FDS202U [FS]

Switching Diodes;
FDS202U
型号: FDS202U
厂家: First Silicon Co., Ltd    First Silicon Co., Ltd
描述:

Switching Diodes

文件: 总4页 (文件大小:81K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SEMICONDUCTOR  
FDS202U  
TECHNICAL DATA  
Switching Diodes  
FEATURES  
Ultra high speed switching  
3
Suitable for high packing density layout.  
High reliability.  
2
1
SC-70 / SOT-323  
DEVICE MARKING AND ORDERING INFORMATION  
Device  
Marking  
Shipping  
ANODE  
ANODE  
1
2
FDS202UT1G  
FDS202UT3G  
N
N
3000/Tape&Reel  
10000/Tape&Reel  
3
CATHODE  
MAXIMUM RATINGS(Each Diode)  
Rating  
Symbol  
Value  
80  
Unit  
Vdc  
Reverse Voltag  
VR  
Io  
Forward Current  
100  
300  
1.2  
mAdc  
mAdc  
V
Peak Forward Surge Current  
Forward voltage (If = 100mA )  
Reverse current (Vr = 70V )  
I FM(surge)  
VF  
IR  
0.1  
uA  
Capacitance between terminals(f =1MHz)  
Reverse recovery time(Vr= 6V,If=5 mA)  
C T  
3.5  
4
pF  
nS  
T
rr  
ELECTRICAL CHARACTERISTIC CURVES  
125  
100  
75  
50  
25  
0
50  
1000  
100  
10  
Ta=100ºC  
75ºC  
20  
10  
5
50ºC  
25ºC  
0ºC  
Ta=85ºC  
50ºC  
25ºC  
2
1
1
0ºC  
25ºC  
30ºC  
0 5  
0.1  
0 2  
0 1  
0.01 0  
10  
20  
30  
40  
50  
0
25  
50  
75  
100  
125  
150  
0
0 2 0 4 0 6 0 8 1 0 1 2  
FORWARD VOLTAGE : V  
1 4 1 6  
(
V)  
AMBIENT TEMPERATURE :Ta (ºC)  
F
REVERSE VOLTAGE : V  
R (V)  
Fig 1 Power attenuation curve  
Fig.2 Forward characteristics  
(P Type)  
Fig.3 Reverse characteristics  
(P Type)  
2008. 04. 20  
Revision No : 0  
1/3  
FDS202U  
50  
1000  
100  
10  
Ta=100 °C  
f=1MHz  
20  
10  
5
4
2
0
75°C  
50°C  
Ta=85ºC  
50ºC  
25ºC  
25°C  
2
1
0°C  
1
0ºC  
30ºC  
P Type  
0 5  
25°C  
0 1  
0 01  
N Type  
0 2  
0 1  
0
0 2 0 4 0 6 0 8 1 0 1 2  
1 4 1 6  
(
V)  
0
2
4
6
8
10 12 14 16  
R
0
10 20 30 40  
50  
60  
R
70 80  
V)  
18 20  
(
V)  
FORWARD VOLTAGE : V  
F
REVERSE VOLTAGE : V  
REVERSE VOLTAGE : V  
(
Fig.4 Forward characteristics  
(N Type)  
Fig.6 Capacitance between  
Fig.5 Reverse characteristics  
(N Type)  
terminals characteristics  
0 01µF  
D U T  
10  
9
8
7
6
5
4
3
2
1
0
R
V
=
6V  
5  
PULSE GENERATOR  
SAMPLING  
OSCILLOSCOPE  
50  
OUTPUT 50  
INPUT  
100ns  
0
1
2
3
4
5
6
7
I
8
9
mA)  
10  
FORWARD CURRENT  
F
(
Fig 7 Reverse recovery time  
OUTPUT  
t
rr  
0
Fig.8 Reverse recovery time (trr) measurement circuit  
2008. 4.20  
Revision No : 0  
2/3  
FDS202U  
-
-
SC 70 / SOT 323  
NOTES:  
1. DIMENSION  
ING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
INCHES  
MIN MAX MIN MAX  
MILLIMETERS  
A
DIM  
L
A
B
C
D
0.071  
0.045  
0.032  
0.012  
0.087  
0.053  
0.040  
0.016  
1.80  
1.15  
0.80  
0.30  
2.20  
1.35  
1.00  
0.40  
3
B
S
1
2
G
H
J
K
L
N
S
0.047  
0.000  
0.004  
0.017 REF  
0.026 BSC  
0.028 REF  
0.055  
0.004  
0.010  
1.20  
0.00  
0.10  
0.425 REF  
0.650 BSC  
0.700 REF  
1.40  
0.10  
0.25  
D
G
J
N
C
2.40  
2.00  
0.079 0.095  
0 05 (0 002)  
K
H
0 025  
0 65  
0 025  
0 65  
0 075  
1 9  
0 035  
0 9  
0 028  
0 7  
inches  
mm  
2008. 4.20  
Revision No : 0  
3/3  
FDS202U  
EMBOSSED TAPE AND REEL DATA  
FOR DISCRETES  
T Max  
Outside Dimension  
Measured at Edge  
13.0mm ± 0.5mm  
(.512 ±.002’’)  
1.5mm Min  
(.06’’)  
A
50mm Min  
(1.969’’)  
20 2mm Min  
(.795’’)  
Full Radius  
G
Inside Dimension  
Measured Near Hub  
Size  
A Max  
330mm  
G
T Max  
8.4mm+1.5mm, -0.0  
(.33’’+.059’’, -0.00)  
14.4mm  
(.56’’)  
8 mm  
(12.992’’)  
Reel Dimensions  
Metric Dimensions Govern –– English are in parentheses for reference only  
Storage Conditions  
Temperature: 5 to 40 Deg.C (20 to 30 Deg. C is preferred)  
Humidity: 30 to 80 RH (40 to 60 is preferred )  
Recommended Period: One year after manufacturing  
(This recommended period is for the soldering condition only. The  
characteristics and reliabilities of the products are not restricted to  
this limitation)  

相关型号:

FDS202UT1G

Switching Diodes
FS

FDS202UT3G

Switching Diodes
FS

FDS2070N3

150V N-Channel PowerTrench MOSFET
FAIRCHILD

FDS2070N7

150V N-Channel PowerTrench MOSFET
FAIRCHILD

FDS21

HIGH VOLTAGE SWITCHING DIODE
FS

FDS2170N3

200V N-Channel PowerTrench剖 MOSFET
FAIRCHILD

FDS2170N7

200V N-Channel PowerTrench MOSFET
FAIRCHILD

FDS2170N7-BDA001B

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FAIRCHILD

FDS21S

High Voltage Switching Diode
FS

FDS21ST1G

High Voltage Switching Diode
FS

FDS21ST3G

High Voltage Switching Diode
FS

FDS21U

HIGH VOLTAGE SWITCHING DIODE
FS