FTK1N60I [FS]
1.0 Amps, 600 Volts N-CHANNEL MOSFET;型号: | FTK1N60I |
厂家: | First Silicon Co., Ltd |
描述: | 1.0 Amps, 600 Volts N-CHANNEL MOSFET |
文件: | 总7页 (文件大小:321K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FTK1N60P / F / D / I / S
TECHNICAL DATA
Power MOSFET
1.0 Amps, 600 Volts
N-CHANNEL MOSFET
I :
1
TO - 251
DESCRIPTION
The FTK 1N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
D :
1
TO - 252
P :
1
TO - 220
FEATURES
* RDS(ON) = 9.6Ω@VGS =10V
* Ultra Low gate charge (typical 5.0nC)
* Lowreverse transfer capacitance (CRSS = typical 3.5 pF)
* Fast switching capability
F :
TO - 220F
1
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
S :
SOT-223
SYMBOL
1
2Drain
1.Gate
3Source
ORDERING INFORMATION
Pin Assignment
Ordering Number
Package
Packing
1
2
3
FTK1N60P
FTK1N60F
FTK1N60I
TO-220
TO-220F
TO-251
G
D
S
Tube
Tube
Tube
G
G
D
D
S
S
Tape Reel
Tape Reel
FTK1N60D
FTK1N60S
TO-252
G
G
D
D
S
S
SOT-223
Note: Pin Assignment:
G: Gate
D: Drain S: Source
2017. 1. 28
Revision No : 0
1/7
FTK1N60P / F / D / I / S
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(
TC = 25˚C, unless otherwise specified)
PARAMET
SYMBOL
VDSS
RATINGS
UNIT
V
Drain-Source Voltage
600
±30
1.0
1.0
0.6
4
VGSS
Gate-Source Voltage
V
IAR
Avalanche Current (Note 2)
A
TC = 25°C
A
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy
ID
TC = 100°C
IDM
EAS
A
Single Pulse (Note 3)
65
mJ
mJ
Repetitive Limited by TJ(MAX)
EAR
2.7
Peak Diode Recovery dv/dt (Note 4)
Power Dissipation
dv/dt
4.5
27
V/ns
W
TC = 25°C
PD
Derate above 25°C
0.21
W / ˚C
TJ
Junction Temperature
Operating Temperature
Storage Temperature
+150
˚C
˚C
˚C
TOPR
TSTG
-55 ~ +150
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
PACKAGE
TO-251
TO-252
TO-220
TO-251
TO-252
TO-220
SYMBOL
RATINGS
UNIT
112
112
54
12
12
4
Thermal Resistance Junction-Ambient
θJA
˚C / W
Thermal Resistance Junction-Case
θJc
ELECTRICAL CHARACTERISTICS
(TC = 25˚C , unless Otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
V
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
600
1
µA
µA
Drain-Source Leakage Current
Gate-Source Leakage Current
10
V
GS = 30V, VDS = 0V
Forward
Reverse
100
nA
nA
IGSS
VGS = -30V, VDS = 0V
-100
ΔBVDSS / ΔTJ ID = 250µA
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
0.7
V / ˚C
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250µA
Gate Threshold Voltage
2.0
4.0
V
VGS = 10V, ID = 0.6A
9.6
12.0
Ω
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
CISS
Input Capacitance
160
pF
COSS
CRSS
VDS=25V, VGS =0V, f =1MHz
Output Capacitance
25
pF
pF
Reverse Transfer Capacitance
3.5
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
tD(ON)
tR
tD(OFF)
tF
VDD = 300V, ID = 1.0A,
20
ns
Turn-Off Delay Time
Turn-Off Fall Time
RG = 25Ω (Note 1,5)
Total Gate Charge
QG
5.0
1.2
2.0
nC
nC
nC
VDS =480V, VGS =10V,
ID = 1.0A
(Note 1,5)
Gate-Source Charge
QGS
QGD
Gate-Drain Charge
2017. 1. 28
Revision No : 0
2/7
FTK1N60P / F / D / I / S
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
IS
VGS = 0 V, IS = 1.0 A
Drain-Source Diode Forward Voltage
1.5
1.0
V
A
Maximum Continuous Drain-Source Diode
Forward Current
Maximum Pulsed Drain-Source Diode Forward
Current
ISM
4.8
A
tRR
VGS = 0 V, IS = 1.0A,
F/dt =100 A/µs (Note 4)
Reverse Recovery Time
Reverse Recovery Charge
200
0.5
ns
QRR
dI
µC
Note:
1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 120mH, IAS = 1.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤ 1.0A, di/dt ≤ 300A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
5. Essentially independent of operating temperature
2017. 1. 28
Revision No : 0
3/7
FTK1N60P / F / D / I / S
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
2017. 1. 28
Revision No : 0
4/7
FTK1N60P / F / D / I / S
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
10%
VGS
D.U.T.
10V
tD(ON)
tD(OFF)
Pulse Width ≤ 1μs
Duty Factor ≤ 0 1%
tF
tR
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
as D.U.T.
50kΩ
QG
12V
10V
0 3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
VGS
3mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
IAS
RG
VDD
ID(t)
VDS(t)
VDD
10V
D.U.T.
tp
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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Revision No : 0
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FTK1N60P / F / D / I / S
Power MOSFET
TYPICAL CHARACTERISTICS
Output Characteristics
Transfer Characteristics
VGS
Top: 15 0V
10 0V
*Notes:
1. VDS=50V
2. 250μs Pulse Test
8 0V
7 0V
100
10-1
10-2
6 5V
6 0V
Bottorm 5 5V
100
125˚C
25˚C
-40˚C
*Notes:
1. 250μs Pulse Test
10-1
2. TC=25˚C
10-1
100
101
2
4
6
8
10
Gate-Source Voltage, VGS (V)
Drain-Source Voltage, VDS (V)
On-Resistance vs. Drain Current
Source-Drain Diode Forward Voltage
30
*Notes:
*Note: TJ =25˚C
1. VGS=0V
2.250μs Pulse Test
25
20
15
10
5
VGS=10V
VGS=20V
100
125˚C
25˚C
10-1
0
0.0
0.5
1.0
1.5
2.0
2.5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Drain Current, ID (A)
Source-Drain Voltage , VSD (V)
Capacitance Characteristics
CISS
Gate Charge vs. Gate-Source Voltage
VDS = 120V
12
10
8
200
150
100
50
=CGS+CGD
(CDS=shorted)
OSS=CDS+CGD
CRSS=CGD
C
CISS
VDS = 300V
VDS = 480V
COSS
6
4
CRSS
*Notes:
1. VGS=0V
2. f = 1MHz
2
*Notes: ID = 1.2A
0
0
10-1
100
101
0
1
2
3
4
5
Drain-SourceVoltage , VDS (V)
Total Gate Charge, QG (nC)
2017. 1. 28
Revision No : 0
6/7
FTK1N60P / F / D / I / S
Power MOSFET
TYPICAL PERFORMANCE CHARACTERISTICS(cont.)
Breakdown Voltage vs Temperature
*Notes:
1. VGS = 0V
2. ID = 250 μA
On-Resistance vs Temperature
*Notes:
1. VGS = 10V
2. ID = 0.6A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Junction Temperature, TJ ( ˚C )
Junction Temperature, TJ ( ˚C )
Max. Safe Operating Area
Max. Drain Current vs. Case Temperature
1.2
Operation in This Area is
Limited by RDS(on)
101
0.9
0.6
0.3
0.0
100μs
1ms
100
10ms
DC
10-1
Tc=25
TJ=150
Single Pulse
10-2
100
101
103
25
50
75
100
125
102
150
Drain-Source Voltage, VDS (V)
Case Temperature, TC ( ˚C )
Thermal Response
D=0.5
100
*Notes:
0.2
0.1
1.
θJC (t) = 3.13 ˚C/W Max.
2. Duty Factor, D = t1/t2
3. TJM -TC = PDM X θJC (t)
10-1
PDM
t1
t2
Single pulse
10-3
10-5
10-4
10-2
10-1
100
101
Square Wave Pulse Duration, t1 (sec)
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Revision No : 0
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