FTC9012S [FS]

General Purpose Transistors;
FTC9012S
型号: FTC9012S
厂家: First Silicon Co., Ltd    First Silicon Co., Ltd
描述:

General Purpose Transistors

文件: 总2页 (文件大小:102K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SEMICONDUCTOR  
FTC9012S  
TECHNICAL DATA  
X
General Purpose Transistors  
PNP Silicon  
FEATURE  
3
We declare that the material of product compliance with RoHS requirements.  
2
ORDERING INFORMATION  
1
Device  
Package  
SOT-23  
Shipping  
FTC9012SX  
FTC9012SX  
SOT– 23  
10000/Tape&Reel  
SOT-23  
3
COLLECTOR  
1
BASE  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
2
EMITTER  
Collector-Emitter Voltage  
VCEO  
VCBO  
VEBO  
IC  
20  
V
Collector-Base Voltage  
Emitter-Base Voltage  
40  
5
V
V
Collector current-continuoun  
500  
mAdc  
THERMAL CHARATEERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR-5 Board, (1)  
PD  
TA=25oC  
225  
mW  
Derate above 25oC  
1.8  
mW/oC  
oC/W  
Thermal Resistance, Junction to Ambient  
R θJA  
PD  
556  
Total Device Dissipation  
Alumina Substrate, (2) TA=25 oC  
Derate above 25oC  
300  
2.4  
mW  
mW/oC  
oC/W  
oC  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
R θJA  
417  
Tj ,Tstg  
-55 to +150  
FTC9012SP=12P FTC9012SQ=12Q FTC9012SR=12R FTC9012SS=12S  
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
(IC=1.0mA)  
V(BR)CEO  
V(BR)EBO  
V(BR)CBO  
20  
5
-
-
-
-
-
-
V
V
V
Emitter-Base Breakdown Voltage  
µ
(IE=100  
Collector-Base Breakdown Voltage  
A)  
40  
-
-
µ
(IC=100 A)  
Collector Cutoff Current (VCB=35V)  
Emitter Cutoff Current (VBE=4V)  
ICBO  
IEBO  
150  
150  
nA  
nA  
2011. 06. 03  
Revision No : 1  
1/2  
FTC9012S  
ON CHARACTERISTICS  
DC Current Gain  
(IC=50mA, VCE=1V)  
Hfe  
100  
-
-
-
600  
0.6  
Collector-Emitter Saturation Voltage  
(IC=500mA,IB=50mA)  
VCE(S)  
V
NOTE:  
*
P
Q
R
S
HFE  
100~200  
150~300 200~400 300~600  
SOT-23 (TO-236AB)  
A
L
NOTES:  
1. CONTROLLING DIMENSION: MILLIMETERS  
3
2. LEAD THICKNESS SPECIFIED PER L / F DRAWING WITH  
SOLDER PLATING.  
S
B
1
2
INCHES  
MIN MAX  
MILLIMETERS  
DIM  
A
B
C
D
G
H
J
MIN  
2.80  
1.20  
0.89  
0.37  
1.78  
0.013  
0.085  
0.45  
0.89  
2.10  
0.45  
MAX  
3.04  
1.40  
1.11  
0.50  
2.04  
0.100  
0.177  
0.60  
1.02  
2.50  
0.60  
V
G
0.1102 0.1197  
0.0472 0.0551  
0.0350 0.0440  
0.0150 0.0200  
0.0701 0.0807  
0.0005 0.0040  
0.0034 0.0070  
0.0180 0.0236  
0.0350 0.0401  
0.0830 0.0984  
0.0177 0.0236  
K
L
S
C
V
H
J
D
K
PIN 1. BASE  
2. EMITTER  
3. COLLECTOR  
0.037  
0 95  
0 037  
0.95  
0.079  
2.0  
0.035  
0.9  
0.031  
0.8  
inches  
mm  
2011. 06. 18  
Revision No : 1  
1/2  

相关型号:

FTC9012SP

General Purpose Transistors
FS

FTC9012SQ

General Purpose Transistors
FS

FTC9012SR

General Purpose Transistors
FS

FTC9012SS

General Purpose Transistors
FS

FTC9012SX

General Purpose Transistors
FS

FTC9013

General Purpose Transistors
FS

FTC9013QLT1G

General Purpose Transistors
FS

FTC9013RLT1G

General Purpose Transistors
FS

FTC9013S

General Purpose Transistors
FS

FTC9013SLT1G

General Purpose Transistors
FS

FTC9013SQ

General Purpose Transistors
FS

FTC9013SR

General Purpose Transistors
FS