FTK5N80P [FS]
5.0 Amps, 800 Volts N-Channel MOS -FET;
| 型号： | FTK5N80P |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | 5.0 Amps, 800 Volts N-Channel MOS -FET |
| 文件： | 总8页 (文件大小：622K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FTK5N80P/D/DD
TECHNICAL DATA
5.0 Amps, 800 Volts N-Channel MOS-FET
DESCRIPTION
These N-Channel enhancement mode power field effect
Transistors are produced using planar stripe, DMOS
technology.
P :
1
This advanced technology has been especially tailored
to minimize on - state resistance , provide superior
switching performance,and Withstand high energy pulse
in the avalanche and commutaion mode .These devices
are well suited for high efficiency switch mode power
TO-220
F :
supply electronic lamp ballasts
based on half bridge topology.
1
TO-220F
FEATURES
* RDS(ON) = 2.7Ω@VGS = 10V
* Fast switching capability
* Avalanche energy tested
DD :
1
* Improved dv/dt capability, high ruggedness
TO-263
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Pin Assignment
Order Number
Package
Packing
1
2
3
FTK5N80P
FTK5N80F
FTK5N80DD
TO-220
TO-220F
TO-263
G
D
S
Tube
Tube
G
G
D
D
S
S
Reel & Taping
Note: Pin Assignmen:
G: Gate
D: Drain
S: Source
2013. 01. 03
Revision No : 0
1/8
FTK5N80P/F/DD
ABSOLUTE MAXIMUM RATINGS (
T
C
=25˚C, unless otherwise specified)
PARAMET
SYMBOL
VDSS
RATINGS
UNIT
V
Drain-Source Voltage
800
±30
5.0
5.0
3.0
20
VGSS
Gate-Source Voltage
V
IAR
Avalanche Current (Note 1)
A
TC = 25°C
A
Continuous Drain Current
ID
TC = 100°C
Pulsed Drain Current (Note 1)
IDM
EAS
A
Avalanche Energy
Single Pulse(Note 2)
320
4.5
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
V/ns
W
TC = 25°C
142 / 48
1.14 / 0.38
+150
Power Dissipation (TO-220,TO-263/ TO-220F)
PD
Derate above 25°C
W / ˚C
TJ
Junction Temperature
˚C
˚C
TSTG
-55 ~ +150
Operating and Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
SYMBOL
MIN
TYP
MAX
62.5
1.0
UNIT
θJA
TO-220, TO-263
TO-220F
θJc
θJc
˚C / W
3.12
ELECTRICAL CHARACTERISTICS (T = 25˚C , unless Otherwise specified.)
C
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
V
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 800V, VGS = 0V
800
10
µA
Drain-Source Leakage Current
Gate-Body Leakage Current
IGSSF
IGSSR
VGS = 30V, VDS = 0V
Forward
100
nA
nA
VGS = -30V, VDS = 0V
Reverse
-100
ID = 250µA, Referenced to
25°C
ΔBVDSS / ΔTJ
Breakdown Voltage Temperature Coefficient
0.93
5.5
V / ˚C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
gFS
VDS = VGS, ID = 250µA
2.0
4.0
2.7
V
Ω
S
V
V
GS = 10V, I
DS = 40V, I
D
= 2.50A
Static Drain-Source On-Resistance
D
= 2.5A (Note 4)
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
1020
77
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
10.3
tD(ON)
50
ns
tR
tD(OFF)
tF
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
V
DD=400V, I
D
=2.5A, R
G
= 25Ω
85
120
30
ns
ns
(Note 4,5)
ns
QG
21
nC
nC
VDS = 640V,ID = 4A, VGS = 10V
(Note 4,5)
QGS
3.2
QGD
Gate-Drain Charge
78
nC
2013. 01. 03
Revision No : 0
2/8
FTK5N80P/F/DD
ELECTRICAL CHARACTERISTICS (T = 25˚C , unless Otherwise specified.)
C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
V
GS = 0 V, I =5.0A
S
Drain-Source Diode Forward Voltage
1.4
5.5
V
A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode Forward
Current
ISM
20
A
tRR
VGS = 0 V, IS = 5.0A,
Reverse Recovery Time
700
7.7
ns
QRR
dIF/dt =100 A/µs (Note 4)
Reverse Recovery Charge
µC
Notes:
1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area.
3. Starting TJ=25°C, ID=IAR, VDD=50V
4. Pulsed: Pulse duration=300μs, duty cycle 1.5%.
5. Essentially independent of operating temperature
2013. 01. 03
Revision No : 0
3/8
FTK5N80P/F/DD
7
6
5
4
3
2
1
0
VDS = 30V
Top VGS=15.0V
250 μs Pulse Test
10
10.0V
8.0V
7.0V
6.0V
5.0V
4.5V
Bottom 4.0V
150
℃
-55
℃
1
25℃
1. TC = 25
℃
2. 250μs Pulse Test
0.1
0
2
4
6
8
10
0
5
10
15
20
Gate-Source Voltage, VGS [V]
Drain-Source Voltage, VDS [V]
12
10
8
5
VGS = 0V
250μs Pulse Test
TJ = 25℃
4
3
2
1
VGS = 10V
150℃
VGS = 20V
6
25℃
4
2
0
0.0
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Source-Drain Voltage, VSD [V]
Drain Current,ID [A]
12
1600
1200
800
400
0
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
ID = 4A
Crss = Cgd
10
8
VDS = 160V
VDS = 400V
VGS = 0 V
f = 1 MHz
Ciss
6
VDS = 640V
Coss
4
2
Crss
0
100
101
0
5
10
15
20
25
Total Gate Charge, QG [nC]
Drain-Source Voltage, VDS [V]
2013. 01. 03
Revision No : 0
4/8
FTK5N80P/F/DD
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
3.0
VGS = 10 V
ID = 2 A
VGS = 0 V
ID = 250 μA
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
-80
-40
0
40
80
120
160
Junction Temperature,TJ [oC]
Junction Temperature, TJ [oC]
1.5
5
4
3
2
1
0
1.0
0.5
0.0
VGS = 10 V
ID = 250
�A
25
50
75
100
125
150
-80
-40
0
40
80
120
160
Case Temperature, TC [℃]
Junction Temperature, TJ [oC]
FTK5N80P
FTK5N80F
102
102
101
100
10-1
10-2
Operation in This Area
is Limited by R DS(on)
Operation in This Area
is Limited by R DS(on)
10 us
10 us
100 us
101
100
10-1
10-2
100 us
1 ms
1 ms
10 ms
10 ms
100 ms
100 ms
DC
DC
TC = 25 o
J = 150 o
Single Pulse
C
TC = 25 o
C
T
J = 150 o
C
T
C
Single Pulse
100
101
102
103
100
101
102
103
Drain-Source Voltage, VDS [V]
Drain-Source Voltage, VDS [V]
2013. 01. 03
Revision No : 0
5/8
FTK5N80P/F/DD
Fig11. Transient Thermal Response Curve
(FTK5N80P)
100
Duty=0.5
0 2
0.1
10-1
P
DM
t
1
t
2
- Rth(j-c) = 2.8 C/W Max.
- Duty Factor, D= t1/t2
Single Pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
TIME (sec)
Fig12. Transient Thermal Response Curve
(FTK5N80F)
100
Duty=0.5
0 2
10-1
P
DM
0.1
t
1
0.05
t
0.02
2
- Rth(j-c) = 2.8 C/W Max.
- Duty Factor, D= t1/t2
Single Pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
TIME (sec)
2013. 01. 03
Revision No : 0
6/8
FTK5N80P/F/DD
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by R
G
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
Period
P. W.
VGS
(Driver)
D=
P.W.
Period
10V
=
VGS
I
FM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
2013. 01. 03
Revision No : 0
7/8
FTK5N80P/F/DD
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
10%
VGS
D.U.T.
10V
tD(ON)
tD(OFF)
Pulse Width ≤ 1μs
Duty Factor ≤ 0 1%
tF
tR
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
as D.U.T.
50kΩ
QG
12V
10V
0 3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
VG
3mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
RD
VDD
10V
D.U.T.
tp
IAS
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
2013. 01. 03
Revision No : 0
8/8
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