FTC4617ST1 [FS]
General Purpose Transistors;
| 型号： | FTC4617ST1 |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | General Purpose Transistors |
| 文件： | 总3页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FTC4617
TECHNICAL DATA
General Purpose Transistors
NPN Silicon
We declare that the material of product compliance with RoHS requirements.
3
Absolute maximum ratings (Ta=25℃)
Parameter
Collector-base voltage
Symbol
Limits
60
Unit
V
1
V
CBO
CEO
EBO
2
V
50
V
Collector-emitter voltage
Emitter-base voltage
Collector current
V
7
V
SC-89
IC
0.15
A
COLLECTOR
3
Collector power
dissipation
P
C
0.15
W
Tj
150
C
C
Junction temperature
Storage temperature
1
Tstg
−
55~ +150
BASE
2
EMITTER
Electrical characteristics (Ta=25℃)
Parameter
Symbol
BVCBO
Min.
60
50
7
Typ. Max.
Unit
V
Conditions
−
−
−
−
I
C
=
50µA
1µA
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BV
CEO
V
IC
=
BVEBO
−
−
V
IE
=
50µA
I
CBO
EBO
CE(sat)
FE
−
−
0.1
0.1
0.5
560
−
µA
µA
V
V
CB
=
60V
I
−
−
V V
EB=7
Emitter cutoff current
V
−
−
IC
/IB
=
50mA/5mA
Collector-emitter saturation voltage
DC current transfer ratio
h
120
−
−
−
V
CE
CE
CB
=
=
=
6V, I 1mA
C=
fT
180
2.0
MHz
pF
V
12V, I
12V, I
E
E
=
2mA, f
=30MHz
Transition frequency
Cob
−
3.5
V
=
0A, f 1MHz
=
Output capacitance
Device marking
FTC4617QT1=BQ
FTC4617RT1=BR
FTC4617ST1=BS
h
FE values are classified as follows :
Item
Q
R
S
h
FE
120~270
180~390
270~560
ORDERING INFORMATION
Device
Marking
Shipping
FTC4617QT1
FTC4617QT3
BQ
BQ
BR
BR
BS
BS
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
FTC4617RT1
FTC4617RT3
FTC4617ST1
FTC4617ST3
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
2008. 4. 14
Revision No : 0
1/3
FTC4617
0 50mA
100
80
50
10
8
Ta=25 °C
30µA
27µA
24µA
21µA
V
CE=6V
Ta=25 °C
20
10
5
0 30mA
0 25mA
0 20mA
60
6
18µA
15µA
12µA
9µA
°C
2
1
100
0 15mA
0 10mA
0 05mA
=
40
4
Ta
0 5
6µA
20
0
2
0
3µA
0 2
0 1
B
I =0A
B
I =0A
0
0 4
0 8
1 2
1 6
2 0
0
0 2 0 4 0 6 0 8 1 0 1 2 1 4 1 6
0
4
8
12
16
20
COLLECTOR TO EMITTER VOLTAGE : V CE (V)
BASE TO EMITTER VOLTAGE : V BE (V)
COLLECTOR TO EMITTER VOLTAGE : V CE (V)
Fig.2 Grounded emitter output
Fig.3 Grounded emitter output
Fig.1 Grounded emitter propagation
characteristics
characteristics (Ι )
characteristics (ΙΙ )
500
500
0 5
Ta=25 °C
Ta=25 °C
V =
CE
5V
Ta=100 °C
0 2
25°C
V
CE=5V
3V
1V
200
100
50
200
100
50
−55°C
I
C
/I
B
=50
20
0 1
10
0 05
0 02
0 01
20
10
20
10
0 2 0 5
1
2
5
10 20 50 100 200
0 2 0 5
1
2
5
10 20 50 100 200
(mA)
0 2 0 5
1
2
5
10 20 50 100 200
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I
C
Fig.4 DC current gain vs.
Fig.5 DC current gain vs.
Fig. 6 Collector-emitter saturation
voltage vs. collector current
collector current ( Ι )
collector current (ΙΙ)
0 5
0 2
0 5
C B
I /I =10
IC/IB=50
Ta=25 °C
CE
V
=6V
500
Ta=100 °C
25°C
0 2
0 1
−55°C
Ta=100 °C
25°C
0 1
−55°C
200
0 05
0 05
0 02
0 01
100
50
0 02
0 01
0 2 0 5
1
2
5
10 20 50 100 200
(mA)
0 2
0 5
1
2
5
10
20
50 100
(mA)
−0 5 −1
−2
−5 −10 −20
−50 −100
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I
C
EMITTER CURRENT : I
E
(mA)
Fig.7 Collector-emitter saturation
Fig.8 Collector-emitter saturation
Fig.9 Gain bandwidth product vs.
emitter current
voltage vs. collector current (Ι)
voltage vs. collector current (ΙΙ)
20
Ta=25 °C
Ta=25 °C
Z
f=32MH
200
f
=
1MHz
=0A
CB
V
=6V
I
E
10
5
I
C
=0A
100
50
2
1
20
10
−0 2
−0 5
−1
−2
−5
(mA)
−10
0 2
0 5
1
2
5
10 20
50
EMITTER CURRENT : I
E
COLLECTOR TO BASE VOLTAGE : V CB (V)
EMITTER TO BASE VOLTAGE : V EB (V)
Fig.10 Collector output capacitance vs. Fig.11 Base-collector time constant
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
vs. emitter current
2008. 4. 14
Revision No : 0
2/3
FTC4617
SC-89
A
-X-
NOTES:
1
DIMENSIONING AND TOLERANCING PER ANSI
Y14 5M, 1982
2
3
CONTROLLING DIMENSION: MILLIMETERS
MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL
3
S
B
-Y-
1
2
4
463C-01 OBSOLETE, NEW STANDARD 463C-02
K
MILLIMETERS
DIM MIN NOM MAX MIN
INCHES
NOM MAX
G
2 PL
A
B
C
D
G
H
J
K
L
M
N
S
1 50
0 75
0 60
0 23
1 60
0 85
0 70
1 70
0 95
0 80
0 33
0 059 0 063
0 030 0 034
0 024 0 028
0 009 0 011
0 020 BSC
0 067
0 040
0 031
0 013
3 PL
D
M
0.08 (0.003) X Y
0 28
0 50 BSC
0 53 REF
0 15
0 40
1 10 REF
−−−
0 021 REF
0 10
0 30
0 20
0 50
0 004 0 006
0 012 0 016
0 043 REF
0 008
0 020
−−−
−−−
1 50
10
10
−−− −−−
10
10
0 067
N
M
−−−
−−− −−−
J
1 60
1 70
0 059 0 063
C
SEATING
PLANE
-T-
H
H
L
G
RECOMMENDED PATTERN
OF SOLDER PADS
2008. 4. 14
Revision No : 0
3/3
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