FFB3946DW1T1G [FS]
Dual General Purpose Transistors;
| 型号： | FFB3946DW1T1G |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | Dual General Purpose Transistors |
| 文件： | 总12页 (文件大小：234K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FFB3946D
TECHNICAL DATA
Dual General Purpose
Transistors
The FFB3946D device is a spin–off of our popular
SOT–23/SOT–323 three–leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT–363
six–leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low–power surface mount
applications where board space is at a premium.
•hFE, 100–300
6
5
4
1
2
3
• Low VCE(sat), < 0.4 V
• Simplifies Circuit Design
SOT 363/SC-88
• Reduces Board Space
• Reduces Component Count
•Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
We declare that the material of product
compliance with RoHS requirements.
MAXIMUM RATINGS
3
2
1
Rating
Collector-Emitter Voltage
(NPN)
Symbol
V CEO
Value
Unit
Vdc
Q1
40
Q2
(PNP)
-40
Collector-Base Voltage
(NPN)
VCBO
V EBO
I C
Vdc
Vdc
mAdc
V
4
5
6
60
*Q1 PNP
Q2 NPN
(PNP)
-40
Emitter-Base Voltage
(NPN)
6.0
(PNP)
-5.0
ORDERING INFORMATION
CollectorCurrent-Continuous
(NPN)
Device
Marking
Shipping
FFB3946DW1T1G
FFB3946DW1T3G
46
46
3000Units/Reel
10000Units/Reel
200
(PNP)
-200
Electrostatic Discharge
ESD HBM>16000,
MM>2000
THERMAL CHARACTERISTICS
Characteristic
Total Package Dissipation (1)
Symbol
Max
150
Unit
mW
PD
TA = 25°C
Thermal Resistance Junction
to Ambient
RθJA
833
°C/W
Junction and Storage
Temperature Range
TJ,Tstg –55 to +150 °C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
2008. 03. 10
Revision No : 0
1/12
FFB3946D
ELECTRICALCHARACTERISTICS(TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Vdc
OFF CHARACTERISTICS
(2)
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, I B = 0)
V(BR)CEO
(NPN)
(PNP)
40
–
–
(IC = –1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(IC = 10 µAdc, IE = 0)
–40
V(BR)CBO
V(BR)EBO
IBL
Vdc
Vdc
(NPN)
(PNP)
60
–
–
(IC = –10 µAdc, IE = 0)
–40
Emitter–Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
(NPN)
(PNP)
6.0
–
–
(IE = –10 µAdc, IC = 0)
–5.0
Base Cutoff Current
nAdc
nAdc
(VCE = 30 Vdc, V EB = 3.0 Vdc)
(NPN)
(PNP)
–
–
50
(VCE = –30 Vdc, V = –3.0 Vdc)
–50
EB
Collector Cutoff Current
ICEX
(VCE = 30 Vdc, V EB = 3.0 Vdc)
(NPN)
(PNP)
–
–
50
(VCE = –30 Vdc, V = –3.0 Vdc)
–50
EB
ON CHARACTERISTICS (2)
DC Current Gain
hFE
–
(IC = 0.1 mAdc, V = 1.0 Vdc)
(NPN)
40
70
–
–
CE
(IC = 1.0 mAdc, V = 1.0 Vdc)
CE
(IC = 10 mAdc, V = 1.0 Vdc)
100
60
300
–
CE
(IC = 50 mAdc, V = 1.0 Vdc)
CE
(IC = 100 mAdc, V = 1.0 Vdc)
30
–
CE
(IC = –0.1 mAdc, V
= –1.0 Vdc)
(PNP)
60
80
–
–
CE
(IC = –1.0 mAdc, V = –1.0 Vdc)
CE
(IC = –10 mAdc, V = –1.0 Vdc)
100
60
300
–
CE
(IC = –50 mAdc, V = –1.0 Vdc)
CE
(IC = –100 mAdc, V
= –1.0 Vdc)
30
–
CE
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, I B = 1.0 mAdc)
(IC = 50 mAdc, I B = 5.0 mAdc)
(IC = –10 mAdc, I B = –1.0 mAdc)
(IC = –50 mAdc, I B = –5.0 mAdc)
Base–Emitter Saturation Voltage
(IC = 10 mAdc, I B = 1.0 mAdc)
(IC = 50 mAdc, I B = 5.0 mAdc)
(IIC = –10 mAdc, I B = –1.0 mAdc)
(IC = –50 mAdc, I B = –5.0 mAdc)
VCE(sat)
Vdc
Vdc
(NPN)
(PNP)
–
–
–
–
0.2
0.3
–0.25
–0.4
VBE(sat)
(NPN)
(PNP)
0.65
–
0.85
0.95
–0.65
–
–0.85
–0.95
2. Pulse Test: Pulse Width < 300 µs; Duty Cycle <2.0%.
2008. 03. 10
Revision No : 0
2/12
FFB3946D
ELECTRICALCHARACTERISTICS (TA=25°C unless otherwise noted)
Characteristic
SMALL–SIGNALCHARACTERISTICS
Current–Gain – Bandwidth Product
Symbol
Min
Max
Unit
fT
Cobo
Cibo
hie
MHz
(IC = 10 mAdc, V = 20 Vdc, f = 100 MHz)
(NPN)
(PNP)
300
250
–
–
CE
(IC = –10 mAdc, V = –20 Vdc, f = 100 MHz)
CE
Output Capacitance
pF
pF
(VCB = 5.0 Vdc, I E = 0, f = 1.0 MHz)
(VCB = –5.0 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
(NPN)
(PNP)
–
–
4.0
4.5
(VEB = 0.5 Vdc, I C = 0, f = 1.0 MHz)
(VEB = –0.5 Vdc, I C = 0, f = 1.0 MHz)
Input Impedance
(NPN)
(PNP)
–
–
8.0
10.0
kΩ
(VCE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
(VCE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(NPN)
(PNP)
1.0
2.0
10
12
–4
hre
X10
(VCE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
(VCE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
Small–Signal Current Gain
(NPN)
(PNP)
0.5
0.1
8.0
10
hFE
–
µmhos
dB
(VCE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
(VCE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
Output Admittance
(NPN)
(PNP)
100
100
400
400
hoe
(VCE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
(VCE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
Noise Figure
(NPN)
(PNP)
1.0
3.0
40
60
NF
–
(VCE=5.0 Vdc,I C=100 µAdc, R S=1.0 k Ω, f=1.0kHz) (NPN)
(VCE=–5.0 Vdc,I C=–100 µAdc, RS=1.0 kΩ, f=1.0kHz) (PNP)
SWITCHINGCHARACTERISTICS
5.0
4.0
–
Delay Time
(VCC = 3.0 Vdc, V BE = –0.5 Vdc)
(VCC = –3.0 Vdc, V BE = 0.5 Vdc)
(IC = 10 mAdc, I B1 = 1.0 mAdc)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
td
t r
ts
tf
–
–
–
–
–
–
–
–
35
35
ns
ns
Rise Time
35
(IC = –10 mAdc, I = –1.0 mAdc)
35
B1
Storage Time (VCC = 3.0 Vdc, I C = 10 mAdc)
(VCC = –3.0 Vdc, I C = –10 mAdc)
200
225
50
Fall Time
(IB1 = IB2 = 1.0 mAdc)
(IB1 = IB2 = –1.0 mAdc)
75
2008. 03. 10
Revision No : 0
3/12
FFB3946D
TYPICALELECTRICALCHARACTERISTICS
(NPN)
+3 V
+3 V
DUTY CYCLE = 2%
300 ns
t
1
10 < t < 500 s
1
DUTY CYCLE = 2%
+10.9 V
+10.9 V
< 1 ns
275
275
10 k
10 k
0
-0.5 V
C < 4 pF*
C < 4 pF*
s
s
1N916
-9.1 V'
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise T ime
Equivalent T est Circuit
Figure 2. Storage and Fall T ime
Equivalent T est Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T = 25 C
J
T = 125 C
J
10
5000
(NPN)
V
= 40 V
CC
I /I = 10
(NPN)
3000
2000
7.0
C B
5.0
1000
700
C
ibo
500
3.0
2.0
Q
T
300
200
C
obo
Q
A
100
70
1.0
0 1
50
0.2 0.3 0.5 0.7 1.0
REVERSE
2.0 3.0 5.07.010
BIAS VOL
20 30 40
TS)
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
I
AGE (VOL
, COLLECTOR
T
CURRENT (mA)
C
Figure 3. Capacitance
Figure 4. Charge Data
2008. 03. 10
Revision No : 0
4/12
FFB3946D
TYPICALELECTRICALCHARACTERISTICS
(NPN)
500
500
I /I = 10
C B
V
= 40 V
= 10
CC
300
200
300
I
/I
C B
200
100
70
100
t @ V = 3.0 V
r CC
70
50
50
30
20
30
20
40 V
15 V
10
10
(NPN)
(NPN)
2.0 3.0
2.0 V
7
5
7
5
t @ V = 0 V
OB
d
1.0
5.0 7.010
20
30 50 70 100
200
1.0
2.0 3.0
5.0 7.010
20
30 50 70 100
200
I , COLLECOTR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 5. Turn±On Time
Figure 6. Rise Time
500
500
1
t' = t - / t
s
s
8 f
V
= 40 V
CC
= I
300
200
300
200
I
= I
I /I = 20
C B
= 10
B1 B2
C B
I /I
I
B1 B2
I /I = 20
C B
100
70
100
70
50
50
= 20
I
/I
C B
I
I
= 10
/I = 10
C B
/I
C B
30
20
30
20
10
10
(NPN)
(NPN)
7
5
7
5
1.0
2.0 3.0
5.0 7.010
20
30 50 70 100
200
1.0
2.0 3.0
5.0 7.010
20
30 50 70 100
200
I
C
I
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
TYPICAL AUDIO SMALL±SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
= 5.0 Vdc, T = 255C, Bandwidth = 1.0 Hz)
A
12
10
8
14
SOURCE RESISTANCE = 200
= 1.0 mA
f = 1.0 kHz
I
C
= 1.0 mA
I
C
12
10
8
I
C
= 0.5 mA
SOURCE RESISTANCE = 200
= 0.5 mA
I
C
= 50 A
I
C
6
4
I
= 100 A
SOURCE RESISTANCE = 1.0 k
= 50 A
C
6
4
2
0
I
C
2
0
SOURCE RESISTANCE = 500
= 100 A
)
(NPN
(NPN)
10
I
C
0.1 0.2 0.4
1.0 2.0 4.0
20
40
100
0.1 0.2 0.4
1.0 2.0 4.0
10 20
40
100
f, FREQUENCY (kHz)
R , SOURCE RESISTANCE (k OHMS)
S
Figure 9. Noise Figure
Figure 10. Noise Figure
2008. 03. 10
Revision No : 0
5/12
FFB3946D
TYPICALELECTRICALCHARACTERISTICS
(NPN)
h PARAMETERS
(V
CE
= 10 Vdc, f = 1.0 kHz, T = 25˚C)
A
300
200
100
50
(NPN)
(NPN)
20
10
5
100
70
50
2
1
30
0 1
0.2 0.3 0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3 0.5
1.0
2.0 3.0
5.0
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 11. Current Gain
Figure 12. Output Admittance
20
10
10
7.0
5.0
(NPN)
(NPN)
5.0
2.0
3.0
2.0
1.0
0.5
1.0
0.7
0.5
0.2
0.1
0.2 0.3 0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3 0.5
1.0
2.0 3.0
5.0
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 13. Input Impedance
Figure 14. Voltage Feedback Ratio
2008. 03. 10
Revision No : 0
6/12
FFB3946D
TYPICALELECTRICALCHARACTERISTICS
(NPN)
2.0
1.0
T = +125 C
J
V
CE
= 1.0 V
(NPN)
+25 C
0.7
0.5
-55 C
0.3
0.2
0.1
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
200
I
C
, COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
1.0
0.8
T = 25
J
C
(NPN)
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
I
B
, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
1.2
1.0
0.8
1.0
(NPN)
T = 25
J
C
(NPN)
V
@I
/I =10
BE(sat) C B
+25 C TO +125 C
-55 C TO+25 C
0.5
0
θVC FOR V
CE(sat)
V
@ V =1.0V
BE CE
0.6
0.4
-0.5
-1.0
-55 C TO +25 C
V
@ I /I =10
C B
CE(sat)
+25 C TO+125 C
θ
VBFOR V
BE(sat)
0.2
0
-1.5
-2.0
1.0
2.0
5.0
10
20
50
100
200
0
20 40
60
I , COLLECTOR CURRENT (mA)
C
80
100 120 140 160
180 200
I , COLLECTOR CURRENT (mA)
C
oltages
Figure 17. "ON" V
Figure 18. Temperature Coefficients
2008. 03. 10
Revision No : 0
7/12
FFB3946D
TYPICALELECTRICALCHARACTERISTICS
(PNP)
3 V
3 V
< 1 ns
+9.1 V
275
275
< 1 ns
+0.5 V
10 k
10 k
0
C < 4 pF*
s
C < 4 pF*
s
1N916
10.6 V
300 ns
DUTY CYCLE = 2%
10 < t < 500 s
1
t
1
10.9 V
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
Figure 19. Delay and Rise T ime
Equivalent Test Circuit
Figure 20. Storage and Fall T ime
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T = 25 C
J
T = 125 C
J
10
5000
V
= 40 V
CC
I /I = 10
(PNP)
(PNP)
3000
2000
7.0
C B
C
5.0
obo
1000
700
C
ibo
500
3.0
2.0
300
200
Q
T
Q
A
100
70
1.0
0.1
50
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.07.0 10
20 30 40
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
REVERSE BIAS (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 21. Capacitance
Figure 22. Charge Data
500
500
I /I = 10
C B
(PNP)
(PNP)
V
= 40 V
CC
= I
300
200
300
200
I
B1 B2
I /I = 20
C B
100
70
100
70
t @ V = 3.0 V
r
CC
50
50
15 V
30
20
30
20
I /I = 10
C B
40 V
10
10
7
5
2.0 V
7
5
t @ V
d
= 0V
OB
1.0
2.0 3.0
5.0 7.010
20
30 50 70 100
200
200
1.0
2.0 3.0 5.0 7.010
20
30 50
70 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 24. Fall Time
Figure 23. Turn
-
On Time
2008. 03. 10
Revision No : 0
8/12
FFB3946D
TYPICALELECTRICALCHARACTERISTICS
(PNP)
TYPICAL AUDIO SMALL±SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
= ±5.0 Vdc, T = 25˚C, Bandwidth = 1.0 Hz)
A
5.0
4.0
3.0
2.0
1.0
0
12
SOURCE RESISTANCE = 200
= 1.0 mA
f = 1.0 kHz
I
= 1.0 mA
C
I
C
10
I
C
= 0 5 mA
SOURCE RESISTANCE = 200
= 0.5 mA
I
C
8
6
4
2
0
ANCE = 2.0 k
SOURCE RESIST
I
C
= 50 µA
I
=50 µA
C
SOURCE RESISTANCE = 2.0 k
I = 100 µA
I
C
=100 µA
C
(PNP)
10
(PNP)
10 20
0.1 0 2 0.4
1.0 2.0 4.0
20
40
100
0.1 0.2 0.4
1.0 2.0 4.0
40
100
f, FREQUENCY (kHz)
R , SOURCE RESISTANCE (k OHMS)
g
Figure 25.
Figure 26.
h PARAMETERS
(V
CE
= ±10 Vdc, f = 1.0 kHz, T = 25˚C)
A
300
100
70
(PNP)
(PNP)
50
200
30
20
100
70
10
7
50
30
5
0 1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I
C
, COLLECTOR CURRENT (mA)
I , COLLECTOR CURRENT (mA)
C
Figure 27. Current Gain
Figure 28. Output Admittance
(PNP)
20
10
10
7.0
5.0
(PNP)
7.0
5.0
3.0
2.0
3.0
2.0
1.0
0.7
0.5
1.0
0.7
0.5
0.3
0.2
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0
7.0
10
0.1
0 2 0.3
0 5
0.7
1.0
2.0 3.0
7.0
5.0 10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 29. Input Impedance
Figure 30. Voltage Feedback Ratio
2008. 03. 10
Revision No : 0
9/12
FFB3946D
TYPICALELECTRICALCHARACTERISTICS
(PNP)
2.0
1.0
T = +125 ˚C
J
V
CE
= 1.0 V
+25˚C
0.7
0.5
-55˚C
0.3
0.2
(PNP)
0 3
0.1
0.1
0.2
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
200
I
C
, COLLECTOR CURRENT (mA)
Figure 31. DC Current Gain
T = 25 C
J
(PNP)
1.0
0.8
0.6
0.4
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.2
0
0.01
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7 1.0
2.0
3.0
5.0 7.0 10
I , BASE CURRENT (mA)
B
Figure 32. Collector Saturation Region
1.0
0.8
0.6
1.0
T = 25 C
J
V
@ I /I = 10
BE(sat) C B
0.5
0
+25 C +125 C
TO
FOR V
θVC
CE(sat)
V
@ V = 1.0 V
BE CE
-55 C TO+25 C
(PNP)
(PNP)
-0.5
-1.0
+25 C +125 C
TO
0.4
0.2
0
-55 C TO+25 C
V
@ I /I = 10
C B
CE(sat)
FOR V
θ
BE(sat)
-1.5
-2.0
VB
1.0
2.0 5.0 10
20
50
100
200
0
20 40
60
I , COLLECTOR CURRENT (mA)
C
80
100 120 140 160
180 200
I , COLLECTOR CURRENT (mA)
C
Figure 33. "ON" Voltages
Figure 34. Temperature Coefficients
2008. 03. 10
Revision No : 0
10/12
FFB3946D
SC-88/SOT -363
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
G
2. CONTROLLING DIMENSION: INCH.
INCHES
MAX
MILLIMETERS
DIM
MI
MIN
1.80
1.15
0.80
0.10
MAX
6
5
2
4
A
B
C
D
G
H
J
0.071
0.045
0.031
0.004
0.087
0.053
0.043
0.012
2.20
1.35
1.10
0.30
-B-
S
1
3
0.026 BSC
0.65 BSC
---
0.004
0.010
0.012
---
0.10
0.10
0.10
0.25
0.30
M
M
0.2 (0.008)
N
B
D6PL
0.004
0.004
K
N
S
0.008 REF
0.20 REF
2.20
0.079
0.087
2.00
J
C
PIN 1 EMITTER 2
2 BASE2
K
H
3 COLLECTOR 1
4 EMITTER 1
5 BASE1
6 COLLECTOR2
0.5 mm (min)
1.9 mm
2008. 03. 10
Revision No : 0
11/12
FFB3946D
EMBOSSED TAPE AND REEL DATA
FOR DISCRETES
T Max
Outside Dimension
Measured at Edge
13.0mm ± 0.5mm
(.512 ±.002’’)
1.5mm Min
(.06’’)
A
50mm Min
(1.969’’)
20 2mm Min
(.795’’)
Full Radius
G
Inside Dimension
Measured Near Hub
Size
A Max
G
T Max
14.4mm
(.56’’)
8.4mm+1.5mm, -0.0
(.33’’+.059’’, -0.00)
330mm
8 mm
(12.992’’)
Reel Dimensions
Metric Dimensions Govern –– English are in parentheses for reference only
Storage Conditions
Temperature: 5 to 40 Deg.C (20 to 30 Deg. C is preferred)
Humidity: 30 to 80 RH (40 to 60 is preferred )
Recommended Period: One year after manufacturing
(This recommended period is for the soldering condition only. The
characteristics and reliabilities of the products are not restricted to
this limitation)
2008. 03. 10
Revision No : 0
12/12
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