BC807U [INFINEON]
PNP Silicon Transistor Array; PNP硅晶体管阵列
| 型号： | BC807U |
| 厂家： | 
Infineon |
| 描述： | PNP Silicon Transistor Array |
| 文件： | 总4页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC807U
PNP Silicon Transistor Array
4
For AF input stages and driver applications
High current gain
5
6
Low collector-emitter saturation voltage
Two ( galvanic) internal isolated Transistors
with good matching in one package
3
2
1
VPW09197
C1
6
B2
5
E2
4
TR2
TR1
1
2
3
E1
B1
C2
EHA07175
Type
Marking
Pin Configuration
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1
Package
SC74
BC807U
5Bs
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
45
50
V
V
V
V
CEO
CBO
EBO
5
500
1
mA
A
I
C
I
CM
100
200
330
150
-65 ... 150
mA
I
B
Peak base current
I
BM
Total power dissipation, T = 115 °C
mW
°C
P
S
tot
Junction temperature
Storage temperature
T
j
T
stg
Thermal Resistance
1)
Junction - soldering point
R
105
K/W
thJS
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
1
Nov-29-2001
BC807U
Electrical Characteristics at T =25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC Characteristics
Collector-emitter breakdown voltage
45
50
5
-
-
-
-
-
-
-
-
-
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I = 10 mA, I = 0
C
B
Collector-base breakdown voltage
I = 10 µA, I = 0
C
E
Emitter-base breakdown voltage
I = 10 µA, I = 0
E
C
-
100 nA
Collector cutoff current
= 25 V, I = 0
I
CBO
V
CB
E
-
50
µA
Collector cutoff current
= 25 V, I = 0 , T = 150 °C
I
CBO
V
CB
E
A
Emitter cutoff current
= 4 V, I = 0
-
100 nA
I
EBO
V
EB
C
-
DC current gain 1)
I = 100 mA, V = 1 V
h
FE
250
-
400
-
160
40
-
C
CE
I = 500 mA, V = 1 V
C
CE
Collector-emitter saturation voltage1)
I = 500 mA, I = 50 mA
-
0.7
V
V
CEsat
BEsat
C
B
Base-emitter saturation voltage 1)
I = 500 mA, I = 50 mA
-
-
1.2
V
C
B
AC Characteristics
Transition frequency
-
-
-
200
10
-
-
-
MHz
pF
f
T
I = 50 mA, V = 5 V, f = 20 MHz
C
CE
Collector-base capacitance
= 10 V, f = 1 MHz
C
cb
V
CB
Emitter-base capacitance
= 0.5 V, f = 1 MHz
60
C
eb
V
EB
1) Pulse test: t < 300 s; D < 2%
2
Nov-29-2001
BC807U
Total power dissipation P = f (T )
Collector cutoff current I
= f (T )
tot
S
CBO
A
V
= 25V
CB
EHP00213
105
400
mW
nA
Ι CBO
104
300
250
200
150
100
50
max
103
102
typ
101
100
0
°C
0
20
40
60
80
100 120
150
0
50
100
150
˚C
T
S
TA
Permissible Pulse Load
Permissible Pulse Load R
= f (t )
thJS
p
P
/ P
= f (t )
totmax
totDC
p
10 3
K/W
10 3
D=0
0.005
0.01
0.02
0.05
0.1
10 2
10 2
10 1
10 0
0.2
0.5
10 1
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10 0
10 -1
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
3
Nov-29-2001
BC807U
Collector-emitter saturation voltage
Base-emitter saturation voltage
I = f (V
), h = 10
I = f (V
), h = 10
C
CEsat
FE
C
BEsat
FE
EHP00215
EHP00214
103
103
mA
mA
Ι C
Ι C
150 ˚C
25 ˚C
-50 ˚C
150 ˚C
25 ˚C
-50 ˚C
102
5
102
5
101
5
101
5
100
5
100
5
10-1
0
10-1
0
0.2
0.4
0.6
V
0.8
1.0
2.0
3.0
V
4.0
VCEsat
VBEsat
DC current gain h = f (I )
Transition frequency f = f (I )
FE
C
T
C
V
= 1V
V
= 5V
CE
CE
EHP00210
103
EHP00216
103
5
MHz
5
f T
hFE
100 ˚C
25 ˚C
-50 ˚C
102
5
102
5
101
5
101
100
100
101
102
mA
Ι C
103
10-1
100
101
102 mA 103
Ι C
4
Nov-29-2001
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