SUD50P10-43L [FREESCALE]
P-Channel 100 V (D-S) 175 °C MOSFET; P沟道100伏（D -S ）， 175 ℃的MOSFET
| 型号： | SUD50P10-43L |
| 厂家： | 
Freescale |
| 描述： | P-Channel 100 V (D-S) 175 °C MOSFET |
| 文件： | 总9页 (文件大小：817K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUD50P10-43L
P-Channel
100 V (D-S) 175 °C MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFET
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a
- 37
•
Compliant to RoHS Directive 2002/95/EC
RoHS
0.043 at VGS = - 10 V
0.048 at VGS = - 4.5 V
COMPLIANT
- 100
54 nC
- 35
TO-252
S
G
Drain Connected to Tab
G
D
S
Top View
Ordering Information: SUD50P10-43L-E3 (Lead (Pb)-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
- 100
20
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
- 37.1a
- 31a
- 9.2b, c
TC = 25 °C
T
C = 125 °C
TA = 25 °C
TA = 125 °C
Continuous Drain Current (TJ = 175 °C)b
ID
- 7.7b, c
A
IDM
IS
Pulsed Drain Current
- 40
- 50a
TC = 25 °C
TA = 25 °C
Continuous Source Current (Diode Conduction)
- 6.9b, c
- 35
61
IAS
Avalanche Current
L = 0.1 mH
TC = 25 °C
EAS
Single Pulse Avalanche Energy
mJ
W
136
95
TC = 70 °C
PD
Maximum Power Dissipation
8.3b, c
5.8b, c
TA = 25 °C
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
Typical
Maximum
Unit
t ≤ 10 s
Steady State
15
40
18
50
Junction-to-Ambienta
°C/W
RthJC
Junction-to-Case (Drain)
0.85
1.1
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 40 °C/W.
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SUD50P10-43L
P-Channel
100 V (D-S) 175 °C MOSFET
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
- 100
V
V
DS Temperature Coefficient
- 109
5.9
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS = VGS, ID = - 250 µA
- 1
- 3
100
- 1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = - 100 V, VGS = 0 V
VDS = - 100 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = - 10 V
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
- 10
- 40
VGS = - 10 V, ID = - 9.2 A
0.036
0.040
38
0.043
0.048
Drain-Source On-State Resistancea
Forward Transconductancea
Ω
S
VGS = - 4.5 V, ID = - 7.7 A
VDS = - 15 V, ID = - 9.2 A
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
4600
230
175
106
54
VDS = - 50 V, VGS = 0 V, f = 1 MHz
pF
VDS = - 50 V, VGS = - 10 V, ID = - 9.2 A
160
81
Qg
Total Gate Charge
nC
Ω
Qgs
Qgd
Rg
Gate-Source Charge
V
DS = - 50 V, VGS = - 4.5 V, ID = - 9.2 A
f = 1 MHz
14
Gate-Drain Charge
26
Gate Resistance
4
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
15
25
30
Rise Time
20
VDD = - 50 V, RL = 6.5 Ω
ID ≅ - 7.7 A, VGEN = - 10 V, Rg = 1 Ω
ns
Turn-Off Delay Time
110
100
42
165
150
65
Fall Time
Turn-On Delay Time
Rise Time
160
100
100
240
150
150
V
DD = - 50 V, RL = 6.5 Ω
ns
A
ID ≅ - 7.7 A, VGEN = - 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
IS
ISM
VSD
trr
TC = 25 °C
IS = - 7.7 A
- 50
- 40
- 1.2
90
- 0.8
60
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
150
46
225
IF = - 7.7 A, dI/dt = 100 A/µs, TJ = 25 °C
ns
tb
14
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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SUD50P10-43L
P-Channel
100 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
35
30
25
20
15
10
5
20
16
12
8
V
= 10 V thru 4 V
GS
T
= 125 °C
A
3 V
2 V
4
25 °C
2.0
- 55 °C
3.0
0
0.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.5
1.0
1.5
2.5
3.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.044
0.042
0.040
0.038
0.036
0.034
7000
6000
5000
4000
3000
2000
1000
0
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
5
10
15
20
25
30
35
0
10
20
30
40
50
60
70
80
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
8
2.3
2.0
1.7
1.4
1.1
0.8
0.5
I
D
= 9.2 A
I
D
= 9.2 A
V
DS
= 50 V
V
GS
= 10 V, 4.5 V
6
V
DS
= 80 V
4
2
0
0
20
Q
40
60
80
100
120
- 50 - 25
0
25
50
75
100 125 150
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
g
Gate Charge
On-Resistance vs. Junction Temperature
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SUD50P10-43L
P-Channel
100 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
0.08
0.07
T
A
= 125 °C
T
J
= 150 °C
0.06
0.05
0.04
0.03
0.02
10
T
A
= 25 °C
T
= 25 °C
J
1
0.0
2
3
4
5
6
7
8
9
10
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
35
30
25
20
15
10
I
D
= 250 µA
5
0
- 50 - 25
0
25
50
75 100 125 150 175
0.01
0.1
1
10
100
1000
T
J
- Temperature (°C)
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
100 µs
Limited by R
*
DS(on)
10
1 ms
10 ms
1
100 ms
1 s
0.1
0.01
10 s
DC
T
= 25 °C
A
Single Pulse
BVDSS Limited
0.001
0.1
1
10
100
1000
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R
is specified
GS
GS
DS(on)
Safe Operating Area, Junction-to-Ambient
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SUD50P10-43L
P-Channel
100 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
40
30
20
10
0
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
25
50
75
T - Case Temperature (°C)
C
100
125
150
175
T
C
- Case Temperature (°C)
Current Derating*
Single Pulse Power, Junction-to-Ambient
100
10
L
I
A
T
A
BV - V
DD
1
0.000001
0.00001
0.0001
0.001
0.01
T
A
- Time In Avalanche (s)
Single Pulse Avalance Capability
* The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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SUD50P10-43L
P-Channel
100 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
0.02
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 65 °C/W
thJA
(t)
3. T - T = P
Z
JM DM thJA
A
Single Pulse
4. Surface Mounted
0.01
-2
-1
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
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SUD50P10-43L
P-Channel
100 V (D-S) 175 °C MOSFET
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
MIN.
INCHES
MAX.
C1
b2
DIM.
A
MAX.
2.38
1.14
0.127
0.88
1.14
5.44
0.58
0.58
6.22
4.45
6.73
5.50
MIN.
0.087
0.035
0.001
0.028
0.030
0.206
0.018
0.018
0.235
0.161
0.255
0.177
2.21
0.89
0.030
0.71
0.76
5.23
0.46
0.46
5.97
4.10
6.48
4.49
0.094
0.045
0.005
0.035
0.045
0.214
0.023
0.023
0.245
0.175
0.265
0.217
A1
A2
b
b1
b2
C
C1
D
D1
E
b
C
b1
E1
e
e
A2
2.28 BSC
4.57 BSC
9.65
0.090 BSC
0.180 BSC
0.380
e1
A1
e1
H
10.41
1.78
1.02
1.27
1.52
0.410
0.070
0.040
0.050
0.060
L
1.40
0.64
0.89
1.15
0.055
0.025
0.035
0.040
L1
L2
L3
ECN: T11-0110-Rev. L, 18-Apr-11
DWG: 5347
E1
Note
Dimension L3 is for reference only.
•
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SUD50P10-43L
P-Channel
100 V (D-S) 175 °C MOSFET
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
(5.690)
0.180
(4.572)
0.055
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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SUD50P10-43L
P-Channel
100 V (D-S) 175 °C MOSFET
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“freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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freestyle Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the
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