FDS9400A [ONSEMI]
P 沟道，PowerTrench® MOSFET，30V，-3.4A，130mΩ;
| 型号： | FDS9400A |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，PowerTrench® MOSFET，30V，-3.4A，130mΩ |
| 文件： | 总7页 (文件大小：281K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
December 2001
FDS9400A
30V P-Channel PowerTrench MOSFET
General Description
Features
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
• –3.4 A, –30 V
RDS(ON) = 130 mΩ @ VGS = –10 V
RDS(ON) = 200 mΩ @ VGS = –4.5 V
• Low gate charge (2.4nC typical)
• Fast switching speed
Applications
• Power management
• Load switch
• High performance trench technology for extremely
low RDS(ON)
• Battery protection
• High power and current handling capability
D
5
6
7
8
4
3
2
1
D
D
D
G
SO-8
S
S
S
SO-8
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–30
V
V
A
VGSS
Gate-Source Voltage
25
–3.4
–10
ID
Drain Current – Continuous
– Pulsed
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
2.5
1.2
1
PD
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +175
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1c)
(Note 1)
50
125
25
RθJA
RθJA
RθJC
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS9400A
FDS9400A
13’’
12mm
2500 units
FDS9400A Rev B1(W)
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
–30
V
VGS = 0 V, ID = –250 µA
∆BVDSS
Breakdown Voltage Temperature
–23
ID = –250 µA, Referenced to 25°C
mV/°C
Coefficient
∆TJ
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = –24 V,
VGS = 0 V
–1
100
–100
µA
NA
NA
VGS = 25 V,
VGS = –25 V,
VDS = 0 V
VDS = 0 V
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
–1
–5
–1.8
4
–3
V
VDS = VGS, ID = –250 µA
ID = –250 µA, Referenced to 25°C
∆VGS(th)
Gate Threshold Voltage
mV/°C
mΩ
Temperature Coefficient
∆TJ
RDS(on)
Static Drain–Source
On–Resistance
VGS = –10 V,
ID = –1.0 A
105
157
147
130
200
210
VGS = –4.5 V, ID = –0.5 A
VGS= –10 V, ID = –1.0 A, TJ=125°C
ID(on)
gFS
On–State Drain Current
Forward Transconductance
VGS = –10 V,
VDS = –5 V,
VDS = –5 V
ID = –3.4 A
A
S
4.5
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
205
55
26
pF
pF
pF
VDS = –15 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
4.5
12.5
11
9
23
20
4
ns
ns
ns
VDD = –15 V,
VGS = –10 V,
ID = –1 A,
RGEN = 6 Ω
2
ns
Qg
Qgs
Qgd
2.4
1.0
0.7
3.5
nC
nC
nC
V
DS = –15 V,
ID = –1 A,
VGS = –5 V
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
–2.1
–1.2
A
V
VSD
V
GS = 0 V, IS = –2.1 A (Note 2)
–0.8
Voltage
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS9400A Rev B1(W)
Typical Characteristics
2
1.8
1.6
1.4
1.2
1
10
VGS = -10V
-6.0V
-5.0V
-4.5V
8
6
4
2
0
VGS=-4.5V
-4.0V
-5.0V
-6.0V
-3.5V
-7.0V
-8.0V
-10V
-3.0V
0.8
0
1
2
3
4
5
0
2
4
6
8
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.7
0.55
ID = -1A
VGS = -10V
ID = -0.5A
1.5
1.3
1.1
0.9
0.7
0.45
0.35
0.25
0.15
0.05
TA = 125oC
TA = 25oC
-50
-25
0
25
50
75
100
125
150
175
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
5
4
3
2
1
0
10
VGS =0V
VDS = -5V
25oC
125oC
TA = -55oC
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
1.5
2
2.5
3
3.5
4
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS9400A Rev B1(W)
Typical Characteristics
10
300
250
200
150
100
50
ID = -1A
VDS = -5V
-10V
f = 1 MHz
GS = 0 V
V
8
6
4
2
0
CISS
-15V
COSS
CRSS
0
0
1
2
3
4
5
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
50
40
30
20
10
0
SINGLE PULSE
R
θJA = 125°C/W
TA = 25°C
100
1ms
s
µ
10
RDS(ON) LIMIT
10ms
100ms
1
1s
10s
DC
VGS = -10V
SINGLE PULSE
0.1
0.01
R
θJA = 125oC/W
TA = 25oC
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
-VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
R
θJA(t) = r(t) * RθJA
0.2
θJA = 125oC/W
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
J - TA = P * RθJA(t)
0.01
T
SINGLE PULSE
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS9400A Rev B1(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
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failure to perform when properly used in accordance
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reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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