FTC9012SQ [FS]

General Purpose Transistors;
FTC9012SQ
型号: FTC9012SQ
厂家: First Silicon Co., Ltd    First Silicon Co., Ltd
描述:

General Purpose Transistors

文件: 总2页 (文件大小:102K)
中文:  中文翻译
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SEMICONDUCTOR  
FTC9012S  
TECHNICAL DATA  
X
General Purpose Transistors  
PNP Silicon  
FEATURE  
3
We declare that the material of product compliance with RoHS requirements.  
2
ORDERING INFORMATION  
1
Device  
Package  
SOT-23  
Shipping  
FTC9012SX  
FTC9012SX  
SOT– 23  
10000/Tape&Reel  
SOT-23  
3
COLLECTOR  
1
BASE  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
2
EMITTER  
Collector-Emitter Voltage  
VCEO  
VCBO  
VEBO  
IC  
20  
V
Collector-Base Voltage  
Emitter-Base Voltage  
40  
5
V
V
Collector current-continuoun  
500  
mAdc  
THERMAL CHARATEERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR-5 Board, (1)  
PD  
TA=25oC  
225  
mW  
Derate above 25oC  
1.8  
mW/oC  
oC/W  
Thermal Resistance, Junction to Ambient  
R θJA  
PD  
556  
Total Device Dissipation  
Alumina Substrate, (2) TA=25 oC  
Derate above 25oC  
300  
2.4  
mW  
mW/oC  
oC/W  
oC  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
R θJA  
417  
Tj ,Tstg  
-55 to +150  
FTC9012SP=12P FTC9012SQ=12Q FTC9012SR=12R FTC9012SS=12S  
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
(IC=1.0mA)  
V(BR)CEO  
V(BR)EBO  
V(BR)CBO  
20  
5
-
-
-
-
-
-
V
V
V
Emitter-Base Breakdown Voltage  
µ
(IE=100  
Collector-Base Breakdown Voltage  
A)  
40  
-
-
µ
(IC=100 A)  
Collector Cutoff Current (VCB=35V)  
Emitter Cutoff Current (VBE=4V)  
ICBO  
IEBO  
150  
150  
nA  
nA  
2011. 06. 03  
Revision No : 1  
1/2  
FTC9012S  
ON CHARACTERISTICS  
DC Current Gain  
(IC=50mA, VCE=1V)  
Hfe  
100  
-
-
-
600  
0.6  
Collector-Emitter Saturation Voltage  
(IC=500mA,IB=50mA)  
VCE(S)  
V
NOTE:  
*
P
Q
R
S
HFE  
100~200  
150~300 200~400 300~600  
SOT-23 (TO-236AB)  
A
L
NOTES:  
1. CONTROLLING DIMENSION: MILLIMETERS  
3
2. LEAD THICKNESS SPECIFIED PER L / F DRAWING WITH  
SOLDER PLATING.  
S
B
1
2
INCHES  
MIN MAX  
MILLIMETERS  
DIM  
A
B
C
D
G
H
J
MIN  
2.80  
1.20  
0.89  
0.37  
1.78  
0.013  
0.085  
0.45  
0.89  
2.10  
0.45  
MAX  
3.04  
1.40  
1.11  
0.50  
2.04  
0.100  
0.177  
0.60  
1.02  
2.50  
0.60  
V
G
0.1102 0.1197  
0.0472 0.0551  
0.0350 0.0440  
0.0150 0.0200  
0.0701 0.0807  
0.0005 0.0040  
0.0034 0.0070  
0.0180 0.0236  
0.0350 0.0401  
0.0830 0.0984  
0.0177 0.0236  
K
L
S
C
V
H
J
D
K
PIN 1. BASE  
2. EMITTER  
3. COLLECTOR  
0.037  
0 95  
0 037  
0.95  
0.079  
2.0  
0.035  
0.9  
0.031  
0.8  
inches  
mm  
2011. 06. 18  
Revision No : 1  
1/2  

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