FTC4377B [FS]
TRANSISTOR (NPN);
| 型号： | FTC4377B |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | TRANSISTOR (NPN) |
| 文件： | 总2页 (文件大小：376K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FTC4377
TECHNICAL DATA
FTC4377 TRANSISTOR (NPN)
A
H
C
G
FEATURES
Low voltage
Low Vce(sat) : 0.5V Max (Ic=2A, IB=0.05A)
D
D
K
F
F
DIM MILLIMETERS
A
B
C
D
E
F
4.70 MAX
MAXIMUM RATINGS (Ta=25℃unless otherwise noted)
_
+
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1
2
3
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
30
Unit
V
_
+
1.50 0.10
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
G
H
J
0.40 TYP
1.7 MAX
1. BASE
2. COLLECTOR
3. EMITTER
0.7 MIN
10
V
K
0.5+0.15/-0.10
6
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
2
A
SOT-89
PC
0.5
W
℃
℃
TJ
150
-55~150
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=1mA,IE=0
V(BR)CEO IC=10mA,IB=0
V(BR)EBO IE=1mA,IC=0
30
10
6
V
V
V
ICBO
IEBO
VCB=30V,IE=0
0.1
0.1
μA
μA
Emitter cut-off current
VEB=6V,IC=0
hFE(1)
hFE(2)
VCE(sat)
VBE
VCE=1V,IC=0.5A
VCE=1V,IC=2A
140
70
600
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
IC=2A,IB=50mA
VCE=1V,IC=2A
0.5
1.5
V
V
Transition frequency
fT
VCE=1V,IC=0.5A
VCB=10V,IE=0,f=1MHz
150
27
MHz
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE(1)
Rank
A
B
C
D
Range
Marking
140-240
SA
200-330
SB
300-450
SC
420-600
SD
2012.03.26
Revision No : 0
1/2
FTC4377
Typical Characteristics
2012. 03. 26
Revision No : 0
2/2
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