ABS208 [FS]

Bridge Rectifier;
ABS208
型号: ABS208
厂家: First Silicon Co., Ltd    First Silicon Co., Ltd
描述:

Bridge Rectifier

文件: 总2页 (文件大小:381K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SEMICONDUCTOR  
ABS202 ~ ABS210  
TECHNICAL DATA  
Bridge Rectifier  
Features  
Outline Dimensions and Mark  
Io  
2A  
ABS  
.010(0.25)  
.006(0.15)  
VRRM  
200V~1000V  
.031(0.8)  
.012(0.3)  
Mounting Pad Layout  
Glass passivated chip  
-
+
.006(0.15)  
.001(0.02)  
High surge forward current capability  
177(4.5).252(6.4)  
169(4.3).236(6.0)  
0.225(5.72)  
.161(4.1)  
.154(3.9)  
Applications  
.20(5.1)  
.193(4.9)  
General purpose 1 phase Bridge  
rectifier applications  
.057(1.45)  
.049(1.25)  
0.157(4.00)  
0.035(0.90)  
.059(1.50)MAX  
.028(0.7)  
.024(0.6)  
Dimensions in inches and (millimeters)  
Limiting Values (Absolute Maximum Rating)  
ABS2  
06  
Item  
Symbol Unit  
Conditions  
02  
04  
08  
10  
Repetitive Peak Reverse  
Voltage  
VRRM  
V
A
200  
400  
600  
800  
1000  
60Hz sine wave,  
R-load,Tc=115  
Average Rectified Output  
Current  
On alumina substrate  
IO  
2.0  
Surge(Non-  
repetitive)Forward Current  
IFSM  
A
60HZ sine wave, 1 cycle, Tj=25℃  
50  
Storage Temperature  
Junction Temperature  
Tstg  
Tj  
-55 ~+150  
-55 ~+150  
Electrical Characteristics Ta=25Unless otherwise specified)  
Item  
Symbol Unit  
Test Condition  
Max  
VFM  
V
1.0  
Peak Forward Voltage  
Peak Reverse Current  
IFM=1.0A, Pulse measurement, Rating of per diode  
VRM=VRRM , Pulse measurement, Rating of per diode  
IRRM  
uA  
5
Ta=25℃  
500  
Ta=125℃  
R
Between junction and ambient, On alumina substrate  
60  
16  
θJ-A  
热阻  
/W  
Thermal Resistance  
R
Between junction and lead  
θJ-L  
2017 01 14  
Revision No : 0  
1/2  
ABS202 ~ ABS210  
Ratings and Characteristic Curves  
F
.
F
t
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
100  
10  
TJ=125°C  
Al. Substrate PC Board  
1.0  
0.1  
TJ=25°C  
Resistive or Inductive Load  
25  
50  
75  
100  
125  
150  
175  
00  
20  
40  
60  
80  
100 120  
140  
CaseTemperature (°C)  
percent of Rated Peak Reverse Voltage (%)  
F
.
Typ c  
t
Fo  
C
p
100  
10  
1
10  
TJ=25°C  
TJ=25°C  
1.0  
0.1  
pulse with 300μs  
1% duty cycle  
0.01  
0.0  
0.5  
1.0  
1.5  
2.0  
0.1  
1.0  
10  
100  
Instaneous Forward Voltage (V)  
Reverse Voltage (V)  
F
o
R
P
60  
50  
40  
30  
20  
10  
00  
8.3 ms Single Half Sine Wave  
(JEDEC Method)  
1
10  
100  
Number of Cycles  
2017 01 14  
Revision No : 0  
2/2  

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