Values
Part
Description
220 μF, 63 V Electrolytic Capacitors
10 μF, 50 V Chip Capacitors
3.0 pF Chip Capacitors
Part Number
Manufacturer
Vishay
C1, C2
222212018221
C3, C4, C5, C6, C7
C5750X5R1H106M
ATC100B3R0BT500XT
ATC100B470JT500XT
ATC100B4R3BT500XT
ATC100B4R7BT500XT
WCR08051KFI
TDK
C8, C14, C15
ATC
C9, C12, C13, C16
47 pF Chip Capacitors
ATC
C10
C11
4.3 pF Chip Capacitor
ATC
4.7 pF Chip Capacitor
ATC
R1, R2
R3
1 KΩ, 1/8 W Chip Resistors
10 Ω, 1/4 W Chip Resistor
Welwyn
Yageo
Rogers
9C12063A10R0FKHFT
RO4350
PCB
0.020″, ε = 3.5
r
MRF8S9102NR3
RF Device Data
Freescale Semiconductor
4
TYPICAL CHARACTERISTICS
27
40
V
= 28 Vdc, P = 28 W (Avg.), I = 750 mA
out DQ
DD
26
25
24
23
38
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
36
34
η
D
G
ps
32
-- 3 6
--36.5
-- 3 7
--37.5
-- 3 8
--38.5
-- 0 . 5
-- 0 . 8
22
21
20
19
0
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
-- 5
-- 1 . 1
-- 1 . 4
-- 1 . 7
-- 2
-- 1 0
-- 1 5
-- 2 0
-- 2 5
PARC
ACPR
18
17
IRL
940
820
840
860
880
900
920
960
980
f, FREQUENCY (MHz)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 28 Watts Avg.
-- 10
V
= 28 Vdc, P = 82 W (PEP), I = 750 mA
out DQ
DD
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
-- 20
-- 30
-- 40
-- 50
-- 6 0
IM3--U
IM3--L
IM5--U
IM5--L
IM7--U
IM7--L
1
10
100
TWO--TONE SPACING (MHz)
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing
-- 2 0
24
23.5
23
2
1
60
V
= 28 Vdc, I = 750 mA, f = 940 MHz, Single--Carrier
DQ
DD
η
D
W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
50
-- 2 5
-- 3 0
-- 3 5
-- 4 0
-- 4 5
-- 5 0
ACPR
0
40
30
20
10
0
22.5
22
-- 1
G
ps
-- 1 d B = 2 5 W
-- 2
-- 3
-- 3 d B = 4 8 W
-- 2 d B = 3 5 W
30
21.5
21
PARC
50
-- 4
10
20
40
60
P
, OUTPUT POWER (WATTS)
out
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8S9102NR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
24
60
0
920 MHz
940 MHz
η
D
G
ps
23
22
21
20
19
18
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
50
40
30
20
10
0
960 MHz
V
= 28 Vdc, I = 750 mA, Single--Carrier
DQ
DD
W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
ACPR
960 MHz
940 MHz
920 MHz
920 MHz
940 MHz
960 MHz
1
10
, OUTPUT POWER (WATTS) AVG.
100
P
out
Figure 5. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
30
0
-- 4
25
20
15
Gain
-- 8
-- 1 2
-- 1 6
--20
-- 2 4
10
IRL
V
P
= 28 Vdc
= 0 dBm
= 750 mA
DD
5
0
in
I
DQ
600
700
800
900
1000 1100
1200 1300 1400
f, FREQUENCY (MHz)
Figure 6. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
10
0
-- 1 0
-- 2 0
-- 3 0
-- 4 0
3.84 MHz
Channel BW
1
Input Signal
0.1
0.01
-- 5 0
-- 6 0
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
0.001
-- 7 0
-- 8 0
0.0001
0
1
2
3
4
5
6
7
8
9
10
-- 9 0
PEAK--TO--AVERAGE (dB)
--100
Figure 7. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
-- 9 -- 7 . 2 -- 5 . 4 -- 3 . 6 -- 1 . 8
0
1.8 3.6
5.4 7.2
9
f, FREQUENCY (MHz)
Figure 8. Single--Carrier W--CDMA Spectrum
MRF8S9102NR3
RF Device Data
Freescale Semiconductor
6
V
= 28 Vdc, I = 750 mA, P = 28 W Avg.
DQ out
DD
f
Z
Z
load
source
MHz
820
840
860
880
900
920
940
960
980
Ω
Ω
1.93 -- j3.20
2.05 -- j3.14
2.13 -- j3.13
2.17 -- j3.14
2.21 -- j3.14
2.23 -- j3.19
2.20 -- j3.24
2.14 -- j3.27
2.04 -- j3.29
3.46 -- j1.73
3.48 -- j1.48
3.52 -- j1.26
3.58 -- j1.06
3.70 -- j0.87
3.86 -- j0.73
4.04 -- j0.63
4.26 -- j0.56
4.50 -- j0.56
Z
Z
=
=
Test circuit impedance as measured from
gate to ground.
source
Test circuit impedance as measured from
drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 9. Series Equivalent Source and Load Impedance
MRF8S9102NR3
RF Device Data
Freescale Semiconductor
7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
V
= 28 Vdc, I = 750 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
DD
DQ
57
56
55
54
53
52
51
50
49
48
Ideal
920 MHz
Actual
920 MHz
960 MHz
960 MHz
940 MHz
940 MHz
47
46
25
26 27
28 29
30 31
32
33 34
35 36
P , INPUT POWER (dBm)
in
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
Watts
P3dB
Watts
f
dBm
52.0
52.1
52.0
dBm
52.9
52.9
52.9
(MHz)
920
940
960
158
162
158
195
195
195
Test Impedances per Compression Level
f
Z
Z
load
source
(MHz)
Ω
Ω
920
940
960
P1dB
P1dB
P1dB
1.60 -- j2.77
2.03 -- j3.36
2.33 -- j3.55
8.80 -- j0.18
9.34 + j1.58
8.42 + j3.05
Figure 10. Pulsed CW Output Power
versus Input Power @ 28 V
MRF8S9102NR3
RF Device Data
Freescale Semiconductor
8
R1
R2
C13
C2
C9
C3
C4 C5
C10
R3
C8
C17
C14
C15
C16
C11
C6 C7
C1
C12
MRF8S9102N
Rev. 0
Figure 11. MRF8S9102NR3 Test Circuit Component Layout — 865--895 MHz
Table 7. MRF8S9102NR3 Test Circuit Component Designations and Values — 865--895 MHz
Part
Description
220 μF, 63 V Electrolytic Capacitors
10 μF, 50 V Chip Capacitors
2.7 pF Chip Capacitor
Part Number
Manufacturer
Vishay
C1, C2
222212018221
C3, C4, C5, C6, C7
C5750X5R1H106M
ATC100B2R7BT500XT
ATC100B470JT500XT
ATC100B6R8BT500XT
ATC100B3R9BT500XT
ATC100B1R2BT500XT
WCR08051KFI
TDK
C8
ATC
C9, C12, C13, C16
C10, C11
C14, C15
C17
47 pF Chip Capacitors
ATC
6.8 pF Chip Capacitors
ATC
3.9 pF Chip Capacitors
ATC
1.2 pF Chip Capacitor
ATC
R1, R2
1 KΩ, 1/8 W Chip Resistors
10 Ω, 1/4 W Chip Resistor
Welwyn
Yageo
Rogers
R3
9C12063A10R0FKHFT
RO4350
PCB
0.020″, ε = 3.5
r
MRF8S9102NR3
RF Device Data
Freescale Semiconductor
9
TYPICAL CHARACTERISTICS — 865--895 MHz
27
40
V
= 28 Vdc, P = 28 W (Avg.), I = 750 mA
out DQ
DD
38
26
25
24
23
22
21
20
Single--Carrier W--CDMA
36
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
34
η
D
32
G
ps
0
0
-- 3 1
-- 3 2
-- 3 3
-- 5
-- 1 0
-- 0 . 5
-- 1
PARC
IRL
-- 3 4
-- 3 5
-- 3 6
-- 1 5
-- 2 0
-- 2 5
-- 1 . 5
-- 2
19
18
17
ACPR
-- 2 . 5
820
840
860
880
900
920
940
960
980
f, FREQUENCY (MHz)
Figure 12. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 28 Watts Avg.
24
23
22
21
20
19
18
60
0
η
G
D
ps
865 MHz
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 6 0
895 MHz
50
40
30
880 MHz
V
= 28 Vdc, I = 750 mA, Single--Carrier
DD
DQ
W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
ACPR
895 MHz
895 MHz
20
10
0
880 MHz
865 MHz
865 MHz
880 MHz
1
10
100
P
, OUTPUT POWER (WATTS) AVG.
out
Figure 13. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
30
25
20
15
0
-- 4
Gain
-- 8
-- 1 2
-- 1 6
IRL
10
5
V
P
= 28 Vdc
= 0 dBm
= 750 mA
DD
-- 2 0
-- 2 4
in
I
DQ
0
700
750
800
850
900
950
1000 1050 1100
f, FREQUENCY (MHz)
Figure 14. Broadband Frequency Response
MRF8S9102NR3
RF Device Data
Freescale Semiconductor
10
V
= 28 Vdc, I = 750 mA, P = 28 W Avg.
DQ out
DD
f
Z
Z
load
source
MHz
820
840
860
880
900
920
940
960
980
Ω
Ω
0.95 -- j1.97
1.02 -- j1.88
1.09 -- j1.83
1.10 -- j1.74
1.13 -- j1.74
1.18 -- j1.71
1.12 -- j1.75
1.06 -- j1.72
1.02 -- j1.71
3.44 -- j2.01
3.44 -- j1.87
3.48 -- j1.73
3.53 -- j1.60
3.63 -- j1.65
3.73 -- j1.51
3.81 -- j1.55
3.88 -- j1.60
3.98 -- j1.71
Z
Z
=
=
Test circuit impedance as measured from
gate to ground.
source
Test circuit impedance as measured from
drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 15. Series Equivalent Source and Load Impedance — 865--895 MHz
MRF8S9102NR3
RF Device Data
Freescale Semiconductor
11
PACKAGE DIMENSIONS
MRF8S9102NR3
RF Device Data
Freescale Semiconductor
12
MRF8S9102NR3
RF Device Data
Freescale Semiconductor
13
MRF8S9102NR3
RF Device Data
Freescale Semiconductor
14
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
•
•
•
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
•
•
•
Electromigration MTTF Calculator
RF High Power Model
.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Feb. 2011
• Initial Release of Data Sheet
MRF8S9102NR3
RF Device Data
Freescale Semiconductor
15
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
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Document Number: MRF8S9102N
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