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FDS21ST3G [FS]

High Voltage Switching Diode;
FDS21ST3G
型号: FDS21ST3G
厂家: First Silicon Co., Ltd    First Silicon Co., Ltd
描述:

High Voltage Switching Diode

文件: 总3页 (文件大小:139K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

FDS21U

HIGH VOLTAGE SWITCHING DIODE

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2 FS

FDS222

Common Cathode Silicon Dual Switching Diode

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1 FS

FDS222T1G

Common Cathode Silicon Dual Switching Diode

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1 FS

FDS222T3G

Common Cathode Silicon Dual Switching Diode

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1 FS

FDS252BG

Rectifier Diode, 1 Phase, 150A, Silicon,

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2 MITSUBISHI

FDS252SG

Rectifier Diode, 3 Phase, 220A, Silicon,

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3 MITSUBISHI

FDS252TG

Rectifier Diode, 3 Phase, 220A, Silicon,

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6 MITSUBISHI

FDS2570

150V N-Channel PowerTrench MOSFET

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49 FAIRCHILD

FDS2570F011

Power Field-Effect Transistor, 4A I(D), 150V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

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3 FAIRCHILD

FDS2570L86Z

Power Field-Effect Transistor, 4A I(D), 150V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

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1 FAIRCHILD

FDS2570_01

150V N-Channel PowerTrench MOSFET

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25 FAIRCHILD

FDS2572

150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET

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190 FAIRCHILD

FDS2572

N 沟道,UltraFET® Trench MOSFET,150V,4.9A,47mΩ

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0 ONSEMI

FDS2572-G

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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4 FAIRCHILD

FDS2572_NL

Power Field-Effect Transistor, 4.9A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, PLASTIC, SO-8

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2 FAIRCHILD

FDS2582

N-Channel PowerTrench MOSFET 150V, 4.1A, 66mз

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184 FAIRCHILD

FDS2582

N 沟道,PowerTrench® MOSFET,150V,4.1A,66mΩ

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0 ONSEMI

FDS2582_NL

Power Field-Effect Transistor, 4.1A I(D), 150V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8

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1 FAIRCHILD

FDS2670

200V N-Channel PowerTrench MOSFET

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68 FAIRCHILD

FDS2670

200V N 沟道 PowerTrench® MOSFET 3.0A,130mΩ

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0 ONSEMI