SUD50N025-09BP [FREESCALE]
N-Channel 25-V (D-S) MOSFET; N通道25 -V （D -S ）的MOSFET
| 型号： | SUD50N025-09BP |
| 厂家： | 
Freescale |
| 描述： | N-Channel 25-V (D-S) MOSFET |
| 文件： | 总7页 (文件大小：339K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUD50N025-09BP
N-Channel 25-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D 100% Rg Tested
VDS (V)
rDS(on) (W)
ID (A)a, e
Qg (Typ)
D RoHS Compliant
APPLICATIONS
RoHS
0.0086 @ V = 10 V
62
52
GS
25
18.5 nC
COMPLIANT
0.012 @ V = 4.5 V
GS
D DC/DC Conversion, High-Side
– Desktop PC
TO-252
D
G
Drain Connected to Tab
G
D
S
Top View
Ordering Information: SUD50N025-09BP—E3 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
25
V
"20
e
T
T
= 25_C
= 70_C
= 25_C
= 70_C
62
C
e
51
C
Continuous Drain Current (T = 175_C)
I
J
D
b, c
26
T
A
b, c
22
T
A
A
Pulsed Drain Current
I
100
37
DM
T
C
= 25_C
= 25_C
Continuous Source-Drain Diode Current
I
S
b, c
6.7
T
A
Avalanche Current Pulse
I
AS
28
39.2
55
L = 0.1 mH
Single Pulse Avalanche Energy
E
AS
mJ
W
T
T
= 25_C
= 70_C
= 25_C
= 70_C
C
39
C
Maximum Power Dissipation
P
D
b, c
10
T
A
b, c
7
T
A
Operating Junction and Storage Temperature Range
T , T
–55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
b, d
Maximum Junction-to-Ambient
R
thJA
12
15
t p 10 sec
_C/W
Maximum Junction-to-Case
Steady State
R
thJC
2.2
2.7
Notes:
a. Based on T = 25_C.
C
b. Surface mounted on 1” x 1” FR4 board.
c. t = 10 sec
d. Maximum under steady state conditions is 50 _C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 50 A.
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SUD50N025-09BP
N-Channel 25-V (D-S) MOSFET
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I = 250 mA
25
V
D
V
V
Temperature Coefficient
DV /T
J
20
DS
DS
I
D
= 250 mA
mV/C
Temperature Coefficient
DV
GS(th)
/T
J
– 6.3
GS(th)
V
= V , I = 250 mA
GS D
Gate-Source Threshold Voltage
Gate-Source Leakage
V
1.2
2.4
"100
1
V
DS
GS(th)
I
V
DS
= 0 V, V = "20 V
nA
GSS
GS
V
= 25 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 25 V, V = 0 V, T = 55_C
10
GS
J
a
On-State Drain Current
I
100
A
V
DS
w 5 V, V = 10 V
D(on)
GS
0.007
0.0086
0.012
V
= 10 V, I = 26 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 22 A
0.0096
46
GS
D
a
Forward Transconductance
g
fs
V
= 15 V, I = 26 A
S
DS
D
Dynamicb
Input Capacitance
C
iss
2020
pF
Output Capacitance
C
V
= 12 V, V = 0 V, f = 1 MHz
485
245
38
18.5
7
oss
DS
GS
Reverse Transfer Capacitance
C
rss
V
DS
= 12 V, V = 10 V, I = 26 A
57
28
GS
D
Total Gate Charge
Q
g
nC
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
Q
V
DS
= 12 V, V = 4.5 V, I = 26 A
GS D
gs
6.5
0.9
9
gd
R
f = 1 MHz
1.4
14
12
30
12
26
23
26
12
W
g
t
t
t
t
d(on)
t
r
8
V
DD
= 12 V, R = 0.54 W
L
I
D
^ 22 A, V = 10 V, R = 1 W
GEN g
Turn-Off Delay Time
Fall Time
20
8
d(off)
t
f
ns
Turn-On Delay Time
Rise Time
17
15
17
8
d(on)
t
r
V
DD
= 12 V, R = 0.54 W
L
I
^ 22 A, V = 4.5 V, R = 1 W
GEN g
D
Turn-Off Delay Time
Fall Time
d(off)
t
f
Drain-Source Body Diode Characteristics
T
= 25_C
Continuous Source-Drain Diode Current
I
37
100
1.5
40
C
S
A
a
Pulse Diode Forward Current
I
SM
I
S
= 6.7 A
Body Diode Voltage
V
SD
0.9
26
16
12
14
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
t
rr
ns
nC
Q
24
rr
I
F
= 6.7 A, di/dt = 100 A/ms, T = 25C
J
t
a
ns
t
b
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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SUD50N025-09BP
N-Channel 25-V (D-S) MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
100
80
60
40
20
0
20
16
12
8
V
GS
= 10 V thru 5 V
T
C
= –55_C
4 V
T
C
= 25_C
T
C
=125_C
4
3 V
2.5
0
1.0
0.0
0.5
1.0
1.5
2.0
3.0
1.5
2.0
2.5
3.0
3.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
3000
2500
2000
1500
1000
500
0.0200
0.0175
0.0150
0.0125
0.0100
0.0075
0.0050
C
iss
V
GS
= 4.5 V
C
oss
V
GS
= 10 V
60
C
rss
0
0
20
40
80
100
0
5
10
15
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
D
= 20 A
I
D
= 26 A
V
DS
= 12 V
V
GS
= 4.5 V, 10 V
6
V
DS
= 18 V
4
2
0
0
10
20
30
40
–50 –25
0
25
50
75 100 125 150 175
Q
g
(nC)
T – Junction Temperature
J
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SUD50N025-09BP
N-Channel 25-V (D-S) MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
r
vs V vs. Temperature
DS(on) GS
100
10
1
0.024
0.018
0.012
I
D
= 20 A
T
J
= 150_C
T
= 125_C
A
T
J
= 25_C
0.006
0.000
T
= 25_C
A
0
2
4
6
8
10
0.3
0.6
0.9
1.2
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
720
600
I
D
= 250 mA
480
360
240
120
T
A
= 25_C
0
–50 –25
0
25
50
75 100 125 150 175
0.001
0.01
0.1
1
10
100
1000
T
J
– Temperature (_C)
Time (sec)
Safe Operating Area
1000
100
*Limited by r
DS(on)
1 ms
10
1
10 ms
100 ms
1
10
DC
0.10
0.01
0.001
T
= 25_C
A
Single Pulse
0.1
1
10
100
V
DS
(V)
*V u minimum V at which r
is specified
GS
GS
DS(on)
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SUD50N025-09BP
N-Channel 25-V (D-S) MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Current De-Rating
Power De-Rating
16
12
8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T
C
– Case Temperature (_C)
T
C
– Case Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 70_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
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SUD50N025-09BP
N-Channel 25-V (D-S) MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
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SUD50N025-09BP
N-Channel 25-V (D-S) MOSFET
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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