BC807U [FS]
General Purpose Transistors;
| 型号： | BC807U |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | General Purpose Transistors 放大器 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：278K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
BC807U
TECHNICAL DATA
GeneralPurposeTransistors
PNPSilicon
FEATURE
Collector current capability IC = -500 mA.
Collector-emitter voltage VCEO(max) = -45 V.
General purpose switching and amplification.
NPN complement: BC817U Series.
3
2
1
We declare that the material of product compliance with RoHS requirements.
SOT–323
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
3
COLLECTOR
BC807U-A
5A1
3000/Tape&Reel
1
BC807U-B
BC807U-C
5B1
5C1
3000/Tape&Reel
3000/Tape&Reel
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
V CEO
V CBO
V EBO
I C
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
–45
–50
V
V
–5.0
–500
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
PD
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA
= 25°C
225
1.8
mW
mW/°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
R θJA
PD
556
°C/W
Alumina Substrate, (2) TA
Derate above 25°C
= 25°C
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R θJA
417
°C/W
°C
T J
, T stg
–55 to +150
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2008. 01. 18
Revision No : 0
1/3
BC807U
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C = –10 mA)
V(BR)CEO
–45
–50
–5.0
—
—
—
—
—
—
V
V
V
Collector–Emitter Breakdown Voltage
(VEB = 0, IC = –10 µA)
V(BR)CES
Emitter–Base Breakdown Voltage
(IE = –1.0 µA)
V(BR)EBO
ICBO
Collector Cutoff Current
(V
CB = –20 V)
—
—
—
—
–100
–5.0
nA
(VCB = –20 V, TJ = 150°C)
µA
ELECTRICAL CHARACTERISTICS (TA
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h FE
—
BC807U-A
(IC= –100 mA, VCE = –1.0 V)
100
—
—
—
—
250
BC807U-B
BC807U-C
160
250
40
400
600
—
(IC = –500 mA, VCE = –1.0 V)
Collector–Emitter Saturation Voltage
(IC = –500 mA, IB = –50 mA)
V CE(sat)
—
—
—
–0.7
–1.2
V
V
Base–Emitter On Voltage
V BE(on)
—
(IC = –500 mA, VCE= –1.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f T
100
—
—
—
—
MHz
pF
(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)
Output Capacitance
C obo
10
(VCB = –10 V, f = 1.0 MHz)
2008. 01. 18
Revision No : 0
2/3
BC807U
SC−70 (SOT−323)
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
e1
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
MILLIMETERS
INCHES
NOM
0 035
0 002
0.028 REF
0 014
0 007
0 083
0 049
0 051
E
H
E
DIM
A
A1
A2
b
c
D
E
e
MIN
0 80
0 00
NOM
0.90
0.05
MAX
1 00
0.10
MIN
0.032
0.000
MAX
0.040
0.004
1
2
0.7 REF
0.35
0.18
2.10
1.24
0 30
0.10
1 80
1.15
1 20
0.40
0 25
2 20
1 35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
1.30
0 65 BSC
0.425 REF
2.10
0.026 BSC
0 017 REF
0 083
e1
L
c
H
2 00
2.40
0.079
0.095
E
A2
A
0.05 (0.002)
L
GENERIC
A1
MARKING DIAGRAM
SOLDERING FOOTPRINT*
M
XX
0.65
0.025
0.65
0.025
1
XX
M
= Specific Device Code
= Date Code
= Pb−Free Package
1.9
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ ”,
may or may not be present.
0.075
0.9
0.035
0.7
0.028
mm
inches
SCALE 10:1
2008. 01. 18
Revision No : 0
3/3
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