SQD50N02-04L [FREESCALE]
Automotive N-Channel 20 V (D-S) 175 °C MOSFET; 汽车N沟道20 V (D -S ), 175 ℃的MOSFET型号: | SQD50N02-04L |
厂家: | Freescale |
描述: | Automotive N-Channel 20 V (D-S) 175 °C MOSFET |
文件: | 总9页 (文件大小:717K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SQD50N02-04L
Automotive N-Channel
20 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
20
0.0043
0.006
50
R
DS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
D (A)
FEATURES
• TrenchFET® Power MOSFET
• Package with Low Thermal Resistance
• AEC-Q101 Qualifiedd
I
Configuration
Single
D
• 100 % Rg and UIS Tested
TO-252
• Material categorization:
For definitions of compliance please see
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G
Drain Connected to Tab
G
D
S
S
Top View
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-252
SQD50N02-04L-GE3
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
20
V
VGS
20
TC = 25 °C
50
Continuous Drain Currenta
ID
T
C = 125 °C
50
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
IS
50
A
IDM
IAS
EAS
200
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
36
L = 0.1 mH
TC = 25 °C
65
136
mJ
W
Maximum Power Dissipationb
PD
T
C = 125 °C
45
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
50
UNIT
Junction-to-Ambient
PCB Mountc
°C/W
Junction-to-Case (Drain)
RthJC
1.1
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
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SQD50N02-04L
Automotive N-Channel
20 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
20
1.5
-
-
2.0
-
-
V
2.5
VDS = 0 V, VGS
=
20 V
100
1
nA
μA
A
VGS = 0 V
VGS = 0 V
GS = 0 V
VDS = 20 V
VDS = 20 V, TJ = 125 °C
VDS = 20 V, TJ = 175 °C
VDS5 V
-
-
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
-
-
50
250
-
V
-
-
ID(on)
VGS = 10 V
VGS = 10 V
50
-
-
ID = 20 A
0.0033 0.0043
V
GS = 10 V
VGS = 10 V
GS = 4.5 V
ID = 20 A, TJ = 125 °C
ID = 20 A, TJ = 125 °C
ID = 20 A
-
-
-
0.0063
0.0073
Drain-Source On-State Resistancea
RDS(on)
-
V
-
0.0045 0.0060
Forward Transconductanceb
Dynamicb
gfs
VDS = 15 V, ID = 20 A
-
80
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
-
-
5000
1437
731
79
6250
1800
915
119
-
VGS = 0 V
VDS = 10 V, f = 1 MHz
pF
-
-
Qgs
Qgd
Rg
VGS = 10 V
VDS = 10 V, ID = 50 A
f = 1 MHz
-
11.5
14.1
1.7
13
nC
-
-
0.8
-
2.6
20
td(on)
tr
td(off)
tf
-
10
15
VDD = 10 V, RL = 0.2
ID 50 A, VGEN = 10 V, Rg = 1
ns
-
41
62
-
9
14
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
-
-
-
200
1.5
A
V
Forward Voltage
VSD
IF = 50 A, VGS = 0 V
0.92
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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SQD50N02-04L
Automotive N-Channel
20 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
175
150
125
100
75
120
90
60
30
0
VGS = 10 V thru 5 V
VGS = 4 V
TC = 25 °C
50
25
VGS = 3 V
12
TC = - 55 °C
TC = 125 °C
0
0
3
6
9
15
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
150
120
90
60
30
0
1.5
1.2
0.9
0.6
0.3
0
T
= 25 °C
C
T
= - 55 °C
C
T
= 25 °C
C
T
= 125 °C
C
T
= 125 °C
1
C
T
= - 55 °C
C
0
12
24
I - Drain Current (A)
D
36
48
60
0
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Transconductance
0.015
0.012
0.009
0.006
0.003
8000
7000
6000
5000
4000
3000
2000
1000
0
C
iss
V
= 4.5 V
= 10 V
GS
C
oss
V
GS
C
rss
0
0
20
40
60
80
100
0
5
10
15
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
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SQD50N02-04L
Automotive N-Channel
20 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 50 A
D
I
= 20 A
D
8
V
= 10 V
GS
V
= 10 V
DS
6
4
2
0
0
20
40
60
80
100
- 50 - 25
0
25
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
50
75 100 125 150 175
Qg - Total Gate Charge (nC)
Gate Charge
100
10
0.05
0.04
0.03
0.02
0.01
0
T
= 150 °C
J
1
T
= 25 °C
J
0.1
0.01
0.001
T
= 150 °C
J
T
= 25 °C
J
0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
0.1
31
I
= 10 mA
D
30
29
28
27
26
25
- 0.3
- 0.7
- 1.1
- 1.5
I
= 5 mA
D
I
= 250 μA
D
- 50 - 25
0
25
50
75 100 125 150 175
- 50 - 25
0
25
50
75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
T - Junction Temperature (°C)
J
Drain Source Breakdown vs. Junction Temperature
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SQD50N02-04L
Automotive N-Channel
20 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
I
Limited
DM
100
10
Limited by
DS(on)*
R
1 ms
10 ms
I
D
Limited
100 ms, 1 s, 10 s, DC
1
0.1
T
= 25 °C
C
Single Pulse
BVDSS Limited
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V at which R is specified
DS(on)
GS
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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SQD50N02-04L
Automotive N-Channel
20 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
•
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
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SQD50N02-04L
Automotive N-Channel
20 V (D-S) 175 °C MOSFET
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
MIN.
INCHES
MAX.
C1
b2
DIM.
A
MAX.
2.38
1.14
0.127
0.88
1.14
5.44
0.58
0.58
6.22
4.45
6.73
5.50
MIN.
0.087
0.035
0.001
0.028
0.030
0.206
0.018
0.018
0.235
0.161
0.255
0.177
2.21
0.89
0.030
0.71
0.76
5.23
0.46
0.46
5.97
4.10
6.48
4.49
0.094
0.045
0.005
0.035
0.045
0.214
0.023
0.023
0.245
0.175
0.265
0.217
A1
A2
b
b1
b2
C
C1
D
D1
E
b
C
b1
E1
e
e
A2
2.28 BSC
4.57 BSC
9.65
0.090 BSC
0.180 BSC
0.380
e1
A1
e1
H
10.41
1.78
1.02
1.27
1.52
0.410
0.070
0.040
0.050
0.060
L
1.40
0.64
0.89
1.15
0.055
0.025
0.035
0.040
L1
L2
L3
ECN: T11-0110-Rev. L, 18-Apr-11
DWG: 5347
E1
Note
Dimension L3 is for reference only.
•
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SQD50N02-04L
Automotive N-Channel
20 V (D-S) 175 °C MOSFET
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
(5.690)
0.180
(4.572)
0.055
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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SQD50N02-04L
Automotive N-Channel
20 V (D-S) 175 °C MOSFET
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l,
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operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Material Category Policy
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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