SQD30N05-20L [FREESCALE]
Automotive N-Channel 55 V (D-S) 175 °C MOSFET; 汽车N沟道55 V （D -S ）， 175 ℃的MOSFET
| 型号： | SQD30N05-20L |
| 厂家： | 
Freescale |
| 描述： | Automotive N-Channel 55 V (D-S) 175 °C MOSFET |
| 文件： | 总9页 (文件大小：743K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SQD30N05-20L
Automotive N-Channel
55 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
55
R
DS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
D (A)
0.020
0.026
30
FEATURES
I
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
Configuration
Single
D
• 100 % Rg and UIS Tested
TO-252
• Material categorization:
For definitions of compliance please see
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G
Drain Connected to Tab
S
G
D
S
Top View
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-252
SQD30N05-20L-GE3
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
55
UNIT
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
TC = 25 °Ca
TC = 125 °C
30
ID
Continuous Drain Current
19
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
IS
A
30
IDM
IAS
120
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
20
L = 0.1 mH
EAS
20
mJ
W
TC = 25 °C
50
16
Maximum Power Dissipationb
PD
TC = 125 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
60
UNIT
PCB Mountc
Junction-to-Ambient
°C/W
RthJC
Junction-to-Case (Drain)
3
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
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1 / 9
SQD30N05-20L
Automotive N-Channel
55 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
VDS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
55
1.5
-
-
-
V
2
2.5
VDS = 0 V, VGS
=
20 V
-
100
1
nA
μA
A
VGS = 0 V
VGS = 0 V
GS = 0 V
VDS = 55 V
VDS = 55 V, TJ = 125 °C
VDS = 55 V, TJ = 175 °C
VDS5 V
-
-
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
-
-
50
V
-
-
250
-
ID(on)
VGS = 5 V
30
-
-
0.016
-
VGS = 10 V
ID = 20 A
0.020
0.035
0.043
0.026
-
V
GS = 10 V
VGS = 10 V
GS = 4.5 V
ID = 20 A, TJ = 125 °C
ID = 20 A, TJ = 175 °C
ID = 15 A
-
Drain-Source On-State Resistancea
RDS(on)
-
-
V
-
0.021
34
Forward Transconductanceb
Dynamicb
gfs
VDS = 15 V, ID = 20 A
-
S
Ciss
Coss
Crss
Qg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
-
938
203
86
1175
255
110
18
-
VGS = 0 V
VGS = 5 V
VDS = 25 V, f = 1 MHz
-
pF
-
-
12
Qgs
Qgd
Rg
VDS = 25 V, ID = 35 A
f = 1 MHz
-
4.1
4.8
2.89
7
nC
-
-
1.40
4.50
11
15
27
8
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
td(on)
tr
td(off)
tf
-
-
-
-
10
VDD = 25 V, RL = 0.71
ID 35 A, VGEN = 10 V, Rg = 1
ns
18
5
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
-
-
-
120
1.5
A
V
VSD
IF = 80 A, VGS = 0 V
Forward Voltage
1.2
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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SQD30N05-20L
Automotive N-Channel
55 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
40
32
24
16
8
40
32
24
16
8
VGS = 10 V thru 4 V
T
= 25 °C
C
VGS = 3 V
T
C
= 125 °C
T
C
= - 55 °C
4
0
0
0
2
4
6
8
10
0
1
2
3
5
VDS - Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
50
40
30
20
10
0
0.10
0.08
0.06
0.04
0.02
0.00
T
= - 55 °C
C
T
C
= 25 °C
T
= 125 °C
C
VGS = 4.5 V
VGS = 10 V
0
8
16
24
32
40
0
5
10
15
20
25
ID - Drain Current (A)
I
- Drain Current (A)
D
Transconductance
On-Resistance vs. Drain Current
2.5
2.1
1.7
1.3
0.9
0.5
100
10
1
I
= 20 A
D
V
= 10 V
GS
T
J
= 150 °C
T
J
= 25 °C
0.1
0.01
0.001
- 50 - 25
0
25
50
75 100 125 150 175
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
T
J
- Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
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SQD30N05-20L
Automotive N-Channel
55 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1500
1200
900
600
300
0
6
5
4
3
2
1
0
ID = 35 A
VDS = 25 V
Ciss
Coss
Crss
0
5
10 15 20 25 30 35 40 45 50 55
0
3
6
9
12
15
Qg - Total Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
Capacitance
Gate Charge
0.20
0.16
0.12
0.08
0.04
0.00
0.6
0.3
0
- 0.3
- 0.6
- 0.9
- 1.2
I
= 5 mA
D
I
= 250 µA
D
T
J
= 150 °C
T
J
= 25 °C
6
0
2
4
8
10
- 50 - 25
0
25
50
75 100 125 150 175
T
J
- Temperature (°C)
V
- Gate-to-Source Voltage (V)
GS
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
70
I
= 1 mA
D
67
64
61
58
55
- 50 - 25
0
25
50
75 100 125 150 175
T
J
- Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
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SQD30N05-20L
Automotive N-Channel
55 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
100
ID Limited
100 μs
1 ms
10
10 ms
1
100 ms
10 s, 1 s, DC
Limited by RDS(on)
*
BVDSS Limited
TC = 25 °C
Single Pulse
0.1
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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SQD30N05-20L
Automotive N-Channel
55 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.05
0.02
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
•
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
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SQD30N05-20L
Automotive N-Channel
55 V (D-S) 175 °C MOSFET
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
MIN.
INCHES
MAX.
C1
b2
DIM.
A
MAX.
2.38
1.14
0.127
0.88
1.14
5.44
0.58
0.58
6.22
4.45
6.73
5.50
MIN.
0.087
0.035
0.001
0.028
0.030
0.206
0.018
0.018
0.235
0.161
0.255
0.177
2.21
0.89
0.030
0.71
0.76
5.23
0.46
0.46
5.97
4.10
6.48
4.49
0.094
0.045
0.005
0.035
0.045
0.214
0.023
0.023
0.245
0.175
0.265
0.217
A1
A2
b
b1
b2
C
C1
D
D1
E
b
C
b1
E1
e
e
A2
2.28 BSC
4.57 BSC
9.65
0.090 BSC
0.180 BSC
0.380
e1
A1
e1
H
10.41
1.78
1.02
1.27
1.52
0.410
0.070
0.040
0.050
0.060
L
1.40
0.64
0.89
1.15
0.055
0.025
0.035
0.040
L1
L2
L3
ECN: T11-0110-Rev. L, 18-Apr-11
DWG: 5347
E1
Note
Dimension L3 is for reference only.
•
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SQD30N05-20L
Automotive N-Channel
55 V (D-S) 175 °C MOSFET
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
(5.690)
0.180
(4.572)
0.055
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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SQD30N05-20L
Automotive N-Channel
55 V (D-S) 175 °C MOSFET
Disclaimer
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