FTC3876Y [FS]
General Purpose Transistors;
| 型号： | FTC3876Y |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | General Purpose Transistors |
| 文件： | 总3页 (文件大小：230K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FTC3876
TECHNICAL DATA
General Purpose Transistors
NPN Silicon
We declare that the material of product compliance with RoHS requirements.
•
Purpose: General amplifier and switching application.
Features: Excellent hFE linearity, complementary pair with FTA1505.
Absolute maximum ratings(Ta=25℃)
3
Symbol
Rating
Unit
V
2
VCBO
VCEO
VEBO
IC
35
30
1
V
SOT– 23
5.0
500
50
V
mA
mA
mW
℃
IB
3
COLLECTOR
PC
150
150
1
Tj
BASE
Tstg
-55～150 ℃
2
EMITTER
Electrical characteristics(Ta=25℃)
Rating
Typ
Symbol
Test condition
Unit
Min
Max
ICBO
VCB=35V
IE=0
0.1
0.1
400
μA
μA
IEBO
VEB=5.0V
VCE=1.0V
VCE=6.0V
IC=100mA
VCE=1.0V
VCE=6.0V
IC=0
hFE(1)
hFE(2)
VCE(sat)
VBE
IC=100mA
IC=400mA
IB=10mA
IC=100mA
IC=20mA
70
25
0.1
0.8
300
7.0
0.25
1.0
V
V
fT
MHz
pF
Cob
VCB=6.0V IE=0 f=1.0MHz
hFE(1) classifications、Marking：
hFE(1) Classifications
hFE(1) Range
O
Y
GR
70～140
HWO
120～240
200～400
Marking
HWY
HWG
2014. 01. 18
Revision No : 0
1/3
FTC3876
2014. 01. 18
Revision No : 0
2/3
FTC3876
SOT -23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
A
3
L
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MILLIMETERS
S
B
DIM
1
2
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
V
G
C
K
L
S
H
J
D
K
V
0 037
0 95
0 037
0 95
0 079
2 0
0 035
0 9
0 031
0 8
inches
mm
2014. 01. 18
Revision No : 0
3/3
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