FTA1774XT1G [FS]

General Purpose Transistors PNP Silicon;


型号：	FTA1774XT1G
厂家：	First Silicon Co., Ltd
描述：	General Purpose Transistors PNP Silicon
文件：	总3页 (文件大小：729K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SEMICONDUCTOR

FTA1774

TECHNICAL DATA

General Purpose Transistors

PNP Silicon

ORDERING INFORMATION

Shipping

Device

Marking

3000/Tape & Reel

10000/Tape & Reel

FTA1774XT1G

FTA1774XT3G

Absolute maximun ratings (Ta=25℃)

SC-89

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Limits

−60

Unit

CBO

CEO

EBO

−50

COLLECTOR

−6

−0.15

A (DC)

Collector power

dissipation

0.15

BASE

EMITTER

150

Junction temperature

Storage temperature

Tstg

−

55~ +150

Electrical characteristics (Ta=25℃)

Parameter

Symbol

BV^CBO

Min.

−60

−50

−6

−

Typ. Max.

Unit

Conditions

−

−50µA

−1µA

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

CEO

BV^EBO

−

−50µA

−60V

−6V

−50mA/−5mA

−6V, I −1mA

2mA, f

0A, f

CBO

EBO

CE(sat)

−

−0 1

−0 5

560

−

µA

−

Emitter cutoff current

−

IC/IB

Collector-emitter saturation voltage

DC current transfer ratio

120

−

140

4.0

MHz

−12V, I

30MHz

Transition frequency

Cob

−

5.0

1MHz

Output capacitance

Device markeing

FTA1774QT1G=FQ

FTA1774ST1G=FS

FTA1774RT1G=FR

hFE values are classified as follows :

Item

270~560

120~270

180~390

2008. 4. 18

Revision No : 0

1/3

FTA1774

−35.0

−100

−80

−50

−10

−8

=−6V

Ta=25 ˚C

Ta=100 ˚C

25˚C

−40˚C

−31.5

−28.0

−24.5

−21.0

−17.5

−14.0

−10.5

−7.0

−20

−10

−500

−450

−400

−350

−300

−5

−250

−200

−60

−40

−20

−6

−4

−2

−1

−150

−100

−0.5

−50µA

−3.5µA

−0.2

−0.1

_B=0

IB=0

−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6

−0.4

−0.8

−1.2

−1.6

−2.0

−0.2

−1

−2

−3

−4

−5

COLLECTOR TO EMITTER VOLTAGE : V ^CE

(

BASE TO EMITTER VOLTAGE : V ^BE

(

COLLECTOR TO MITTER VOLTAGE

(

Fig.2 Grounded emitter output

characteristics (I)

Fig.3 Grounded emitter output

characteristics (II)

Fig.1 Grounded emitter propagation

characteristics

500

−1

500

Ta=25 ˚C

Ta=100 ˚C

25˚C

^CE=−5V

−3V

−1V

Ta=25 ˚C

−0 5

−40˚C

200

100

200

100

−0 2

−0 1

/I =

−0 05

V^CE=−6V

−0.2 −0.5 −1 −2

−5 −10 −20 −50 −100

−0 2 −0 5 −1 −2

−5 −10 −20 −50 −100

−0 2 −0 5 −1 −2

−5 −10 −20 −50 −100

COLLECTOR CURRENT

I C (

mA)

COLLECTOR CURRENT : I

C mA)

(

COLLECTOR CURRENT : I

C mA)

(

Fig.5 DC current gain vs.

collector current (II)

Fig.4 DC current gain vs.

collector current (I)

Fig.6 Collector-emitter saturation

voltage vs. collector current (I)

1000

500

−1

/lB

=10

Ta=25 ˚C

f=1MHz

V^CE=−12V

−0 5

200

100

−0 2

−0 1

Ta=100 ˚C

25˚C

−40˚C

−0 05

−0 5

−1

−2

−5

−10 −20

0 5

50 100

−0 2 −0 5 −1 −2

−5 −10 −20 −50 −100

mA)

COLLECTOR TO BASE VOLTAGE : V ^CB(V)

EMITTER TO BASE VOLTAGE : V ^EB(V)

EMITTER CURRENT : I

(

mA)

COLLECTOR CURRENT : I

(

Fig.9Collector output capacitance vs.

collector-base voltage

Fig.7 Collector-emitter saturation

voltage vs. collector current (II)

Fig.8 Gain bandwidth product vs.

emitter current

Emitter inputcapacitance vs.

emitter-base voltage

2008. 4. 18

Revision No : 0

2/3

FTA1774

SC-89

-X-

NOTES:

DIMENSIONING AND TOLERANCING PER ANSI

Y14 5M, 1982

CONTROLLING DIMENSION: MILLIMETERS

MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS MINIMUM LEAD THICKNESS

IS THE MINIMUM THICKNESS OF BASE

MATERIAL

-Y-

463C-01 OBSOLETE, NEW STANDARD 463C-02

MILLIMETERS

DIM MIN NOM MAX MIN

INCHES

NOM MAX

2 PL

1 50

0 75

0 60

0 23

1 60

0 85

0 70

1 70

0 95

0 80

0 33

0 059 0 063

0 030 0 034

0 024 0 028

0 009 0 011

0 020 BSC

0 067

0 040

0 031

0 013

3 PL

0.08 (0.003) X Y

0 28

0 50 BSC

0 53 REF

0 15

0 40

1 10 REF

−−−

0 021 REF

0 10

0 30

0 20

0 50

0 004 0 006

0 012 0 016

0 043 REF

0 008

0 020

−−−

1 50

−−− −−−

0 067

−−−

−−− −−−

1 60

1 70

0 059 0 063

SEATING

PLANE

-T-

RECOMMENDED PATTERN

OF SOLDER PADS

2008. 4. 18

Revision No : 0

3/3

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