FTK4N65D [FS]

4 Amps, 650 Volt N-CHANNEL POWER MOSFET;


型号：	FTK4N65D
厂家：	First Silicon Co., Ltd
描述：	4 Amps, 650 Volt N-CHANNEL POWER MOSFET
文件：	总7页 (文件大小：387K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SEMICONDUCTOR

FTK4N65P/F/I/D

TECHNICAL DATA

4 Amps, 650 Volt

Power MOSFET

N-CHANNEL POWER MOSFET

I :

TO - 251

D :

DESCRIPTION

TO - 252

The FTK4N65 is a high voltage MOSFET and is designed to

have better characteristics, such as fast switching time, low gate

charge, low on-state resistance and have a high rugged avalanche

characteristics. This power MOSFET is usually used at high speed

switching applications in power supplies, PWM motor controls, high

efficient DC to DC converters and bridge circuits.

P :

TO - 220

F :

FEATURES

TO - 220F

* R_DS(ON)= 2.7Ω@V_GS= 10V

* Ultra low gate charge ( typical 12 nC )

* Low reverse transfer Capacitance ( C_RSS= typical 6.5 pF )

* Fast switching capability

* Avalanche energy Specified

* Improved dv/dt capability, high ruggedness

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Pin Assignment

Ordering Number

FTK4N65P

Package

Packing

TO-220

TO-220F

TO-251

TO-252

Tube

FTK4N65F

FTK4N65I

FTK4N65D

Tape Reel

Note: Pin Assignment:

G: Gate

D: Drain

S: Source

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Revision No : 0

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FTK4N65P/F/D/I

(T_C= 25˚C, unless otherwise specified)

ABSOLUTE MAXIMUM RATINGS

PARAMET

SYMBOL

V_DSS

RATINGS

UNIT

Drain-Source Voltage

Gate-Source Voltage

650

V_GSS

±30

I_AR

Avalanche Current (Note 1)

4.4

T_C= 25°C

3.6

Continuous Drain Current

Pulsed Drain Current (Note 1)

Avalanche Energy

I_D

T_C= 100°C

2.3

I_DM

E_AS

E_AR

dv/dt

P_D

Single Pulse(Note 2)

150

Repetitive Limited by T_J(MAX)

7.0

Peak Diode Recovery dv/dt (Note 3)

V/ns

4.5

Tc=25℃

45/45/31/62.5

0.36/0.36/0.25/0.5

+150

Total Power Dissipation

(TO-251/252/TO-220F/220)

Derate above 25°C

˚C

T_J

Junction Temperature

Operating Temperature

Storage Temperature

T_OPR

T_STG

˚C

-55 ~ +150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

(T_C= 25˚C , unless Otherwise specified.)

ELECTRICAL CHARACTERISTICS

PARAMETER

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

BV_DSS

I_DSS

V_GS= 0V, I_D= 250µA

V_DS= 600V, V_GS= 0V

V_DS= 480V, T_C= 125°C

650

µA

Drain-Source Leakage Current

Gate-Source Leakage Current

_GS= 30V, V_DS= 0V

Forward

Reverse

100

I_GSS

V_GS= -30V, V_DS= 0V

-100

I_D= 250µA, Referenced to

25°C

ΔBV_DSS/ ΔT_J

Breakdown Voltage Temperature Coefficient

0.7

1.9

V / ˚C

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

g_FS

V_DS= V_GS, I_D= 250µA

V_GS= 10V, I_D= 2.0A

2.0

4.0

2.7

Ω

Drain-Source On-State Resistance

V_DS= 50V, I_D= 2.0A (Note 4)

Forward Transconductance

DYNAMIC CHARACTERISTICS

Input Capacitance

C_ISS

C_OSS

C_RSS

510

V_DS= 25V, V_GS= 0V,

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Delay Time

6.5

t_D(ON)

t_R

t_D(OFF)

t_F

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

V_DD= 325V, I_D=3.6A, R = 25Ω

(Note 4,5)

2.5

Q_G

V_DS= 520V,I_D= 3.6A, V =10V

Q_GS

(Note 4,5)

Q_GD

Gate-Drain Charge

5.0

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Revision No : 0

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FTK4N65P/F/D/I

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

V_SD

I_S

V_GS= 0 V, I_S= 4.0 A

Drain-Source Diode Forward Voltage

1.4

3.6

Maximum Continuous Drain-Source Diode

Forward Current

Maximum Pulsed Drain-Source Diode Forward

Current

I_SM

14.4

t_RR

V_GS= 0 V, I_S= 4.0A,

d _F/dt =100 A/µs (Note 4)

Reverse Recovery Time

350

2.1

Q_RR

Reverse Recovery Charge

µC

Note:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 15mH, I_AS=3.6A, V_DD= 50V, R_G= 25 Ω, Starting T_J= 25°C

3. I_SD≤ 7A, di/dt ≤ 300A/μs, V_DD≤ BV_DSS, Starting T_J= 25°C

4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

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Revision No : 0

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FTK4N65P/F/D/I

TEST CIRCUITS AND WAVEFORMS

D.U.T.

V_DS

R_G

Driver

V_DD

* dv/dt controlled by R

* I_SDcontrolled by pulse period

* D.U.T.-Device Under Test

Same Type

as D.U.T.

V_GS

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

Period

P. W.

V_GS

(Driver)

P.W.

Period

10V

V_GS

_FM, Body Diode Forward Current

I_SD

(D.U.T.)

di/dt

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_DS

(D.U.T.)

V_DD

Body Diode

Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

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Revision No : 0

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FTK4N65P/F/D/I

TEST CIRCUITS AND WAVEFORMS (Cont.)

R_L

V_DS

90%

V_DD

V_GS

R_G

10%

V_GS

D.U.T.

10V

t_D(ON)

t_D(OFF)

Pulse Width ≤ 1μs

Duty Factor ≤ 0 1%

t_F

t_R

Fig. 2A Switching Test Circuit

Fig. 2B Switching Waveforms

Same Type

as D.U.T.

50kΩ

Q_G

12V

10V

0 3μF

0.2μF

V_DS

Q_GS

Q_GD

V_GS

DUT

V_G

3mA

Charge

Fig. 3A Gate Charge Test Circuit

Fig. 3B Gate Charge Waveform

V_DS

BV_DSS

R_D

V_DD

10V

D.U.T.

t_p

I_AS

Time

t_p

Fig. 4A Unclamped Inductive Switching Test Circuit

Fig. 4B Unclamped Inductive Switching Waveforms

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Revision No : 0

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FTK4N65P/F/D/I

TYPICAL CHARACTERISTICS

Fig1. I - V

Fig2. I - V

100

=25V

10¹

=10V, 7V

100 C

25 C

10⁰

=5V

10^-1

0.1

Drain - Source Voltage V_DS(V)

100

Gate - Source Voltage V_GS(V)

Fig3. BV

- T

Fig4. R

- I

DS(ON) D

DSS

1.2

1.1

1.0

0.9

0.8

6.0

5.0

4.0

3.0

2.0

1.0

V_GS= 0V

I_DS= 250

=7V

=10V

100

-100

-50

150

Junction Temperature Tj (

)

Drain Current I_D(A)

Fig6. R

- T

DS(ON)

Fig5. I - V

3.0

2.5

2.0

1.5

1.0

0.5

0.0

=10V

= 1.8A

10¹

10⁰

10^-1

150 C

25 C

-100

-50

100

150

0.2

0.4

0.6

0.8

1.0

1.2

1.4

(V)

Junction Temperature T (

)

Source - Drain Voltage V_SD

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FTK4N65P/F/D/I

TYPICAL CHARACTERISTICS(Cont.)

Fig 7. C - V

Fig8. Q - V

10⁴

10³

10²

10¹

10⁰

I_D=3 6A

= 520V

iss

oss

rss

(nC)

Gate - Charge

Drain - Source Voltage V_DS(V)

Fig10. Safe Operation Area

Fig9. Safe Operation Area

(FTK4N65P)

(FTK4N65F)

10¹

10⁰

10^-1

10^-2

10¹

10⁰

10^-1

10^-2

10µs

100µs

1ms

10ms

Operation in this

area is limited by R_DS(ON)

Operation in this

area is limited by R_DS(ON)

T = 25

T = 150

Single nonrepetitive pulse

10²

10³

10²

10³

10⁰

10¹

10⁰

10¹

Drain - Source Voltage V

(V)

Drain - Source Voltage V (V)

Fig11. I - T

100

125

150

Junction Temperature T

(

)

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Revision No : 0

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