FTK4N70D [FS]
4 Amps, 700 Volt N-CHANNEL POWER MOSFET;
| 型号： | FTK4N70D |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | 4 Amps, 700 Volt N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：403K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FTK4N70P/F/I/D
TECHNICAL DATA
4 Amps, 700 Volt
Power MOSFET
N-CHANNEL POWER MOSFET
I :
1
TO - 251
DESCRIPTION
D :
1
TO - 252
The FTK4N70 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
P :
1
TO - 220
F :
FEATURES
1
TO - 220F
* RDS(ON) = 2.7Ω@VGS = 10V
* Ultra low gate charge (typical 15 nC )
* Low reverse transfer Capacitance ( CRSS = typical 8.0 pF )
* Fast switching capability
* Avalanche energy Specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Pin Assignment
Ordering Number
FTK4N70P
Package
Packing
1
G
2
D
3
S
TO-220
TO-220F
TO-251
TO-252
Tube
Tube
Tube
G
G
G
D
D
D
S
S
S
FTK4N70F
FTK4N70I
FTK4N70D
Tape Reel
Note: Pin Assignment:
G: Gate
D: Drain
S: Source
2012. 12. 18
Revision No : 0
1/6
FTK4N70P/F/D/I
(TC= 25˚C, unless otherwise specified)
ABSOLUTE MAXIMUM RATINGS
PARAMET
SYMBOL
VDSS
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
700
VGSS
V
±30
IAR
Avalanche Current (Note 1)
A
4.4
TC = 25°C
4.0
2.5
A
Continuous Drain Current
Pulsed Drain Current (Note 1)
Avalanche Energy
ID
TC = 100°C
IDM
EAS
EAR
dv/dt
PD
A
16
Single Pulse(Note 2)
mJ
mJ
260
Repetitive Limited by TJ(MAX)
10.6
Peak Diode Recovery dv/dt (Note 3)
V/ns
W
4.5
Tc=25℃
45/45/31/62.5
0.36/0.36/0.25/0.5
+150
Total Power Dissipation
(TO-251/252/TO-220F/220)
W
Derate above 25°C
˚C
TJ
Junction Temperature
Operating Temperature
Storage Temperature
TOPR
TSTG
˚C
˚C
-55 ~ +150
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
(TC =25˚C, unless Otherwise specified.)
ELECTRICAL CHARACTERISTICS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
BVDSS
IDSS
VGS = 0V, ID = 250µA
700
V
VDS = 700V, VGS = 0V
10
µA
V
GS = 30V, VDS = 0V
Forward
Reverse
100
nA
nA
IGSS
Gate-Source Leakage Current
VGS = -30V, VDS = 0V
-100
ΔBVDSS / ΔTJ
I = 250µA, Referenced to 25°C
D
Breakdown Voltage Temperature Coefficient
0.6
1.9
V / ˚C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
gFS
VDS = VGS, ID = 250µA
VGS = 10V, ID = 2.0A
2.0
4.0
2.7
V
Ω
S
Drain-Source On-State Resistance
VDS = 50V, ID = 2.0A (Note 4)
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
520
70
8
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
13
ns
tR
tD(OFF)
tF
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
VDD = 350V, ID=4.0A, R = 25Ω
(Note 4,5)
45
25
35
15
3.4
ns
ns
G
ns
QG
nC
nC
VDS = 560V,ID = 4.0A, VGS =10V
(Note 4,5)
QGS
QGD
Gate-Drain Charge
7.1
nC
2012. 12. 18
Revision No : 0
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FTK4N70P/F/D/I
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
VSD
IS
VGS = 0 V, IS = 4.0 A
Drain-Source Diode Forward Voltage
1.4
4.4
V
A
Maximum Continuous Drain-Source Diode
Forward Current
Maximum Pulsed Drain-Source Diode Forward
Current
ISM
A
17.6
tRR
VGS = 0 V, IS = 4.0A,
d F/dt =100 A/µs (Note 4)
Reverse Recovery Time
Reverse Recovery Charge
250
1.5
ns
QRR
l
µC
Note:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD≤ 4.4A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
2012. 12. 18
Revision No : 0
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FTK4N70P/F/D/I
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by R
G
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
Period
P. W.
VGS
(Driver)
D=
P.W.
Period
10V
=
VGS
I
FM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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Revision No : 0
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FTK4N70P/F/D/I
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
10%
VGS
D.U.T.
10V
tD(ON)
tD(OFF)
Pulse Width ≤ 1μs
Duty Factor ≤ 0 1%
tF
tR
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
as D.U.T.
50kΩ
QG
12V
10V
0 3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
VG
3mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
RD
VDD
10V
D.U.T.
tp
IAS
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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FTK4N70P/F/D/I
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs.
Gate Threshold Voltage
300
250
200
150
100
50
300
250
200
150
100
50
0
0
0
200 400 600 800 1000 1200 1400
1
0
2
3
4
5
6
7
Drain-Source Breakdown Voltage, BVDSS(V)
Gate Threshold Voltage, VTH (V)
2012. 12. 18
Revision No : 0
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