FTD1781KRLT1G [FS]
Medium Power Transistor;型号: | FTD1781KRLT1G |
厂家: | First Silicon Co., Ltd |
描述: | Medium Power Transistor |
文件: | 总4页 (文件大小:109K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FTD1781K
TECHNICAL DATA
Medium Power Transistor
(32V, 0.8A)
Features
3
CE(sat)
1) Very low V
.
VCE(sat)
0.4 V (Typ.)
2
C
B
(I / I = 500mA / 50mA)
2) High current capacity in compact
package.
1
SOT– 23
3) Complements the FTB1197K
4)
We declare that the material of product compliance with RoHS requirements.
Structure
Epitaxial planar type
NPN silicon transistor
COLLECTOR
3
Absolute maximum ratings (Ta = 25 C)
1
BASE
2
EMITTER
ORDERING INFORMATION
Device
Marking
Shipping
FTD1781KQLT1G
FTD1781KQLT3G
FTD1781KRLT1G
FTD1781KRLT3G
AFQ
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
AFQ
AFR
AFR
1/4
2007. 12. 18
Revision No : 0
FTD1781K
Electrical characteristics (Ta = 25 C)
hFE values are classified as follows:
ltem
hFE
Q
R
120~270
180~390
Electrical characteristic curves
2/4
2007. 12. 18
Revision No : 0
FTD1781K
3/4
2007. 12. 18
Revision No : 0
FTD1781K
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
L
2. CONTROLLING DIMENSION: INCH.
3
S
B
1
2
V
G
C
H
J
D
K
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2 0
0.035
0.9
0.031
0.8
inches
mm
4/4
2007. 12. 18
Revision No : 0
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