SUD45P03-09 [FREESCALE]
P-Channel 30 V (D-S) MOSFET; P沟道30 V (D -S )的MOSFET型号: | SUD45P03-09 |
厂家: | Freescale |
描述: | P-Channel 30 V (D-S) MOSFET |
文件: | 总8页 (文件大小:464K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SUD45P03-09
P-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
Definition
VDS (V)
RDS(on) (Ω)
ID (A)
Qg (Typ.)
- 45d
- 32
0.0087 at VGS = - 10 V
0.0150 at VGS = - 4.5 V
•
•
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
- 30
60
APPLICATIONS
•
•
•
Power Switch
Load Switch in High Current Applications
DC/DC Converters
TO-252
S
G
Drain Connected to Tab
G
D
S
D
Top View
Ordering Information: SUD45P03-09-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
C
Parameter
Symbol
Limit
- 30
20
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
- 45d
T
C = 25 °C
Continuous Drain Current (TJ = 150 °C)
ID
TC = 70 °C
- 42.5
- 100
- 35
A
IDM
IAS
Pulsed Drain Current
Avalanche Current
Single Avalanche Energya
EAS
L = 0.1 mH
TC = 25 °C
61
mJ
W
41.7b
2.1
Maximum Power Dissipationa
PD
TA = 25 °Cc
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Symbol
Limit
60
Unit
RthJA
°C/W
RthJC
Junction-to-Case (Drain)
3
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
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SUD45P03-09
P-Channel 30 V (D-S) MOSFET
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VGS(th)
IGSS
VDS = 0 V, ID = - 250 µA
VDS = VGS, ID = - 250 µA
Drain-Source Breakdown Voltage
- 30
- 1
V
Gate Threshold Voltage
Gate-Body Leakage
- 2.5
250
1
VDS = 0 V, VGS
=
20 V
nA
VDS = - 30 V, VGS = 0 V
IDSS
V
DS = - 30 V, VGS = 0 V, TJ = 125 °C
Zero Gate Voltage Drain Current
50
µA
VDS = - 30 V, VGS = 0 V, TJ = 150 °C
VDS ≤ - 10 V, VGS = - 10 V
250
On-State Drain Currenta
ID(on)
RDS(on)
gfs
- 50
A
Ω
S
VGS = - 10 V, ID = - 20 A
0.0072
0.0125
45
0.0087
0.0150
Drain-Source On-State Resistancea
Forward Transconductancea
V
GS = - 4.5 V, ID = - 15 A
VDS = - 15 V, ID = - 20 A
Dynamicb
Ciss
Coss
Crss
Qg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
2700
515
445
60
VGS = 0 V, VDS = - 15 V, f = 1 MHz
pF
90
Qgs
Qgd
Rg
VDS = - 15 V, VGS = - 10 V, ID = - 20 A
f = 1 MHz
9.3
15
nC
0.5
2.5
12
5
Ω
td(on)
tr
td(off)
tf
20
20
60
20
11
V
DD = - 15 V, RL = 1.5 Ω
ns
Turn-Off Delay Timec
Fall Timec
ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω
40
12
Drain-Source Body Diode Ratings and Characteristics TC = 25 °Cb
IS
ISM
Continuous Current
- 45
- 100
- 1.5
40
A
Pulsed Current
Forward Voltagea
VSD
trr
IF = - 10 A, VGS = 0 V
- 0.8
27
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IRM(REC)
Qrr
IF = - 10 A, dI/dt = 100 A/µs
1.3
20
2
30
nC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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SUD45P03-09
P-Channel 30 V (D-S) MOSFET
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
80
60
40
20
0
0.020
0.015
0.010
0.005
0.000
V
GS
= 10 V thru 5 V
V
= 4.5 V
GS
V
GS
= 4 V
V
= 10 V
GS
V
GS
= 3 V
0.0
0.5
1.0
1.5
2.0
2.5
0
20
40
60
80
100
I
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
D
Output Characteristics
On-Resistance vs. Drain Current
5
4
3
2
1
0
0.05
0.04
0.03
0.02
0.01
0.00
T
= 25 °C
C
T
= 150 °C
J
T
C
= 125 °C
2
T
J
= 25 °C
T
C
= - 55 °C
0
1
3
4
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Transfer Characteristics
10
8
75
60
45
30
15
0
I
= 20 A
D
T
C
= - 55 °C
V
DS
= 15 V
T
C
= 25 °C
6
T
C
= 125 °C
V
= 8 V
DS
V
DS
= 24 V
4
2
0
0
20
40
60
80
0
10
20
30
40
50
I
- Drain Current (A)
Q
g
- Total Gate Charge (nC)
D
Gate Charge
Transconductance
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SUD45P03-09
P-Channel 30 V (D-S) MOSFET
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
- 1.0
- 1.3
- 1.6
- 1.9
- 2.2
100
T
= 150 °C
J
10
I
= 250 µA
D
T
J
= 25 °C
1
0.1
0.0
- 50 - 25
0
25
50
75
100 125 150
0.3
0.6
0.9
1.2
V
SD
- Source-to-Drain Voltage (V)
T
J
- Temperature (°C)
Source-Drain Diode Forward Voltage
Threshold Voltage
4000
3000
2000
1000
0
- 33
- 34
- 35
- 36
- 37
I
= 250 µA
D
C
iss
C
oss
C
rss
0
5
10
15
20
25
30
- 50 - 25
0
T
25
50
75
100 125 150
V
DS
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
J
Capacitance
Drain Source Breakdown vs. Junction Temperature
60
1.8
1.5
1.2
0.9
0.6
I
= 20 A
D
V
= 10 V
GS
45
30
15
0
Package Limited
V
= 4.5 V
GS
0
25
50
75
100
125
150
- 50 - 25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
T
C
- Case Temperature (°C)
On-Resistance vs. Junction Temperature
Current Derating
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SUD45P03-09
P-Channel 30 V (D-S) MOSFET
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1000
100
10
100
Limited by R
*
DS(on)
100 µA
T = 25 °C
J
T = 150 °C
J
1 ms
10
10 ms, 100 ms
1 s, 10 s, DC
1
T
= 25 °C
0.1
A
Single Pulse
BVDSS
Limited
0.01
1
-5
-4
-3
-2
-1
0.1
1
10
100
1
10
10
10
10
Time (s)
10
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Single Pulse Avalanche Current Capability vs. Time
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
10
30
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SUD45P03-09
P-Channel 30 V (D-S) MOSFET
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
MIN.
INCHES
MAX.
C1
b2
DIM.
A
MAX.
2.38
1.14
0.127
0.88
1.14
5.44
0.58
0.58
6.22
4.45
6.73
5.50
MIN.
0.087
0.035
0.001
0.028
0.030
0.206
0.018
0.018
0.235
0.161
0.255
0.177
2.21
0.89
0.030
0.71
0.76
5.23
0.46
0.46
5.97
4.10
6.48
4.49
0.094
0.045
0.005
0.035
0.045
0.214
0.023
0.023
0.245
0.175
0.265
0.217
A1
A2
b
b1
b2
C
C1
D
D1
E
b
C
b1
E1
e
e
A2
2.28 BSC
4.57 BSC
9.65
0.090 BSC
0.180 BSC
0.380
e1
A1
e1
H
10.41
1.78
1.02
1.27
1.52
0.410
0.070
0.040
0.050
0.060
L
1.40
0.64
0.89
1.15
0.055
0.025
0.035
0.040
L1
L2
L3
ECN: T11-0110-Rev. L, 18-Apr-11
DWG: 5347
E1
Note
Dimension L3 is for reference only.
•
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SUD45P03-09
P-Channel 30 V (D-S) MOSFET
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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SUD45P03-09
P-Channel 30 V (D-S) MOSFET
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