SQD23N06-31L [FREESCALE]
Automotive N-Channel 60 V (D-S) 175 °C MOSFET; 汽车N沟道60 V （D -S ）， 175 ℃的MOSFET
| 型号： | SQD23N06-31L |
| 厂家： | 
Freescale |
| 描述： | Automotive N-Channel 60 V (D-S) 175 °C MOSFET |
| 文件： | 总9页 (文件大小：817K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SQD23N06-31L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
FEATURES
60
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
R
DS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
D (A)
0.031
0.045
23
I
• 100 % Rg and UIS Tested
Configuration
Single
• Compliant to RoHS Directive 2002/95/EC
• AEC-Q101 Qualifiedd
D
TO-252
G
Drain Connected to Tab
S
G
D
S
N-Channel MOSFET
Top View
ORDERING INFORMATION
Package
TO-252
SQD23N06-31L-GE3
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
20
TC = 25 °C
23
Continuous Drain Current
ID
TC = 125 °C
13
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
IS
30
A
IDM
IAS
EAS
90
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
20
L = 0.1 mH
TC = 25 °C
20
mJ
W
37
12
Maximum Power Dissipationb
PD
T
C = 125 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
50
UNIT
Junction-to-Ambient
PCB Mountc
°C/W
Junction-to-Case (Drain)
RthJC
4
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
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SQD23N06-31L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
60
1.5
-
-
-
V
2.0
2.5
VDS = 0 V, VGS
VGS = 0 V
GS = 0 V
=
20 V
-
100
1.0
nA
μA
A
VDS = 60 V
-
-
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
V
VDS = 60 V, TJ = 125 °C
VDS = 60 V, TJ = 175 °C
VDS5 V
-
-
50
VGS = 0 V
VGS = 10 V
VGS = 10 V
VGS = 10 V
-
-
250
-
ID(on)
30
-
-
ID = 15 A
0.024
0.031
0.055
0.070
0.045
-
ID = 15 A, TJ = 125 °C
ID = 15 A, TJ = 175 °C
ID = 10 A
-
-
-
Drain-Source On-State Resistancea
RDS(on)
V
GS = 10 V
-
V
GS = 4.5 V
-
-
Forward Transconductanceb
Dynamicb
gfs
VDS = 15 V, ID = 15 A
-
25
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
-
-
674
144
55
16
4
845
180
70
24
-
VGS = 0 V
VDS = 25 V, f = 1 MHz
pF
-
-
Qgs
Qgd
Rg
VGS = 10 V
VDS = 30 V, ID = 23 A
f = 1 MHz
-
nC
-
3
-
1.1
-
2.2
6
3.3
9
td(on)
tr
td(off)
tf
-
8
12
21
5
VDD = 30 V, RL = 1.3
ID 23 A, VGEN = 10 V, Rg = 1
ns
-
14
3
-
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
-
-
-
90
A
V
Forward Voltage
VSD
IF = 15 A, VGS = 0 V
0.9
1.5
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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SQD23N06-31L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
50
40
30
20
10
0
10
8
V
= 10 V thru 6 V
GS
V
= 5 V
GS
6
4
V
= 4 V
GS
T
= 25 °C
C
2
T
= 125 °C
C
V
= 3 V
8
GS
T
= - 55 °C
6
C
0
0
2
4
6
10
0
2
4
8
10
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
0.15
0.12
0.09
0.06
0.03
0
40
32
24
16
8
T
= - 55 °C
T
= 25 °C
C
C
V
= 4.5 V
GS
T
= 125 °C
C
V
= 10 V
GS
0
0
10
20
30
40
50
0
5
10
15
20
25
I
- Drain Current (A)
ID - Drain Current (A)
D
Transconductance
On-Resistance vs. Drain Current
1000
800
600
400
200
0
10
8
I
= 23 A
D
C
iss
V
= 30 V
DS
6
4
C
oss
2
C
rss
0
0
10
20
30
40
50
60
0
2
4
6
8
10 12 14 16 18 20
Qg - Total Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
Capacitance
Gate Charge
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SQD23N06-31L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.5
2.1
1.7
1.3
0.9
0.5
100
I
= 15 A
D
10
V
= 10 V
GS
T
= 150 °C
J
1
T
= 25 °C
J
0.1
0.01
0.001
- 50 - 25
0
25
50
75 100 125 150 175
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.6
0.3
0
0.25
0.20
0.15
0.10
0.05
0
- 0.3
I
= 5 mA
D
- 0.6
- 0.9
- 1.2
T
= 150 °C
J
I
= 250 μA
D
T
= 25 °C
8
J
- 50 - 25
0
25
50
75 100 125 150 175
0
2
4
6
10
TJ - Temperature (°C)
VGS - Gate-to-Source Voltage (V)
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
80
ID = 1 mA
76
72
68
64
60
- 50 - 25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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SQD23N06-31L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
I
Limited
DM
100
10
Limited by
DS(on)*
R
100 µs
1 ms
1
10 ms
100 ms, 1 s, 10 s, DC
0.1
T
= 25 °C
C
Single Pulse
BVDSS Limited
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V at which R is specified
DS(on)
GS
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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SQD23N06-31L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
10
-3
10
-2
10
-1
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
•
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
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SQD23N06-31L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
MIN.
INCHES
MAX.
C1
b2
DIM.
A
MAX.
2.38
1.14
0.127
0.88
1.14
5.44
0.58
0.58
6.22
4.45
6.73
5.50
MIN.
0.087
0.035
0.001
0.028
0.030
0.206
0.018
0.018
0.235
0.161
0.255
0.177
2.21
0.89
0.030
0.71
0.76
5.23
0.46
0.46
5.97
4.10
6.48
4.49
0.094
0.045
0.005
0.035
0.045
0.214
0.023
0.023
0.245
0.175
0.265
0.217
A1
A2
b
b1
b2
C
C1
D
D1
E
b
C
b1
E1
e
e
A2
2.28 BSC
4.57 BSC
9.65
0.090 BSC
0.180 BSC
0.380
e1
A1
e1
H
10.41
1.78
1.02
1.27
1.52
0.410
0.070
0.040
0.050
0.060
L
1.40
0.64
0.89
1.15
0.055
0.025
0.035
0.040
L1
L2
L3
ECN: T11-0110-Rev. L, 18-Apr-11
DWG: 5347
E1
Note
Dimension L3 is for reference only.
•
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SQD23N06-31L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
(5.690)
0.180
(4.572)
0.055
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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SQD23N06-31L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively,
“freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vi shay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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requirements that are often placed on freestyle products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsib ility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All
operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify freestyle’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, freestyle products are not designed for use in medical, life-saving, or life-sustaining
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damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vis hay
Material Category Policy
freestyle Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwis e specified as non-compliant.
Please note that some freestyle documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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