FTK3N80P [FS]

3 Amps, 800 Volts N-CHANNEL MOSFET;


型号：	FTK3N80P
厂家：	First Silicon Co., Ltd
描述：	3 Amps, 800 Volts N-CHANNEL MOSFET
文件：	总6页 (文件大小：223K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SEMICONDUCTOR

FTK3N80P/F/D/I

TECHNICAL DATA

3 Amps, 800 Volts

Power MOSFET

N-CHANNEL MOSFET

I :

TO - 251

TO - 252

DESCRIPTION

The FTK 3N80 is a high voltage MOSFET and is designed to

have better characteristics, such as fast switching time, low gate

charge, low on-state resistance and have a high rugged avalanche

characteristics. This power MOSFET is usually used at high speed

switching applications in switching power supplies and adaptors.

D :

P :

F :

TO - 220

FEATURES

* R_DS(ON)= 5Ω@V_GS= 10V

* Low gate and reverse transfer Capacitance ( C: 16 pF typical )

* Fast switching capability

TO - 220F

* Avalanche energy tested

* Improved dv/dt capability, high ruggedness

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Pin Assignment

Ordering Number

FTK3N80P

Package

Packing

TO-220

TO-220F

TO-251

TO-252

Tube

FTK3N80F

FTK3N80I

FTK3N80D

Tape Reel

Note: Pin Assignment:

G: Gate

D: Drain S: Source

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Revision No : 0

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FTK3N80P/F/D/I

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (

=25˚C, unless otherwise specified)

PARAMET

SYMBOL

V_DSS

RATINGS

UNIT

Drain-Source Voltage

800

±30

7.4

V_GSS

Gate-Source Voltage

I_AR

Avalanche Current (Note 1)

T_C= 25°C

Continuous Drain Current

Pulsed Drain Current (Note 1)

Avalanche Energy

I_D

T_C= 100°C

1.8

I_DM

E_AS

Single Pulse(Note 2)

384

Repetitive Limited by T_J(MAX)

E_AR

4.5

Peak Diode Recovery dv/dt (Note 3)

dv/dt

V/ns

Total Power Dissipation

(TO-251/252/TO-220F/220)

T_C= 25°C

45/45/31/62.5

P_D

Derate above 25°C

W / ˚C

T_J

Junction Temperature

+150

˚C

T_STG

-55 ~ +150

Operating and Storage Temperature

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

Junction-to-Ambient

Junction-to-Case

SYMBOL

MIN

TYP

MAX

62.5

UNIT

θ_JA

˚C / W

θ_Jc

ELECTRICAL CHARACTERISTICS (T = 25˚C , unless Otherwise specified.)

PARAMETER

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

SYMBOL

TEST CONDITIONS

MIN TYP

800

MAX UNIT

BV_DSS

I_DSS

V_GS= 0V, I_D= 250µA

V_DS= 800V, V_GS= 0V

V_DS= 640V, T_C= 125°C

µA

Drain-Source Leakage Current

Gate-Body Leakage Current

I_GSSF

I_GSSR

V_GS= 30V, V_DS= 0V

Forward

Reverse

100

V_GS= -30V, V_DS= 0V

-100

I_D= 250µA, Referenced to

25°C

ΔBV_DSS/ ΔT_J

Breakdown Voltage Temperature Coefficient

0.9

4.0

V / ˚C

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS= V_GS, I_D= 250µA

V_GS= 10V, I_D= 1.5A

3.0

5.0

Static Drain-Source On-Resistance

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

C_ISS

C_OSS

C_RSS

600

V_DS= 25V, V_GS= 0V,

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Delay Time

t_D(ON)

t_R

t_D(OFF)

t_F

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

V_DD= 400V, I_D= 3A, R_G= 25Ω

(Note 4,5)

Q_G

V_DS= 640V,I_D= 3A, V_GS= 10V

(Note 4,5)

Q_GS

Q_GD

Gate-Drain Charge

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Revision No : 0

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FTK3N80P/F/D/I

Power MOSFET

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

V_SD

I_S

V_GS= 0 V, I_S= 3.0 A

Drain-Source Diode Forward Voltage

1.5

Maximum Continuous Drain-Source Diode

Forward Current

Maximum Pulsed Drain-Source Diode Forward

Current

I_SM

t_RR

V_GS= 0 V, I_S= 3.0A,

Reverse Recovery Time

700

7.0

Q_RR

d_IF/dt =100 A/µs (Note 4)

Reverse Recovery Charge

µC

Note:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 80mH, I_AS= 3A, V_DD= 50V, R_G= 25 Ω, Starting T_J= 25°C

3. I_SD≤ 3A, di/dt ≤ 300A/μs, V_DD≤ BV_DSS, Starting T_J= 25°C

4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

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FTK3N80P/F/D/I

Power MOSFET

D.U.T.

V_DS

R_G

Driver

V_DD

* dv/dt controlled by R

* I_SDcontrolled by pulse period

* D.U.T.-Device Under Test

Same Type

as D.U.T.

V_GS

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

Period

P. W.

V_GS

(Driver)

P.W.

Period

10V

V_GS

_FM, Body Diode Forward Current

I_SD

(D.U.T.)

di/dt

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_DS

(D.U.T.)

V_DD

Body Diode

Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

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FTK3N80P/F/D/I

Power MOSFET

TEST CIRCUITS AND WAVEFORMS (Cont.)

R_L

V_DS

90%

V_DD

V_GS

R_G

10%

V_GS

D.U.T.

10V

t_D(ON)

t_D(OFF)

Pulse Width ≤ 1μs

Duty Factor ≤ 0 1%

t_F

t_R

Fig. 2A Switching Test Circuit

Fig. 2B Switching Waveforms

Same Type

as D.U.T.

50kΩ

Q_G

12V

10V

0 3μF

0.2μF

V_DS

Q_GS

Q_GD

V_GS

DUT

V_G

3mA

Charge

Fig. 3A Gate Charge Test Circuit

Fig. 3B Gate Charge Waveform

V_DS

BV_DSS

R_D

V_DD

10V

D.U.T.

t_p

I_AS

Time

t_p

Fig. 4A Unclamped Inductive Switching Test Circuit

Fig. 4B Unclamped Inductive Switching Waveforms

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FTK3N80P/F/D/I

Power MOSFET

Transfer Characteristics

On-Region Characteristics

V_GS

Top: 15 0V

10 0V

10¹

10⁰

10^-1

10¹

10⁰

8 0V

7 0V

6 5V

6 0V

Bottorm 5 5V

-55˚C

150˚C

25˚C

*Notes:

1. 250μs Pulse Test

2. T_C=25˚C

1. V_DS=50V

2. 250μs Pulse Test

10^-1

10¹

10⁰

Drain-Source Voltage , V_DS(V)

Gate-Source Voltage, V_GS(V)

On-Resistance Variation vs. Drain Current

and Gate Voltage

Body Diode Forward Voltage Variation vs

Source Current and Temperature

2.5

2.0

10¹

V_GS=10V

V_GS=20V

1.5

1.0

0.5

10⁰

*Notes:

25˚C 1. V_GS=0V

150˚C

*Note: T_J=25˚C

2.250μs Pulse Test

10^-1

0.0

Drain Current, I_D(A)

0.2

0.4

1.2

0.6

0.8

1.0

Source-Drain Voltage , V_SD(V)

Capacitance Characteristics

C_iss

Maximum Safe Operating Area

2000

1800

1000

800

C_g+C_gd

10²

Operation in This Area

is Limited by R _DS(on)

(C_ds=shorted)

_oss=C_ds+C_gd

C_rss=C_gd

C_iss

100μs

1ms

10ms

10¹

10⁰

10^-1

C_oss

*Notes:

1. V_GS=0V

*Notes:

C_rss

1. T_C=25˚C

2. T_J=150˚C

3. Single Pulse

400

2. f = 1MHz

10⁰

10¹

10^-1

10⁰

10¹

10²

10³

Drain-SourceVoltage , V_DS(V)

Drain-Source Voltage , V_DS(V)

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