FTK1N60D [FS]

1.0 Amps, 600 Volts N-CHANNEL MOSFET;


型号：	FTK1N60D
厂家：	First Silicon Co., Ltd
描述：	1.0 Amps, 600 Volts N-CHANNEL MOSFET
文件：	总7页 (文件大小：321K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SEMICONDUCTOR

FTK1N60P / F / D / I / S

TECHNICAL DATA

Power MOSFET

1.0 Amps, 600 Volts

N-CHANNEL MOSFET

I :

TO - 251

DESCRIPTION

The FTK 1N60 is a high voltage MOSFET and is designed to

have better characteristics, such as fast switching time, low gate

charge, low on-state resistance and have a high rugged avalanche

characteristics. This power MOSFET is usually used at high speed

switching applications in power supplies, PWM motor controls, high

efficient DC to DC converters and bridge circuits.

D :

TO - 252

P :

TO - 220

FEATURES

* R_DS(ON)= 9.6Ω@V_GS=10V

* Ultra Low gate charge (typical 5.0nC)

* Lowreverse transfer capacitance (C_RSS= typical 3.5 pF)

* Fast switching capability

F :

TO - 220F

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

S :

SOT-223

SYMBOL

2Drain

1.Gate

3Source

ORDERING INFORMATION

Pin Assignment

Ordering Number

Package

Packing

FTK1N60P

FTK1N60F

FTK1N60I

TO-220

TO-220F

TO-251

Tube

Tape Reel

FTK1N60D

FTK1N60S

TO-252

SOT-223

Note: Pin Assignment:

G: Gate

D: Drain S: Source

2017. 1. 28

Revision No : 0

1/7

FTK1N60P / F / D / I / S

Power MOSFET

ABSOLUTE MAXIMUM RATINGS

(

T_C= 25˚C, unless otherwise specified)

PARAMET

SYMBOL

V_DSS

RATINGS

UNIT

Drain-Source Voltage

600

±30

1.0

0.6

V_GSS

Gate-Source Voltage

I_AR

Avalanche Current (Note 2)

T_C= 25°C

Continuous Drain Current

Pulsed Drain Current (Note 2)

Avalanche Energy

I_D

T_C= 100°C

I_DM

E_AS

Single Pulse (Note 3)

Repetitive Limited by T_J(MAX)

E_AR

2.7

Peak Diode Recovery dv/dt (Note 4)

Power Dissipation

dv/dt

4.5

V/ns

T_C= 25°C

P_D

Derate above 25°C

0.21

W / ˚C

T_J

Junction Temperature

Operating Temperature

Storage Temperature

+150

˚C

T_OPR

T_STG

-55 ~ +150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

PACKAGE

TO-251

TO-252

TO-220

TO-251

TO-252

TO-220

SYMBOL

RATINGS

UNIT

112

Thermal Resistance Junction-Ambient

θ_JA

˚C / W

Thermal Resistance Junction-Case

θ_Jc

ELECTRICAL CHARACTERISTICS

(T_C= 25˚C , unless Otherwise specified.)

PARAMETER

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

BV_DSS

I_DSS

V_GS= 0V, I_D= 250µA

V_DS= 600V, V_GS= 0V

V_DS= 480V, T_C= 125°C

600

µA

Drain-Source Leakage Current

Gate-Source Leakage Current

_GS= 30V, V_DS= 0V

Forward

Reverse

100

I_GSS

V_GS= -30V, V_DS= 0V

-100

ΔBV_DSS/ ΔT_JI_D= 250µA

Breakdown Voltage Temperature Coefficient

ON CHARACTERISTICS

0.7

V / ˚C

V_GS(TH)

R_DS(ON)

V_DS= V_GS, I_D= 250µA

Gate Threshold Voltage

2.0

4.0

V_GS= 10V, I_D= 0.6A

9.6

12.0

Ω

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

C_ISS

Input Capacitance

160

C_OSS

C_RSS

V_DS=25V, V_GS=0V, f =1MHz

Output Capacitance

Reverse Transfer Capacitance

3.5

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Turn-On Rise Time

t_D(ON)

t_R

t_D(OFF)

t_F

V_DD= 300V, I_D= 1.0A,

Turn-Off Delay Time

Turn-Off Fall Time

R_G= 25Ω (Note 1,5)

Total Gate Charge

Q_G

5.0

1.2

2.0

V_DS=480V, V_GS=10V,

I_D= 1.0A

(Note 1,5)

Gate-Source Charge

Q_GS

Q_GD

Gate-Drain Charge

2017. 1. 28

Revision No : 0

2/7

FTK1N60P / F / D / I / S

Power MOSFET

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

V_SD

I_S

V_GS= 0 V, I_S= 1.0 A

Drain-Source Diode Forward Voltage

1.5

1.0

Maximum Continuous Drain-Source Diode

Forward Current

Maximum Pulsed Drain-Source Diode Forward

Current

I_SM

4.8

t_RR

V_GS= 0 V, I_S= 1.0A,

_F/dt =100 A/µs (Note 4)

Reverse Recovery Time

Reverse Recovery Charge

200

0.5

Q_RR

µC

Note:

1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%

2. Repetitive Rating : Pulse width limited by maximum junction temperature

3. L = 120mH, I_AS= 1.0A, V_DD= 50V, R_G= 25 Ω, Starting T_J= 25°C

4. I_SD≤ 1.0A, di/dt ≤ 300A/μs, V_DD≤ BV_DSS, Starting T_J= 25°C

5. Essentially independent of operating temperature

2017. 1. 28

Revision No : 0

3/7

FTK1N60P / F / D / I / S

Power MOSFET

TEST CIRCUITS AND WAVEFORMS

D.U.T.

V_DS

R_G

Driver

V_DD

* dv/dt controlled by R_G

* I_SDcontrolled by pulse period

* D.U.T.-Device Under Test

Same Type

as D.U.T.

V_GS

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

P. W.

Period

V_GS

(Driver)

Period

P.W.

10V

V_GS

I_FM, Body Diode Forward Current

I_SD

(D.U.T.)

di/dt

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_DS

V_DD

(D.U.T.)

Body Diode

Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

2017. 1. 28

Revision No : 0

4/7

FTK1N60P / F / D / I / S

Power MOSFET

TEST CIRCUITS AND WAVEFORMS (Cont.)

R_L

V_DS

90%

V_DD

V_GS

R_G

10%

V_GS

D.U.T.

10V

t_D(ON)

t_D(OFF)

Pulse Width ≤ 1μs

Duty Factor ≤ 0 1%

t_F

t_R

Fig. 2A Switching Test Circuit

Fig. 2B Switching Waveforms

Same Type

as D.U.T.

50kΩ

Q_G

12V

10V

0 3μF

0.2μF

V_DS

Q_GS

Q_GD

V_GS

DUT

V_GS

3mA

Charge

Fig. 3A Gate Charge Test Circuit

Fig. 3B Gate Charge Waveform

V_DS

BV_DSS

I_AS

R_G

V_DD

I_D(t)

V_DS(t)

V_DD

10V

D.U.T.

t_p

Time

t_p

Fig. 4A Unclamped Inductive Switching Test Circuit

Fig. 4B Unclamped Inductive Switching Waveforms

2017. 1. 28

Revision No : 0

5/7

FTK1N60P / F / D / I / S

Power MOSFET

TYPICAL CHARACTERISTICS

Output Characteristics

Transfer Characteristics

V_GS

Top: 15 0V

10 0V

*Notes:

1. V_DS=50V

2. 250μs Pulse Test

8 0V

7 0V

10⁰

10^-1

10^-2

6 5V

6 0V

Bottorm 5 5V

10⁰

125˚C

25˚C

-40˚C

*Notes:

1. 250μs Pulse Test

10^-1

2. T_C=25˚C

10^-1

10⁰

10¹

Gate-Source Voltage, V_GS(V)

Drain-Source Voltage, V_DS(V)

On-Resistance vs. Drain Current

Source-Drain Diode Forward Voltage

*Notes:

*Note: T_J=25˚C

1. V_GS=0V

2.250μs Pulse Test

V_GS=10V

V_GS=20V

10⁰

125˚C

25˚C

10^-1

0.0

0.5

1.0

1.5

2.0

2.5

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

Drain Current, I_D(A)

Source-Drain Voltage , V_SD(V)

Capacitance Characteristics

C_ISS

Gate Charge vs. Gate-Source Voltage

V_DS= 120V

200

150

100

=C_GS+C_GD

(C_DS=shorted)

_OSS=C_DS+C_GD

C_RSS=C_GD

C_ISS

V_DS= 300V

V_DS= 480V

C_OSS

C_RSS

*Notes:

1. V_GS=0V

2. f = 1MHz

*Notes: I_D= 1.2A

10^-1

10⁰

10¹

Drain-SourceVoltage , V_DS(V)

Total Gate Charge, Q_G(nC)

2017. 1. 28

Revision No : 0

6/7

FTK1N60P / F / D / I / S

Power MOSFET

TYPICAL PERFORMANCE CHARACTERISTICS(cont.)

Breakdown Voltage vs Temperature

*Notes:

1. V_GS= 0V

2. I_D= 250 μA

On-Resistance vs Temperature

*Notes:

1. V_GS= 10V

2. I_D= 0.6A

3.0

2.5

2.0

1.5

1.0

0.5

0.0

1.2

1.1

1.0

0.9

0.8

-100

-50

100

150

200

-100

-50

100

150

200

Junction Temperature, T_J( ˚C )

Max. Safe Operating Area

Max. Drain Current vs. Case Temperature

1.2

Operation in This Area is

Limited by R_DS(on)

10¹

0.9

0.6

0.3

0.0

100μs

1ms

10⁰

10ms

10^-1

T_c=25

T_J=150

Single Pulse

10^-2

10⁰

10¹

10³

100

125

10²

150

Drain-Source Voltage, V_DS(V)

Case Temperature, T_C( ˚C )

Thermal Response

D=0.5

10⁰

*Notes:

0.2

0.1

θ_JC(t) = 3.13 ˚C/W Max.

2. Duty Factor, D = t1/t2

3. T_JM-T_C= P_DMX θ_JC(t)

10^-1

P_DM

Single pulse

10^-3

10^-5

10^-4

10^-2

10^-1

10⁰

10¹

Square Wave Pulse Duration, t₁(sec)

2017. 1. 28

Revision No : 0

7/7

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