FTC4373Y [FS]
NPN Transistor;
| 型号： | FTC4373Y |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | NPN Transistor |
| 文件： | 总1页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FTC4373
TECHNICAL DATA
A
H
C
NPN Transistor
G
FEATURES
Small Flat Package
D
D
K
F
F
DIM MILLIMETERS
High Current Application
High Voltage
A
B
C
D
E
F
4.70 MAX
_
+
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1
2
3
High Transition Frequency
_
+
1.50 0.10
G
H
J
0.40 TYP
1.7 MAX
1. BASE
2. COLLECTOR
3. EMITTER
0.7 MIN
K
0.5+0.15/-0.10
SOT-89
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
120
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
120
V
5
V
Collector Current
0.8
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
500
mW
℃/W
℃
RθJA
Tj
250
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC= -1mA,IE=0
Min
Typ
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
120
120
5
V
V
IC=-10mA,IB=0
IE=-1mA,IC=0
V
VCB=-120V,IE=0
100
100
240
1
nA
nA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
DC current gain
hFE
VCE=-5V, IC=-100mA
IC=-500mA,IB=-50mA
VCE=-5V, IC=-500mA
VCB=-10V,IE=0, f=1MHz
80
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE
V
V
1
30
pF
Collector output capacitance
Cob
VCE=-5V,IC=-0.1A,
f=30MHz
fT
120
MHz
Transition frequency
CLASSIFICATION OF hFE
O
Y
RANK
80–160
120–240
CY
RANGE
CO
MARKING
2011. 08. 11
Revision No : 0
1/1
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