FTD1898R [FS]

TRANSISTOR (NPN);


型号：	FTD1898R
厂家：	First Silicon Co., Ltd
描述：	TRANSISTOR (NPN)
文件：	总2页 (文件大小：176K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SEMICONDUCTOR

FTD1898

TECHNICAL DATA

FTD1898

TRANSISTOR (NPN)

FEATURES

High Breakdown Voltage and Current

Excellent DC Current Gain Linearity

Complement the FTB1260

DIM MILLIMETERS

4.70 MAX

2.50 0.20

1.70 MAX

0.45+0.15/-0.10

4.25 MAX

Low Collector-Emitter Saturation Voltage

1.50 0.10

0.40 TYP

1.7 MAX

1. BASE

2. COLLECTOR

3. EMITTER

0.7 MIN

0.5+0.15/-0.10

SOT-89

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

100

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

500

℃/W

℃

R_θJA

T_j

250

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25 unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

100

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=50µA,I_E=0

I_C=1mA,I_B=0

I_E=50µA,I_C=0

V_CB=80V,I_E=0

µA

Emitter cut-off current

I_EBO

V_EB=4V,I_C=0

DC current gain

h_FE

V_CE=3V, I_C=500mA

I_C=500mA,I_B=20mA

VCE=10V,IC=50mA, f=100MHz

V_CB=10V, I_E=0, f=1MHz

390

0.4

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

100

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

RANK

RANGE

82–180

120–270

180–390

MARKING

2019. 12. 17

Revision No : 1

1/2

FTD1898

Electrical characteristic curves

10000

1000

1 2

1 0

0 8

0 6

0.4

1000

Ta=25°C

CE=5V

6mA

5mA

4mA

100

3mA

2mA

^CE=3V

100

1mA

0 2

=0mA

0.1

10 1000

100

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2 0

BASE TO EMITTER VOLTAGE : VBE (V)

COLLECTOR TO EMITTER VOLTAGE : V^CE

(

COLLECTOR CURRENT : I^C(mA)

Fig.2 Grounded emitter output

characteristics

Fig.3 DC current gain vs.

collector current

Fig.1 Grounded emitter propagation

characteristics

1000

500

1000

10 0

Ta=25°C

f=1MHz

Ta=25°C

V^CE=5V

IE=0A

Ic=0A

200

100

2 0

100

1 0

0 5

0 2

=20/1

0.1

10/1

0 05

0 02

0 01

10 20 50 100 200 5001000

100

1000

(mA)

0.1 0.2 0.5

10 20 50 100

EMITTER CURRENT : −I (mA)

COLLECTOR CURRENT : I

COLLECTOR TO BASE VOLTAGE : VCB

EMITTER TO BASE VOLTAGE : VEB

(

Fig.5 Gain bandwidth product vs.

emitter current

Fig.4 Collector-emitter saturation

voltage vs. collector current

Fig.6 Collector output capacitance vs.

collector-base voltage

Emitter input capacitance vs.

emitter-base voltage

Ta=25°C

Single

non- repetitive

pulse

Ic Max (Pulse)

500m

200m

100m

50m

20m

10m

0.1 0.2 0.5

10 20 50100200 5001000

COLLECTOR TO EMITTER VOLTAGE : V^CE

(V)

COLLECTOR CURRENT : IC (mA)

Fig.7 Safe operating area

Fig.8 DC current gain vs.

collector current

2019.12.17

Revision No : 1

2/2

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