SUD70N03-06P [FREESCALE]
N-Channel 30 V (D-S) 175 °C MOSFET; N沟道30 V （D -S ）， 175 ℃的MOSFET
| 型号： | SUD70N03-06P |
| 厂家： | 
Freescale |
| 描述： | N-Channel 30 V (D-S) 175 °C MOSFET |
| 文件： | 总5页 (文件大小：247K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUD70N03-06P
N-Channel
30 V (D-S) 175 ??C MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D High Current
VDS (V)
rDS(on) (W)
ID (A)b
D 100% Rg Tested
APPLICATIONS
0.006 @ V = 10 V
70
70
GS
30
0.009 @ V = 4.5 V
GS
D DC/DC Converters
− Optimized For Low Side
D Synchronous Rectifiers
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
S
Ordering Information: SUD70N03-06P
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
"20
70
DS
GS
V
V
T
= 25_C
= 100_C
C
a
Continuous Drain Current
I
D
b
T
70
C
Pulsed Drain Current
I
100
27
A
DM
a
Continuous Source Current (Diode Conduction)
Avalanche Current, single pulse
I
S
I
45
AS
L = 0.1 mH
Avalanche Energy, single pulse
E
101
88
mJ
AS
T
= 25_C
= 25_C
C
Maximum Power Dissipation
P
W
D
a
T
8.3
A
Operating Junction and Storage Temperature Range
T , T
−55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
15
40
18
50
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
Steady State
_C/W
Maximum Junction-to-Case
1.4
1.7
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package.
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SUD70N03-06P
N-Channel
30 V (D-S) 175 ??C MOSFET
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
V
= 0 V, I = 250 mA
D
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
30
GS
(BR)DSS
V
V
V
DS
= V , I = 250 mA
1.0
3.0
"100
1
GS(th)
GS
D
V
DS
= 0 V, V = "20 V
GS
I
nA
GSS
V
= 30 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 30 V, V = 0 V, T = 125_C
50
DS
GS
J
b
On-State Drain Current
I
V
= 5 V, V = 10 V
50
20
A
D(on)
DS
GS
V
= 10 V, I = 20 A
0.0046
0.0072
0.006
0.0105
0.009
GS
D
b
V
= 10 V, I = 20 A, T = 125_C
Drain-Source On-State Resistance
r
W
GS
D
J
DS(on)
V
= 4.5 V, I = 20 A
D
GS
b
Forward Transconductance
g
fs
V
= 15 V, I = 20 A
S
DS
D
Dynamica
Input Capacitance
C
C
3100
565
255
21
iss
V
GS
= 0 V, V = 25 V, f = 1 MHz
DS
Output Capacitance
pF
oss
Reverse Transfer Capacitance
C
rss
c
Total Gate Charge
Q
30
g
c
Gate-Source Charge
Q
Q
10
V
= 15 V, V = 4.5 V, I = 50 A
nC
gs
gd
DS
GS
D
c
Gate-Drain Charge
7.5
2.0
12
f = 1 MHz
Gate Resistance
R
0.9
3.4
20
20
45
15
W
g
c
Turn-On Delay Time
t
d(on)
c
Rise Time
t
12
r
V
= 15 V, R = 0.3 W
L
GEN g
DD
ns
c
I
D
^ 50 A, V
= 10 V, R = 2.5 W
Turn-Off Delay Time
t
30
d(off)
c
Fall Time
t
10
f
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
I
100
1.5
70
A
V
SM
b
Diode Forward Voltage
V
SD
I
F
= 100 A, V = 0 V
1.2
35
GS
Source-Drain Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/ms
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
200
100
80
60
40
20
0
V
GS
= 10 thru 6 V
5 V
160
120
80
40
0
4 V
3 V
T
= 125_C
C
25_C
−55_C
0
2
4
6
8
10
0
1
2
3
4
5
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
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SUD70N03-06P
N-Channel
30 V (D-S) 175 ??C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
On-Resistance vs. Drain Current
120
0.015
T
= −55_C
25_C
C
100
80
60
40
20
0
0.012
0.009
V
= 4.5 V
= 10 V
GS
125_C
0.006
0.003
0.000
V
GS
0
10
20
30
40
50
0
20
40
60
80
100
I
D
− Drain Current (A)
I
D
− Drain Current (A)
Capacitance
Gate Charge
10
8
4000
3500
3000
2500
2000
1500
1000
500
C
iss
V
D
= 15 V
DS
I
= 50 A
6
4
C
oss
2
C
rss
0
0
0
5
10
15
20
25
30
0
10
20
Q − Total Gate Charge (nC)
g
30
40
50
V
DS
− Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.0
1.5
1.0
0.5
0.0
100
10
1
V
GS
= 10 V
I
D
= 20 A
T = 150_C
J
T = 25_C
J
−50 −25
0
25
50
75 100 125 150 175
0
0.3
V
0.6
0.9
1.2
1.5
T
− Junction Temperature (_C)
− Source-to-Drain Voltage (V)
J
SD
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SUD70N03-06P
N-Channel
30 V (D-S) 175 ??C MOSFET
THERMAL RATINGS
Maximum Avalanche Drain Current vs.
Ambient Temperature
Safe Operating Area
1000
30
25
20
15
10
5
Limited
DS(on)
by r
10, 100 ms
100
10
1 ms
10 ms
100 ms
1
1 s
10 s
T
= 25_C
100 s
dc
A
0.1
Single Pulse
0
0.01
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
− Drain-to-Source Voltage (V)
T
A
− Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
Square Wave Pulse Duration (sec)
1
10
100
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SUD70N03-06P
N-Channel
30 V (D-S) 175 ??C MOSFET
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