BC807S-B [FS]
General Purpose Transistors;
| 型号： | BC807S-B |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | General Purpose Transistors |
| 文件： | 总3页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
BC807S
TECHNICAL DATA
GeneralPurposeTransistors
PNPSilicon
FEATURE
Collector current capability IC = -800 mA.
Collector-emitter voltage VCEO(max) = -45 V.
General purpose switching and amplification.
NPN complement : BC817 Series.
3
2
1
SOT–23
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
BC807S-A
5A1
3000/Tape&Reel
BC807S-B
BC807S-C
H5B
5C1
3000/Tape&Reel
3000/Tape&Reel
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
V CEO
V CBO
V EBO
I C
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
–45
–50
V
V
–5.0
–800
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
PD
TA
= 25°C
225
1.8
mW
mW/°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
R θJA
PD
556
°C/W
Alumina Substrate, (2) TA
Derate above 25°C
= 25°C
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R θJA
417
°C/W
°C
T J
, T stg
–55 to +150
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2008. 01. 09
Revision No : 0
1/3
BC807S
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C = –10 mA)
V(BR)CEO
–45
–50
–5.0
—
—
—
—
—
—
V
V
V
Collector–Emitter Breakdown Voltage
(VEB = 0, IC = –10 µA)
V(BR)CES
Emitter–Base Breakdown Voltage
(IE = –1.0 µA)
V(BR)EBO
ICBO
Collector Cutoff Current
(V
CB = –20 V)
—
—
—
—
–100
–5.0
nA
(VCB = –20 V, TJ = 150°C)
µA
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h FE
—
(IC= –100 mA, VCE = –1.0 V)
BC807–A
100
—
—
—
—
250
BC807–B
160
250
40
400
600
—
BC807–C
(IC = –500 mA, VCE = –1.0 V)
Collector–Emitter Saturation Voltage
(IC = –500 mA, IB = –50 mA)
V CE(sat)
—
—
—
–0.7
–1.2
V
V
Base–Emitter On Voltage
(IC = –500 mA, IB= –1.0 V)
V BE(on)
—
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f T
100
—
—
—
—
MHz
pF
(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)
Output Capacitance
C obo
10
(VCB = –10 V, f = 1.0 MHz)
2008. 01. 09
Revision No : 0
2/3
BC807S
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
L
2. CONTROLLING DIMENSION: INCH.
3
S
B
1
2
V
G
C
H
J
D
K
0.037
0.95
0.037
0 95
0.079
2.0
0.035
0.9
0 031
0.8
inches
mm
2008. 01. 09
Revision No : 0
3/3
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