SUD70N02-03P [FREESCALE]
N-Channel 20 V (D-S) 175 °C MOSFET; N沟道20 V （D -S ）， 175 ℃的MOSFET
| 型号： | SUD70N02-03P |
| 厂家： | 
Freescale |
| 描述： | N-Channel 20 V (D-S) 175 °C MOSFET |
| 文件： | 总5页 (文件大小：481K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUD70N02-03P
N-Channel
20 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized for High-Efficiency
D 100% Rg Tested
VDS (V)
rDS(on) (W)
ID (A)a
0.0033 @ V = 10 V
39
31
GS
20
APPLICATIONS
0.0053 @ V = 4.5 V
GS
D Synchronous Buck Converter
- Low-Side
- Secondary Synchronous Rectifier
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
S
N-Channel MOSFET
Ordering Information: SUD70N02-03P
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
20
DS
GS
V
V
"20
a
T
= 25_C
39
A
a
Continuous Drain Current
I
D
b
T = 25_C
70
C
A
Pulsed Drain Current
I
100
37
DM
a
Continuous Source Current (Diode Conduction)
I
S
a
T
= 25_C
= 25_C
8.3
A
Maximum Power Dissipation
P
D
W
T
100
C
Operating Junction and Storage Temperature Range
T , T
-55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
15
40
18
50
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
Steady State
_C/W
Maximum Junction-to-Case
1.2
1.5
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package
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SUD70N02-03P
N-Channel
20 V (D-S) 175 °C MOSFET
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
V
= 0 V, I = 250 mA
D
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
20
GS
(BR)DSS
V
V
V
DS
= V , I = 250 mA
0.8
3.0
"100
1
GS(th)
GS
D
V
DS
= 0 V, V = "20 V
GS
I
nA
GSS
V
= 16 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 16 V, V = 0 V, T = 125_C
50
DS
GS
J
b
On-State Drain Current
I
V
= 5 V, V = 10 V
50
15
A
D(on)
DS
GS
V
= 10 V, I = 20 A
0.0026
0.0042
0.0033
0.0047
0.0053
GS
D
b
V
= 10 V, I = 20 A, T = 125_C
Drain-Source On-State Resistance
r
W
GS
D
J
DS(on)
V
= 4.5 V, I = 20 A
D
GS
b
Forward Transconductance
g
fs
V
= 15 V, I = 20 A
S
DS
D
Dynamica
Input Capacitance
C
C
5100
1650
800
1.1
40
iss
V
GS
= 0 V, V = 10 V, f = 1 MHz
DS
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
pF
W
oss
C
rss
f = 1.0 MHz
R
0.5
1.8
60
g
g
c
Total Gate Charge
Q
c
Gate-Source Charge
Q
Q
14
V
D
= 10 V, V = 4.5 V, I = 50 A
nC
gs
gd
DS
GS
D
c
Gate-Drain Charge
13
c
Turn-On Delay Time
t
15
25
20
70
25
d(on)
c
Rise Time
t
11
r
V
DD
= 10 V, R = 0.2 W
L
ns
c
I
^ 50 A, V
= 10 V, R = 2.5 W
Turn-Off Delay Time
t
45
GEN G
d(off)
c
Fall Time
t
15
f
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
I
100
1.5
90
A
V
SM
b
Diode Forward Voltage
V
SD
I
F
= 50 A, V = 0 V
1.2
45
GS
Source-Drain Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/ms
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
160
160
140
120
100
80
V
GS
= 10 thru 5 V
4 V
140
120
100
80
60
60
T
= 125_C
C
40
40
3 V
25_C
20
20
-55_C
0
0
0
2
4
6
8
10
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
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SUD70N02-03P
N-Channel
20 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
On-Resistance vs. Drain Current
200
0.006
T
= -55_C
C
0.005
160
120
80
40
0
V
= 4.5 V
= 10 V
GS
25_C
0.004
0.003
0.002
0.001
0.000
125_C
V
GS
0
10
20
D
30
40
50
60
0
20
40
60
80
100
I
- Drain Current (A)
I
D
- Drain Current (A)
Capacitance
Gate Charge
7000
6000
5000
4000
3000
2000
1000
0
10
8
V
I
= 10 V
DS
D
C
iss
= 50 A
6
4
C
oss
C
rss
2
0
0
4
8
12
16
20
0
10
20
30
40
50
60
70
80
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
100
10
1
V
GS
= 10 V
I
D
= 20 A
T = 150_C
J
T = 25_C
J
-50 -25
0
25
50
75 100 125 150 175
0
0.3
V
0.6
0.9
1.2
1.5
T
- Junction Temperature (_C)
- Source-to-Drain Voltage (V)
J
SD
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SUD70N02-03P
N-Channel
20 V (D-S) 175 °C MOSFET
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
Safe Operating Area
1000
40
32
24
16
8
Limited
DS(on)
by r
10, 100 ms
100
10
1 ms
10 ms
100 ms
1 s
10 s
100 s
dc
1
T
= 25_C
A
0.1
Single Pulse
0
0.01
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
T
A
- Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
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SUD70N02-03P
N-Channel
20 V (D-S) 175 °C MOSFET
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