FTK2N60P [FS]
2 Amps, 600 Volts N-CHANNEL MOSFET;
| 型号： | FTK2N60P |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | 2 Amps, 600 Volts N-CHANNEL MOSFET |
| 文件： | 总7页 (文件大小：301K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FTK2N60P / F / D / I
TECHNICAL DATA
2 Amps, 600 Volts
N-CHANNEL MOSFET
I :
1
TO - 251
DESCRIPTION
The FTK 2N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
D :
P :
F :
1
TO - 252
TO - 220
1
FEATURES
* RDS(ON) = 3.8Ω@VGS =10V
* Ultra Low gate charge (typical 1.5nC)
* Lowreverse transfer capacitance (CRSS = typical 5.0 pF)
* Fast sw itching capability
1
TO - 220F
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2Drain
1.Gate
3Source
ORDERING INFORMATION
Pin Assignment
Ordering Number
FTK2N60P
Package
Packing
1
G
2
D
3
TO-220
TO-220F
TO-251
TO-252
S
S
S
S
Tube
Tube
Tube
G
G
G
D
D
D
FTK2N60F
FTK2N60I
FTK2N60D
Tape Reel
Note: Pin Assignment:
G: Gate
D: Drain S: Source
2011. 08. 25
Revision No : A
1/7
FTK2N60P / F / D / I
ABSOLUTE MAXIMUM RATINGS
(
TC = 25 , unless otherwise specified)
PARAMET
SYMBOL
VDSS
RATINGS
600
UNIT
V
Drain-Source Voltage
VGSS
IAR
Gate-Source Voltage
±30
2.0
V
A
Avalanche Current (Note 2)
TC = 25°C
2.0
1.2
A
A
Drain Current Continuous
Drain Current Pulsed (Note 2)
Avalanche Energy
ID
TC = 100°C
IDP
8.0
A
Repetitive(Note 2)
EAR
EAS
5.4
131
4.5
mJ
mJ
Single Pulse(Note 3)
Peak Diode Recovery
dv/dt
V/ns
TC = 25°C
45/45/62.5/31
0.36/0.36/0.5/0.25
+150
W
W / ˚C
˚C
Total Power Dissipation
(TO-251/252/TO-220/TO-220F)
PD
Derate above 25°C
TJ
Junction Temperature
Storage Temperature
TSTG
-55 ~ +150
˚C
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤ 2.0A, di/dt ≤ 300A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
PACKAGE
TO-251
TO-252
TO-220
TO-220F
TO-251
TO-252
TO-220
TO-220F
SYMBOL
RATINGS
UNIT
112
112
54
54
2.8
2.8
2
Thermal Resistance Junction-Ambient
θJA
˚C / W
Thermal Resistance Junction-Case
θJc
4
25
ELECTRICAL CHARACTERISTICS
(TJ
=
˚C , unless Otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
V
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
IGSS
VGS = 0V, ID = 250µA
600
VDS = 600V, VGS = 0V
VDS = 480V, T C = 125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
10
10
µA
µA
nA
nA
Forward
Reverse
100
-100
Gate-Body Leakage Current
Breakdown Voltage Temperature
Coefficient
BVDSS
TJ
/
ID = 250 µA
0.7
3.8
V / ˚C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS( TH)
VDS = VGS , ID = 250µA
4.0
5
V
2.0
Static Drain-Source On-Resistance
Ω
RDS(ON) VGS = 10V, ID =1A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
350
40
5
pF
pF
pF
VDS =25V, VGS =0V, f =1MHz
Output Capacitance
COSS
CRS S
Reverse Transfer Capacitance
2011. 08. 25
Revision No : A
2/7
FTK2N60P / F / D / I
(TJ
=
˚C ,
Otherwise specified.)
25
unless
ELECTRICAL CHARACTERISTICS
PARAMETER
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
tD (ON)
tR
tD(OFF)
tF
10
30
30
30
10
1.5
5
ns
ns
VDD =300V, ID =2.0A, RG=25Ω
(Note 1,2)
Turn-Off Delay Time
Fall Time
ns
ns
nC
nC
nC
Total Gate Charge
QG
VDS=480V, VGS =10V, ID=2.0A
(Note 1, 2)
Gate-Source Charge
Gate-Drain Charge
QGS
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS
V
VGS = 0 V, ISD = 2.0 A
Drain-Source Diode Forward Voltage
Continuous Drain-Source Current
Pulsed Drain-Source Current
Reverse Recovery Timee
VSD
1.5
A
ISD
ISM
tRR
2.0
8.0
A
ns
250
1.0
VGS = 0 V, ISD = 2.0A,
di/dt = 100 A/µs (Note1)
µC
Reverse Recovery Charge
QRR
Note: 1. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
2. Essentially Independent of Operating Temperature
2011. 08. 25
Revision No : A
3/7
FTK2N60P / F / D / I
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under TestP
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
Period
P. W.
VGS
(Driver)
D=
P.W.
Period
10V
=
VGS
I
FM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage DropVDD10VVDS
Fig. 1B Peak Diode Recovery dv/dt Waveforms
2011. 08. 25
Revision No : A
4/7
FTK2N60P / F / D / I
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
10%
VGS
D.U.T.
10V
tD(ON)
tD(OFF)
Pulse Width ≤ 1 μs
tF
tR
Duty Factor ≤ 0 1%
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
as D.U.T
50kΩ
QG
12V
10V
0.3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
VG
3mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
RD
VDD
10V
D.U.T.
tp
IAS
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
2011. 08. 25
Revision No : A
5/7
FTK2N60P / F / D / I
Power MOSFET
TYPICAL CHARACTERISTICS
On-Region Characteristics
Transfer Characteristics468
V
GS
VDS=50V
250 μs Pulse Test
Top 15.0 V
10 .0V
8 .0V
7 .0V
6 .5V
6 .0V
Bottorm
5.5V
100
85
25
100
-20
10-1
250 μs Pulse Test
TC=25
10-1
10-2
2
4
6
8
10
101
10-1
100
12Gate-Source Voltage, VGS(V)
Drain-Source Voltage, VDS(V)
On-Resistance Variation vs. Drain Current and
Gate Voltage
Body Diode Forward Voltage Variation vs.
Source Current and Temperature
12
10
8
VGS=0V
250 μs Pulse Test
TJ=25
VGS=10V
VGS=20V
100
6
4
125
25
2
0
10-1
0
2
3
4
5
6
1
0.2 0.4
0.6
0.8 1.0 1.2
1.4 1.6
Drain Current, ID(A)
Source-Drain Voltage, VSD(V)
Gate Charge vs. Gate Charge Voltage
VDS=120V
Capacitanc e vs. Drain-Source Voltag e
500
400
300
200
100
0
12
10
CISS =CGS+CGD
(CDS=shorted)
COSS =CDS+CGD
VDS=300V
VDS=480V
CRSS=CGD
CISS
COSS
8
6
4
CRSS
2
0
VGS=0V
f = 1MHz
ID=2.4A
10-1
100
101
2
0
4
6
8
1
0
Drain-SourceVoltage, VDS (V)
Total Gate Charge, QG(nC)
2011. 08. 25
Revision No : A
6/7
FTK2N60P / F / D / I
TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage vs Temperature
On-Resistance vs. Temperature
1.2
1.1
3.0
2.5
2.0
VGS=10V
ID=4.05A
VGS=10V
ID=250 μA
1.0
1.5
1. 0
0.9
0.8
0.5
0.0
-100 -50
0
50
100
150
200
200
-100 -50
0
50
100
150
Junction Temperature, TJ( C )
Junction Temperature, TJ( C )
Max. Safe Operating Area
Max. Drain Current vs. Case Temperature
2.0
Operation in This Area
is Limited by RDS(ON)
101
1.5
1.0
100μs
1ms
10ms
DC
100
10-1
10-2
0.5
0. 0
TC=25
TJ=125
Single Pulse
100
101
102
103
150
25
50
75
100
125
Case Temperature, TC(
C
)
Drain-Source Voltage, VDS(V)
Thermal Response (TO-220)
D=0.5
100
(t) = 2 78 /W Max
Duty Factor , D=t1/t2
JC
0.2
0.1
TJM -TC=PDM
×
(t)
JC
0.05
0.02
0.01
10-1
PDM
t1
t2
100
Single Pulse
10-5 10-4
10-3
10-2
10-1
101
Square Wave Pulse Duration, t1(s)
2011. 08. 25
Revision No : A
7/7
相关型号：
FTK400VB181M20X50FT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400V, 180uF, THROUGH HOLE MOUNT, RADIAL LEADED
CHEMI-CON
FTK400VB330M12X25FT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400V, 33uF, THROUGH HOLE MOUNT, RADIAL LEADED
CHEMI-CON
FTK400VB470M15.5X25FT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400V, 47uF, THROUGH HOLE MOUNT, RADIAL LEADED
CHEMI-CON
FTK400VB680M15.5X30FT
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 400V, 68uF, THROUGH HOLE MOUNT, RADIAL LEADED
CHEMI-CON
©2020 ICPDF网 联系我们和版权申明