SQD25N15-52
更新时间：2024-10-29 12:33:14
品牌：FREESCALE
描述：Automotive N-Channel 150 V (D-S) 175 °C MOSFET
概述
数据手册SQD25N15-52 概述
Automotive N-Channel 150 V (D-S) 175 °C MOSFET 汽车N沟道150 V（D -S ）， 175 ℃的MOSFET
SQD25N15-52 数据手册
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PDF下载SQD25N15-52
Automotive N-Channel
150 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
150
0.052
25
FEATURES
RDS(on) () at VGS = 10 V
• TrenchFET® Power MOSFET
• Package with Low Thermal Resistance
• 100 % Rg and UIS Tested
• AEC-Q101 Qualified
ID (A)
Configuration
Single
D
TO-252
• Material categorization:
For definitions of compliance please see
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G
Drain Connected to Tab
G
D
S
Top View
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-252
SQD25N15-52-GE3
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
150
V
VGS
20
TC = 25 °C
25
Continuous Drain Current
ID
T
C = 125 °C
16
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
IS
50
A
IDM
IAS
EAS
63
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
30
L = 0.1 mH
TC = 25 °C
45
107
mJ
W
Maximum Power Dissipationb
PD
T
C = 125 °C
35
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
50
UNIT
Junction-to-Ambient
PCB Mountc
°C/W
Junction-to-Case (Drain)
RthJC
1.4
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
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1 / 9
SQD25N15-52
Automotive N-Channel
150 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
150
-
-
V
2.5
-
3
4
VDS = 0 V, VGS
=
20 V
-
100
1
nA
μA
A
VGS = 0 V
VGS = 0 V
VGS = 0 V
VGS = 10 V
VGS = 10 V
VGS = 10 V
VDS = 150 V
VDS = 150 V, TJ = 125 °C
VDS = 150 V, TJ = 175 °C
VDS5 V
-
-
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
RDS(on)
gfs
-
-
50
-
-
250
-
30
-
-
ID = 15 A
0.038
0.052
0.104
0.136
-
Drain-Source On-State Resistancea
ID = 15 A, TJ = 125 °C
ID = 15 A, TJ = 175 °C
-
-
-
V
GS = 10 V
-
Forward Transconductanceb
Dynamicb
VDS = 15 V, ID = 15 A
-
33
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
1
-
-
-
-
1760
215
80
2200
270
100
51
-
VGS = 0 V
VDS = 25 V, f = 1 MHz
pF
34
Qgs
Qgd
Rg
VGS = 10 V
VDS = 75 V, ID = 25 A
f = 1 MHz
14.5
5.4
1.8
11
nC
-
2.6
17
17
30
9
td(on)
tr
td(off)
tf
11
VDD = 75 V, RL = 3
ID 25 A, VGEN = 10 V, Rg = 1
ns
20
6
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
-
-
-
63
A
V
Forward Voltage
VSD
IF = 20 A, VGS = 0 V
0.87
1.5
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2 / 9
SQD25N15-52
Automotive N-Channel
150 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
45
36
27
18
9
50
40
30
20
10
0
VGS = 10 V thru 7 V
VGS = 6 V
TC = 25 °C
TC = 125 °C
VGS = 5 V
TC = - 55 °C
0
0
2
4
6
8
10
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
60
48
36
24
12
0
5
TC = - 55 °C
4
3
2
1
0
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
TC = - 55 °C
6.0 7.5
0
5
10
15
20
25
0.0
1.5
3.0
4.5
ID - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
Transconductance
Transfer Characteristics
0.15
0.12
0.09
0.06
0.03
0.00
3000
2400
1800
1200
600
Ciss
VGS = 10 V
Crss
Coss
0
0
10
20
30
40
50
0
20
40
60
80
100
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Drain Current
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3 / 9
SQD25N15-52
Automotive N-Channel
150 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10
3.0
2.5
2.0
1.5
1.0
0.5
ID = 5 A
ID = 25 A
VDS = 75 V
8
6
VGS = 10 V
4
2
0
0
5
10
15
20
25
30
35
40
- 50 - 25
0
25
50
75 100 125 150 175
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
10
0.25
0.20
0.15
0.10
0.05
0.00
TJ = 150 °C
1
TJ = 150 °C
0.1
TJ = 25 °C
0.01
TJ = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
190
180
170
160
150
140
1.0
0.4
ID = 10 mA
- 0.2
- 0.8
- 1.4
- 2.0
ID = 5 mA
ID = 250 μA
- 50 - 25
0
25
50
75 100 125 150 175
- 50 - 25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
TJ - Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Threshold Voltage
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4 / 9
SQD25N15-52
Automotive N-Channel
150 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
100
10
Limited by RDS(on)
*
100 μs
1 ms
10 ms
1
100 ms, 1 s, 10 s, DC
TC = 25 °C
Single Pulse
0.1
BVDSS Limited
0.01
0.01
0.1
1
10
100
1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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5 / 9
SQD25N15-52
Automotive N-Channel
150 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
10
100
Note
•
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to- Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
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6 / 9
SQD25N15-52
Automotive N-Channel
150 V (D-S) 175 °C MOSFET
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
MIN.
INCHES
MAX.
C1
b2
DIM.
A
MAX.
2.38
1.14
0.127
0.88
1.14
5.44
0.58
0.58
6.22
4.45
6.73
5.50
MIN.
0.087
0.035
0.001
0.028
0.030
0.206
0.018
0.018
0.235
0.161
0.255
0.177
2.21
0.89
0.030
0.71
0.76
5.23
0.46
0.46
5.97
4.10
6.48
4.49
0.094
0.045
0.005
0.035
0.045
0.214
0.023
0.023
0.245
0.175
0.265
0.217
A1
A2
b
b1
b2
C
C1
D
D1
E
b
C
b1
E1
e
e
A2
2.28 BSC
4.57 BSC
9.65
0.090 BSC
0.180 BSC
0.380
e1
A1
e1
H
10.41
1.78
1.02
1.27
1.52
0.410
0.070
0.040
0.050
0.060
L
1.40
0.64
0.89
1.15
0.055
0.025
0.035
0.040
L1
L2
L3
ECN: T11-0110-Rev. L, 18-Apr-11
DWG: 5347
E1
Note
Dimension L3 is for reference only.
•
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7 / 9
SQD25N15-52
Automotive N-Channel
150 V (D-S) 175 °C MOSFET
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
(5.690)
0.180
(4.572)
0.055
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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8 / 9
SQD25N15-52
Automotive N-Channel
150 V (D-S) 175 °C MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively,
“freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vi shay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain type s of applications are based on freestyle’s knowledge of typical
requirements that are often placed on freestyle products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsib ility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All
operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify freestyle’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, freestyle products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the freestyle product could result in personal injury or death.
Customers using or selling freestyle products not expressly indicated for use in such applications do so at their own risk and agr ee
to fully indemnify and hold freestyle and its distributors harmless from and against an y and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vis hay
Material Category Policy
freestyle Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwis e specified as non-compliant.
Please note that some freestyle documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002 /95/EC conform to Directive 2011/65/EU.
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9 / 9
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