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FTD2098R [FS]

Excellent DC current gain characteristics;
FTD2098R
型号： FTD2098R
厂家： First Silicon Co., Ltd    First Silicon Co., Ltd
描述：

Excellent DC current gain characteristics
文件： 总3页 (文件大小：245K)
中文：  中文翻译
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SEMICONDUCTOR  
FTD2098  
TECHNICAL DATA  
FTD2098 FEATURES  
A
H
C
Excellent DC current gain characteristics  
Complements the FTB1386  
G
D
D
MAXIMUM RATINGS (Ta=25 unless otherwise noted)  
℃
K
F
F
DIM MILLIMETERS  
4.70 MAX  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
50  
Unit  
V
A
_
+
B
C
D
E
F
2.50 0.20  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
1.70 MAX  
0.45+0.15/-0.10  
4.25 MAX  
1
2
3
20  
V
_
+
1.50 0.10  
G
H
J
0.40 TYP  
1.7 MAX  
1. BASE  
6
V
2. COLLECTOR  
3. EMITTER  
0.7 MIN  
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
5
A
K
0.5+0.15/-0.10  
PC  
500  
150  
-55~150  
mW  
TJ  
℃
℃
Tstg  
SOT-89  
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
Min  
50  
20  
6
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO IC=50μA,IE=0  
V(BR)CEO IC=1mA,IB=0  
V(BR)EBO IE=50μA, =0  
V
V
ICBO  
IEBO  
hFE  
VCB=40V,IE=0  
0.5  
0.5  
390  
1
μA  
μA  
Emitter cut-off current  
VEB=5V,IC=0  
DC current gain  
VCE=2V,IC=0.5A  
120  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat)  
fT  
IC=4A,IB=100mA  
VCE=6V,IC=50mA,f=100MHz  
VCB=20V,IE=0,f=1MHz  
V
150  
30  
MHz  
pF  
Collector output capacitance  
Cob  
CLASSIFICATION OF hFE  
Rank  
Q
R
Range  
120-270  
AHQ  
180-390  
AHR  
Marking  
2012. 01. 13  
Revision No : 0  
1/3  
 
FTD2098  
● Electrical characteristic curves  
5
5000  
10  
50mA  
45mA  
Ta=25°C  
Ta=25°C  
V
CE=2V  
30mA  
25mA  
20mA  
5
2000  
1000  
500  
2
1
Ta=100°C  
25°C  
4
3
2
15mA  
10mA  
−25°C  
VCE=5V  
0.5  
40mA  
0.2  
0.1  
35mA  
200  
100  
50  
2V  
1V  
0.05  
5mA  
0.02  
0.01  
5m  
20  
1
0
10  
5
2m  
1m  
0
IB  
=0mA  
1m 2m 5m0010020050.1 0.2 0.5 1  
2
5 10  
0.2 0.4 0 6 0.8 1 0  
1 2 1.4  
0
0.4  
0 8  
1 2  
1 6  
2.0  
COLLECTOR CURRENT : I  
C
(A)  
BASE TO EMITTER VOLTAGE : VBE (V)  
COLLECTOR TO EMITTER VOLTAGE : VCE (V)  
Fig.3 DC current gain vs.  
Fig.1 Grounded emitter propagation  
characteristics  
Fig.2 Grounded emitter output  
characteristics  
collector current ( Ι )  
5000  
5000  
2
V
CE=1V  
VCE=2V  
Ta=25°C  
2000  
1000  
500  
2000  
1000  
1
Ta=100°C  
25°C  
−25°C  
Ta=100°C  
25°C  
−25°C  
0.5  
500  
0.2  
0.1  
200  
100  
50  
200  
100  
50  
0.05  
I
C/I  
B=50  
20  
20  
40  
0.02  
0.01  
30  
10  
10  
5
10  
5
1m 2m 5m0010020050.10.2 0.5  
1
2
5
10  
1m 2m 5m001002 0050.10.2 0 5  
1
2
5 10  
2m 5m0.010.02 0.05 0.1 0.2 0.5  
1
2
5 10  
COLLECTOR CURRENT : I  
C
(A)  
COLLECTOR CURRENT : I (A)  
C
COLLECTOR CURRENT : I  
C
(A)  
Fig.4 DC current gain vs.  
Fig.5 DC current gain vs.  
Fig.6 Collector-emitter  
collector current ( ΙΙ )  
collector current ( ΙΙΙ )  
saturation voltage vs.  
collector current ( Ι )  
2
1
2
1
2
1
lC/lB=30  
lC  
/lB  
=40  
lC/lB  
=10  
0 5  
0 5  
0.5  
Ta=100°C  
25°C  
−25°C  
Ta=100°C  
25°C  
−25°C  
Ta=100°C  
25°C  
−25°C  
0 2  
0.1  
0 2  
0.1  
0.2  
0.1  
0 05  
0 05  
0.05  
0 02  
0 01  
0 02  
0 01  
0.02  
0.01  
2m 5m001002 005 0.1 0 2 0 5  
1
2
5 10  
2m 5m001002005 0.10 2 0 5  
1
2
5
10  
2m 5m001002005 0.1 0 2 0 5  
1
2
5
10  
COLLECTOR CURRENT : I (A)  
C
COLLECTOR CURRENT : I (A)  
C
COLLECTOR CURRENT : I (A)  
C
Fig.8 Collector-emitter  
Fig.9 Collector-emitter  
Fig.7 Collector-emitter  
saturation voltage vs.  
collector current ( ΙΙΙ )  
saturation voltage vs.  
collector current (IV)  
saturation voltage vs.  
collector current ( ΙΙ )  
2012. 01. 13  
Revision No : 0  
2/3  
FTD2098  
2
1000  
500  
1000  
500  
Ta=25°C  
lC/lB  
=50  
Ta=25°C  
f=1MHz  
VCE=6V  
1
I
I
C=0A  
E
=0A  
200  
100  
50  
0.5  
Ta=100°C  
25°C  
−25°C  
200  
100  
50  
Cib  
0.2  
0.1  
20  
10  
5
0.05  
Cob  
20  
10  
0.02  
0.01  
2
1
−1m −2m −5m−10m−20m −50m−0.1 −0.2 −0.5 −1  
2m 5m001002 005 0.1 0 2 0 5  
1
2
5
10  
0.1 0.2 0.5  
1
2
5
10 20  
50  
COLLECTOR CURRENT : I (A)  
C
EMITTER CURRENT : I (A)  
E
COLLECTOR TO BASE VOLTAGE : VCB (V)  
EMITTER TO BASE VOLTAGE : VEB (V)  
Fig.11 Gain bandwidth product vs.  
emitter current  
Fig.10 Collector-emitter  
Fig.12 Collector output capacitance vs.  
collector-base voltage  
saturation voltage vs.  
collector current (V)  
Emitter input capacitance vs.  
emitter-base voltage  
Ta=25(°C)  
50  
Single pulse  
Recommended land  
pattern  
20  
10  
5
Ic max (Pulse)  
2
1
500m  
200m  
100m  
50m  
20m  
10m  
0 2 0.5  
1
2
5 10 20 50100200 500  
COLLECTOR TO EMITTER VOLTAGE : VCE (V)  
Fig.13 Safe operating area  
2012. 01. 13  
Revision No : 0  
3/3  

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