FDS914 [FS]

High−Speed Switching Diode;
FDS914
型号: FDS914
厂家: First Silicon Co., Ltd    First Silicon Co., Ltd
描述:

High−Speed Switching Diode

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中文:  中文翻译
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SEMICONDUCTOR  
FDS914  
TECHNICAL DATA  
High−Speed Switching  
Diode  
Features  
We declare that the material of product  
compliance with RoHS requirements.  
3
2
MAXIMUM RATINGS  
1
Symbol  
Value  
100  
Unit  
Vdc  
Rating  
Reverse Voltage  
V
R
SOT–23  
Forward Current  
I
F
200  
mAdc  
mAdc  
Peak Forward Surge Current  
THERMAL CHARACTERISTICS  
Characteristic  
I
500  
FM(surge)  
Symbol  
Max  
Unit  
Total Device Dissipation  
FR–5 Board (Note 1.)  
P
225  
mW  
D
T = 25 C  
A
Derate above 25 C  
MARKING DIAGRAM  
5D  
1.8  
mW/ C  
C/W  
Thermal Resistance,  
Junction to Ambient  
R
556  
JA  
D
Total Device Dissipation  
P
300  
mW  
Alumina Substrate (Note 2.)  
T = 25 C  
A
5D = Device Code  
Derate above 25 C  
2.4  
mW/ C  
C/W  
Thermal Resistance,  
Junction to Ambient  
R
417  
JA  
Junction and Storage  
Temperature Range  
T , T  
–55 to  
+150  
C
J
stg  
ORDERING INFORMATION  
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
A
Device  
Package  
Shipping  
Characteristic  
Symbol  
Min  
Max  
Unit  
FDS914LT1G  
FDS914LT3G  
SOT−23  
3000/Tape & Reel  
OFF CHARACTERISTICS  
Reverse Breakdown Voltage  
V
100  
Vdc  
10000/Tape & Reel  
(BR)  
SOT−23  
(I = 100 Adc)  
R
Reverse Voltage Leakage Current  
I
R
(V = 20 Vdc)  
(V = 75 Vdc)  
R
25  
5.0  
nAdc  
Adc  
R
Diode Capacitance  
(V = 0, f = 1.0 MHz)  
R
C
V
4.0  
1.0  
4.0  
pF  
Vdc  
ns  
T
Forward Voltage  
(I = 10 mAdc)  
F
F
Reverse Recovery Time  
t
rr  
(I = I = 10 mAdc) (Figure 1)  
F
R
1. FR–5 = 1.0  
0.75 0.062 in.  
2. Alumina = 0.4  
0.3  
0.024 in. 99.5% alumina.  
2009. 04. 20  
Revision No : 0  
1/3  
FDS914  
820  
+10 V  
2 k  
0.1 µF  
I
F
t
t
t
r
p
I
F
100 µH  
t
rr  
t
10%  
90%  
0.1  
µF  
DUT  
50  
OUTPUT  
PULSE  
GENERATOR  
50 NPUT  
SAMPLING  
OSCILLOSCOPE  
i
= 1 mA  
R(REC)  
I
R
V
R
OUTPUT PULSE  
(I = I = 10 mA; measured  
INPUT SIGNAL  
F
R
at i  
R(REC)  
= 1 mA)  
Notes: 1. A 2.0 kvariable resistor adjusted for a Forward Current (I ) of 10 mA.  
F
2. Input pulse is adjusted so I  
is equal to 10 mA.  
R(peak)  
3. t  
»t  
rr  
p
Figure 1. Recovery Time Equivalent Test Circuit  
°
°
°
°
°
°
°
°
Figure 2. Forward Voltage  
Figure 3. Leakage Current  
Figure 4. Capacitance  
2009. 04. 20  
Revision No : 0  
2/3  
FDS914  
SOT-23  
NOTES:  
A
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
L
2. CONTROLLING DIMENSION: INCH.  
3
S
B
1
2
V
G
C
H
J
D
K
P N 1. ANODE  
2. NO CONNECTION  
3. CATHODE  
0.037  
0.95  
0 037  
0.95  
0.079  
2.0  
0.035  
0.9  
0.031  
0.8  
inches  
mm  
2009. 04. 20  
Revision No : 0  
3/3  

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