FTC4379O [FS]
TRANSISTOR (NPN);
| 型号： | FTC4379O |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | TRANSISTOR (NPN) |
| 文件： | 总3页 (文件大小：344K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FTC4379
TECHNICAL DATA
A
H
C
G
FTC4379
TRANSISTOR (NPN)
D
D
K
FEATURES
F
F
DIM MILLIMETERS
4.70 MAX
Complementary to FTA1666
A
_
+
B
C
D
E
F
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
Small Flat Package
1
2
3
Low Saturation Voltage
_
+
1.50 0.10
G
H
J
0.40 TYP
1.7 MAX
1. BASE
Power Amplifier and Switching Application
2. COLLECTOR
3. EMITTER
0.7 MIN
K
0.5+0.15/-0.10
SOT-89
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
Unit
V
50
50
Collector-Emitter Voltage
Emitter-Base Voltage
V
5
V
Collector Current
2
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
500
250
150
-55~+150
mW
℃/W
℃
RθJA
Tj
Tstg
Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
50
50
5
Typ
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= 1mA,I =0
V
V
E
IC=10mA,I B=0
IE= 1mA,IC=0
VCB=50V,I E=0
V
100
100
240
nA
nA
Emitter cut-off current
IEBO
VEB=5V,I =0
C
hFE(1)
*
*
VCE=2V, I = 500mA
70
40
C
DC current gain
hFE(2)
VCE=2V, I = 1.5A
C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
VCE(sat)
*
IC= 1A,IB= 50mA
0.5
1.2
40
V
V
VBE(sat)
*
IC= 1A,IB= 50mA
pF
Cob
fT
VCB=10V,I E=0, f=1MHz
V
MHz
uS
CE= 2V,IC= 500mA
120
0.1
20µS
Turn on time
OUTPUT
on
t
I
B2
B1
I
INPUT
B1
Switching Time
Storage time
Fall time
1.0
0.1
I
stg
t
I
B2
- I =I =0.05A
B2
B1
DUTY CYCLE 1%
f
t
V
CC
=- 30V
<
=
*Pulse test: pulse width ≤300mS, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE(1)
O
Y
RANK
RANGE
70–140
UO
120–240
UY
MARKING
2019. 09. 25
Revision No : 1
1/3
FTC4379
VCE
-
I C
VCE
-
I C
1.6
1.2
0.8
0.4
0
1.6
1.2
0.8
0.4
0
COMMON EMITTER
COMMON EMITTER
Ta=100℃
Ta=25℃
30
30
0
0.4
0.8
1.2
1.6
(A)
2.0
0
0.4
0.8
1.2
1.6
(A)
2.0
COLLECTOR CURRENT I
COLLECTOR CURRENT I
C
C
VCE
-
IC
h FE
- I C
1.6
1.2
0.8
0.4
0
1k
COMMON EMITTER
=2V
COMMON EMITTER
V
CE
500
300
Ta=- 55℃
Ta=100℃
Ta=25℃
100
Ta=- 55℃
50
30
0
4
50
10
0
0.4
0.8
1.2
1.6
(A)
2.0
10
30
100
300
1k
3k
COLLECTOR CURRENT I
COLLECTOR CURRENT I
(mA)
C
C
VCE(sat)
-
I C
VBE(sat)
- IC
1
10
COMMON EMITTER
/I =20
COMMON EMITTER
I /I =20
C
I
C
B
B
0.5
0.3
5
3
Ta=- 55℃
Ta=25℃
0.1
1
0.5
0.3
0.05
0.03
Ta=25℃
Ta=- 55℃
0.1
0.01
10
30
100
300
1k
3k
10
30
100
300
1k
(mA)
3k
COLLECTOR CURRENT I
(mA)
COLLECTOR CURRENT I
C
C
2019. 09. 25
Revision No : 1
2/3
FTC4379
I C
-
V BE
SAFE OPERATING AREA
5k
3k
1.0
0.8
0.6
0.4
0.2
0
I
MAX(PULSE)
*
C
COMMON EMITTER
I
MAX(CONTINUOUS)
C
V
=2V
CE
*
1k
*
*
500
300
*
100
Ta=25℃
Ta=- 55℃
50
30
SINGLE NONREPETITIVE
PULSE Ta=25℃
*
10
5
3
CURVES MUST BE DERATED
LINERALY WIHT INCREASE
IN TEMPERATURE
0.2 0.6
0.8
1.0
1.2
1.4
(V)
1.6
BASE- EMITTER VOLTAGE V
BE
1
0.1
0.3
1
3
10
30
100
COLLECTOR- EMITTER VOLTAGE V
CE
(V)
P C
- Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
1
MOUNTED ON CERAMIC
SUBSTRATE
(250mm x0.8t)
1
2
2
2
Ta=25℃
0
20
40
60
80
100 120 140 160
AMBIENT TEMPERATURE Ta ( ℃)
2019. 09. 25
Revision No : 1
3/3
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