SUD50N03-06P [FREESCALE]
N-Channel 30 V (D-S) 175 °C MOSFET; N沟道30 V （D -S ）， 175 ℃的MOSFET
| 型号： | SUD50N03-06P |
| 厂家： | 
Freescale |
| 描述： | N-Channel 30 V (D-S) 175 °C MOSFET |
| 文件： | 总5页 (文件大小：389K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUD50N03-06P
N-Channel
30 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D 175 _C Junction Temperature
D Optimized for Low-Side Synchronous Rectifier
Operation
VDS (V)
rDS(on) (W)
ID (A)b
*
b
0.0065 at V = 10 V
84
GS
D 100 % Rg Tested
APPLICATIONS
30
0.0095 at V = 4.5 V
GS
59b
D DC/DC Converters
D Synchronous Rectifiers
TO-252
D
Drain Connected to Tab
G
G
D
S
Top View
S
Ordering Information:
SUD50N03-06P
SUD50N03-06P–E3 (Lead (Pb)–free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25 _C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
DS
V
V
GS
"20
b
T
= 25 _C
= 100 _C
84
C
a
Continuous Drain Current
I
D
b
T
59
C
Pulsed Drain Current
I
100
25
A
DM
a
Continuous Source Current (Diode Conduction)
Single Pulse Avalanche Current
Avalanche Energy
I
S
I
45
AS
L = 0.1 mH
E
101.25
88
mJ
AS
T
= 25 _C
= 25 _C
C
Maximum Power Dissipation
P
W
D
a
T
8.3
A
Operating Junction and Storage Temperature Range
T , T
–55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
15
40
18
50
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
Steady State
_C/W
Maximum Junction-to-Case
1.4
1.7
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Based on maximum allowable Junction Temperature, package limitation current is 50 A.
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.freescale.net.cn
1 / 5
SUD50N03-06P
N-Channel
30 V (D-S) 175 °C MOSFET
SPECIFICATIONS (T = 25 _C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
V
= 0 V, I = 250 mA
D
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
30
GS
(BR)DSS
V
V
V
DS
= V , I = 250 mA
1.0
3.0
" 100
1
GS(th)
GS
D
I
V
DS
= 0 V, V = " 20 V
nA
GSS
GS
V
= 30 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 30 V, V = 0 V, T = 125 _C
50
DS
GS
J
b
On-State Drain Current
I
V
= 5 V, V = 10 V
50
20
A
D(on)
DS
GS
V
= 10 V, I = 20 A
0.0053
0.0078
0.0065
0.0105
0.0095
GS
D
b
V
= 10 V, I = 20 A, T = 125 _C
Drain-Source On-State Resistance
r
W
GS
D
J
DS(on)
V
= 4.5 V, I = 20 A
D
GS
b
Forward Transconductance
g
fs
V
= 15 V, I = 20 A
S
DS
D
Dynamica
Input Capacitance
C
C
3100
565
255
1.9
21
iss
V
GS
= 0 V, V = 25 V, f = 1 MHz
DS
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
pF
W
oss
C
rss
R
1
3.1
30
g
g
c
Total Gate Charge
Q
c
Gate-Source Charge
Q
Q
10
V
= 15 V, V = 4.5 V, I = 50 A
nC
gs
gd
DS
GS
D
c
Gate-Drain Charge
7.5
12
c
Turn-On Delay Time
t
20
20
45
15
d(on)
c
Rise Time
t
12
r
V
DD
= 15 V, R = 0.3 W
L
ns
c
I
D
^ 50 A, V = 10 V, R = 2.5 W
GEN g
Turn-Off Delay Time
t
30
d(off)
c
Fall Time
t
10
f
Source-Drain Diode Ratings and Characteristic (TC = 25 _C)
Pulsed Current
I
100
1.5
70
A
V
SM
b
Diode Forward Voltage
V
SD
I
F
= 100 A, V = 0 V
1.2
35
GS
Source-Drain Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/ms
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2 %.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
200
100
80
60
40
20
0
V
GS
= 10 thru 6 V
5 V
160
120
80
4 V
3 V
T
= 125 _C
C
40
25 _C
–55 _C
0
0
2
4
6
8
10
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
www.freescale.net.cn
2 / 5
SUD50N03-06P
N-Channel
30 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Transconductance
On-Resistance vs. Drain Current
120
0.0150
T
= –55 _C
25 _C
C
100
80
60
40
20
0
0.0125
0.0100
V
GS
= 4.5 V
125 _C
0.0075
0.0050
0.0025
0.0000
V
GS
= 10 V
0
10
20
30
40
50
0
20
40
60
80
100
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Capacitance
Gate Charge
10
8
4000
3500
3000
2500
2000
1500
1000
500
C
iss
V
D
= 15 V
DS
= 50 A
I
6
4
C
oss
2
C
rss
0
0
0
5
10
15
20
25
30
0
10
20
30
40
50
V
DS
– Drain-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.0
1.5
1.0
0.5
0.0
100
10
1
V
= 10 V
GS
= 20 A
I
D
T = 150 _C
J
T = 25 _C
J
–50 –25
0
25
50
75 100 125 150 175
0
0.3
V
0.6
0.9
1.2
1.5
T
– Junction Temperature (_C)
– Source-to-Drain Voltage (V)
J
SD
www.freescale.net.cn
3 / 5
SUD50N03-06P
N-Channel
30 V (D-S) 175 °C MOSFET
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
Safe Operating Area
1000
30
24
18
12
6
Limited
DS(on)
by r
10, 100 ms
100
10
1 ms
10 ms
100 ms
1
1 s
10 s
T
= 25 _C
100 s
dc
A
0.1
Single Pulse
0
0.01
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
T
A
– Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
Square Wave Pulse Duration (sec)
1
10
100
www.freescale.net.cn
4 / 5
SUD50N03-06P
N-Channel
30 V (D-S) 175 °C MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively,
“freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vi shay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain type s of applications are based on freestyle’s knowledge of typical
requirements that are often placed on freestyle products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsib ility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All
operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify freestyle’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, freestyle products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the freestyle product could result in personal injury or death.
Customers using or selling freestyle products not expressly indicated for use in such applications do so at their own risk and agr ee
to fully indemnify and hold freestyle and its distributors harmless from and against an y and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vis hay
Material Category Policy
freestyle Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwis e specified as non-compliant.
Please note that some freestyle documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002 /95/EC conform to Directive 2011/65/EU.
www.freescale.net.cn
5 / 5
相关型号：
SUD50N03-07-T4
Power Field-Effect Transistor, 20A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
VISHAY
SUD50N03-09P-T4E3
TRANSISTOR 50 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, 3 PIN, FET General Purpose Power
VISHAY
©2020 ICPDF网 联系我们和版权申明