BZT52C13 [FS]

Zener Diode 500mW SOD-123 Surface Mount;


型号：	BZT52C13
厂家：	First Silicon Co., Ltd
描述：	Zener Diode 500mW SOD-123 Surface Mount 二极管
文件：	总3页 (文件大小：196K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SEMICONDUCTOR

BZT52CXX Series

TECHNICAL DATA

500mW SOD-123 Surface Mount

Zener Diode

■ Features

● Wide Zener Voltage Range Selection, 2.4V to 75V

● Surface Device Type Mounting

● VZ Tolerance Selection of ±5%

0.6±0.1

Cathode

Anode

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Power Dissipation

Symbol

Rating

500

Unit

Junction Temperature

150

Operating Temperature Range

Storage Temperature range

OPR

stg

-65 to 150

℃

■ Electrical Characteristics Ta = 25℃

V_Z@ I_ZT

Z_ZT@ I_ZT

(Ω)

Max

Z_ZK@ I_ZK

(Ω)

I_R@ V_R

(µA)

Device

Type

Device

Marking

I_ZT

(mA)

I_ZK

(mA)

V_R

(Volts)

Nom

2.4

2.7

3.0

3.3

3.6

3.9

4.3

4.7

5.1

5.6

6.2

6.8

7.5

8.2

9.1

Max

Min

2.28

2.57

2.85

3.14

3.42

3.71

4.09

4.47

4.85

5.32

5.89

6.46

7.11

7.79

8.65

9.50

10.45

11.40

12.35

14.25

15.20

Max

2.52

2.84

3.15

3.47

3.78

4.10

4.52

4.94

5.36

5.88

6.51

7.14

7.86

8.61

9.56

10.50

11.55

12.60

13.65

15.75

16.80

BZT52C2V4

BZT52C2V7

BZT52C3V0

BZT52C3V3

BZT52C3V6

BZT52C3V9

BZT52C4V3

BZT52C4V7

BZT52C5V1

BZT52C5V6

BZT52C6V2

BZT52C6V8

BZT52C7V5

BZT52C8V2

BZT52C9V1

BZT52C10

BZT52C11

BZT52C12

BZT52C13

2V4Z

2V7Z

3V0Z

3V3Z

3V6Z

3V9Z

4V3Z

4V7Z

5V1Z

5V6Z

6V2Z

6V8Z

7V5Z

8V2Z

9V1Z

10VZ

11VZ

12VZ

13VZ

15VZ

16VZ

100

564

470

451

376

141

4.5

2.7

1.8

0.9

2.7

1.8

0.9

0.63

0.45

0.18

0.09

0.045

141

160

188

BZT52C15

BZT52C16

10.5

11.2

2015. 02. 22

Revision No : 0

1/3

BZT52CXX Series

■ Electrical Characteristics Ta = 25℃

V_Z@ I_ZT

(Volts)

Z_ZT@ I_ZT

(Ω)

Max

Z_ZK@ I_ZK

(Ω)

Max

I_R@ V_R

(µA)

Max

Device

Type

Device

Marking

I_ZT

(mA)

I_ZK

(mA)

V_R

(Volts)

Min

17.10

19.00

20.90

22.80

25.65

28.50

31.35

34.20

37.05

40.85

44.65

48.45

53.20

58.90

64.60

71.25

Nom

Max

18.90

21.00

23.10

25.20

28.35

31.50

34.65

37.80

40.95

45.15

49.35

53.55

58.80

65.10

71.40

78.75

BZT52C18

BZT52C20

BZT52C22

BZT52C24

BZT52C27

BZT52C30

BZT52C33

BZT52C36

BZT52C39

BZT52C43

BZT52C47

BZT52C51

BZT52C56

BZT52C62

BZT52C68

BZT52C75

18VZ

20VZ

22VZ

24VZ

27VZ

30VZ

33VZ

36VZ

39VZ

43VZ

47VZ

51VZ

56VZ

62VZ

68VZ

75VZ

212

235

282

306

329

353

376

400

423

447

470

0.045

12.6

14.0

15.4

16.8

18.9

21.0

23.0

25.2

27.3

30.1

33.0

35.7

39.2

43.4

47.6

52.5

0.5

130

150

170

180

200

215

240

255

V_FForward Voltage = 900mV Maximum @ I_F= 10 mA for all types

Notes:

1. The Zener Voltage (V_Z) is tested under pulse condition of 10mS.

2. The device numbers listed have a standard tolerance on the nominal zener voltage of ±5%.

3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter

voltage tolerances, contact your nearest Tak Cheong Electronics representative.

4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value equal to

10% of the dc zener current (I_ZTor I_ZK) is superimposed to I_ZTor I_ZK.

■ Typical Characterisitics

Fig.2 EFFECT OF ZENER VOLTAGE ON ZENER IMPEDANCE

Fig.1 TYPICAL FORWARD VOLTAGE

2015. 02. 22

Revision No : 0

2/3

BZT52CXX Series

■ Typical Characterisitics

600

500

400

300

200

100

125

150

175

200

TEMPERATURE[

]

Fig.3 POWER DISSIPATION VS. AMBIENT TEMP.

Fig.4 TYPICAL CAPACITANCE

Fig.6 ZENER BREAKDOWN CHARACTERISTICS

Fig.5 ZENER BREAKDOWN CHARACTERISTICS

Fig.7 TYPICAL LEAKGE CURRENT

2015. 02. 22

Revision No : 0

3/3

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