SQ4050EY [FREESCALE]
Automotive N-Channel 40 V (D-S) 175 °C MOSFET; 汽车N沟道40 V （D -S ）， 175 ℃的MOSFET
| 型号： | SQ4050EY |
| 厂家： | 
Freescale |
| 描述： | Automotive N-Channel 40 V (D-S) 175 °C MOSFET |
| 文件： | 总6页 (文件大小：482K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SQ4050EY
Automotive N-Channel
40 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® Power MOSFET
PRODUCT SUMMARY
VDS (V)
40
• AEC-Q101 Qualified
R
DS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
D (A)
Configuration
0.0080
0.0110
19
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
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I
Single
D
SO-8
D
S
1
2
3
4
8
7
6
5
D
D
D
S
S
G
G
S
Top View
N-Channel MOSFET
ORDERING INFORMATION
Package
SO-8
SQ4050EY-T1-GE3
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
40
V
Gate-Source Voltage
VGS
20
TC = 25 °C
19
Continuous Drain Current
ID
TC = 125 °C
11
Continuous Source Current (Diode Conduction)
Pulsed Drain Currenta
IS
5.5
A
IDM
IAS
EAS
75
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
34
L = 0.1 mH
TC = 25 °C
58
mJ
W
6
Maximum Power Dissipationa
PD
T
C = 125 °C
2
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
85
UNIT
Junction-to-Ambient
PCB Mountb
°C/W
Junction-to-Foot (Drain)
RthJF
25
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
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1 / 6
SQ4050EY
Automotive N-Channel
40 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
40
1.5
-
-
2.0
-
-
V
2.5
VDS = 0 V, VGS
VGS = 0 V
GS = 0 V
=
20 V
100
1
nA
μA
A
VDS = 40 V
-
-
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
V
VDS = 40 V, TJ = 125 °C
VDS = 40 V, TJ = 175 °C
VDS5 V
-
-
50
150
-
VGS = 0 V
VGS = 10 V
VGS = 10 V
VGS = 10 V
-
-
ID(on)
30
-
-
ID = 10 A
0.0063 0.0080
ID = 10 A, TC = 125 °C
ID = 10 A, TC = 175 °C
ID = 9 A
-
-
-
0.0120
0.0150
Drain-Source On-State Resistancea
RDS(on)
V
GS = 10 V
-
V
GS = 4.5 V
-
0.0090 0.0110
Forward Transconductanceb
Dynamicb
gfs
VDS = 15 V, ID = 10 A
-
51
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
-
-
1925
300
120
34
2406
375
150
51
-
VGS = 0 V
VDS = 20 V, f = 1 MHz
pF
-
-
Qgs
Qgd
Rg
VGS = 10 V
VDS = 20 V, ID = 14 A
f = 1 MHz
-
6.1
nC
-
5.6
-
0.2
-
0.47
16
1
td(on)
tr
td(off)
tf
24
14
50
14.5
-
9.3
VDD = 20 V, RL = 20
ID 1 A, VGEN = 10 V, Rg = 6
ns
-
33.5
9.6
-
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
-
-
-
75
A
V
Forward Voltage
VSD
IF = 3.5 A, VGS = 0
0.75
1.1
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2 / 6
SQ4050EY
Automotive N-Channel
40 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
50
40
30
20
10
0
50
40
30
20
10
0
VGS = 10 V thru 4 V
TC = 25 °C
VGS = 3 V
TC = 125 °C
TC = - 55 °C
0
1
2
3
4
5
0
2
4
6
8
10
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
0.025
0.020
0.015
0.010
0.005
0.000
100
80
60
40
20
0
TC = - 55 °C
TC = 25 °C
VGS= 4.5 V
VGS = 10 V
TC = 125 °C
0
10
20
30
40
50
0
5
10
15
20
25
ID - Drain Current (A)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Transconductance
10
8
3000
2500
2000
1500
1000
500
ID = 14 A
Ciss
6
4
2
Coss
Crss
0
0
0
5
10
15
20
25
30
35
40
0
10
20
30
40
Qg - Total Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
Gate Charge
Capacitance
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SQ4050EY
Automotive N-Channel
40 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
10
2.5
2.1
1.7
1.3
0.9
0.5
ID = 14 A
TJ = 150 °C
1
VGS = 10 V
0.1
VGS = 4.5 V
TJ = 25 °C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
- 50 - 25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
0.5
0.2
0.10
0.08
0.06
0.04
0.02
0.00
- 0.1
- 0.4
- 0.7
- 1.0
ID = 5 mA
ID = 250 μA
TJ = 25 °C
TJ = 150 °C
- 50 - 25
0
25
50
75 100 125 150 175
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
52
ID = 1 mA
50
48
46
44
42
40
- 50 - 25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
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SQ4050EY
Automotive N-Channel
40 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
100 μs
IDM Limited
10
1 ms
10 ms
1
Limited by RDS(on)
*
100 ms
1 s
10 s, DC
0.1
BVDSS Limited
TC = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
1
10
Note
•
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
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5 / 6
SQ4050EY
Automotive N-Channel
40 V (D-S) 175 °C MOSFET
Disclaimer
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相关型号：
SQ4284EY-T1_GE3
Small Signal Field-Effect Transistor, 8A I(D), 40V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
VISHAY
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