FTK65T180DD [FS]

N-Channel Super Junction Power MOSFET;


型号：	FTK65T180DD
厂家：	First Silicon Co., Ltd
描述：	N-Channel Super Junction Power MOSFET
文件：	总9页 (文件大小：858K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SEMICONDUCTOR

FTK65T180/F/DD

TECHNICAL DATA

N-Channel Super Junction Power MOSFET

General Description

The series of devices use advanced trench gate super

junction technology and design to provide excellent R^DS(ON)

with low gate charge. This super junction MOSFET fits the

industry’s AC-DC SMPS requirements for PFC, AC/DC

power conversion, and industrial power applications.

V_DS

650

180

mΩ

R_{DS(ON) MAX}

I_D

Features

●New technology for high voltage device

●Low on-resistance and low conduction losses

●Small package

●Ultra Low Gate Charge cause lower driving requirements

●100% Avalanche Tested

●ROHS compliant

Application

● Power factor correction（PFC）

● Switched mode power supplies(SMPS)

● Uninterruptible Power Supply（UPS）

Schematic diagram

Package Marking And Ordering Information

Device

Device Package

Marking

FTK65T180

FTK65T180F

FTK65T180DD

TO-220

NCE65T180

NCE65T180F

NCE65T180

TO-220F

TO-263

TO-220

TO-220F

Table 1. Absolute Maximum Ratings (T_C=25℃)

FTK65T180

FTK65T180DD

Parameter

Symbol

Unit

FTK65T180F

650

Drain-Source Voltage (V^GS=0V）

V^DS

V^GS

±30

Gate-Source Voltage (V^DS=0V), AC (f>1 Hz)

Continuous Drain Current at T_C=25°C

Continuous Drain Current at T_C=100°C

13.2

21*

13.2*

84*

I_{D (DC)}

I_{DM (pluse)}

P_D

(Note 1)

Pulsed drain current

Maximum Power Dissipation(T_C=25°C)

188

1.5

33.8

0.27

Derate above 25°C

W/°C

(Note 2)

441

E^AS

I_AR

Single pulse avalanche energy

(Note 1)

10.5

Avalanche current

Repetitive Avalanche energy,t_ARlimited by T_Jmax

(Note 1)

0.7

E_AR

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Revision No : 0

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FTK65T180/F/DD

FTK65T180

FTK65T180DD

Parameter

Symbol

FTK65T180F

Unit

Drain Source voltage slope, V_DS≤ 480 V

Reverse diode dv/dt，V_DS≤ 480 V,I_SD<I_D

Operating Junction and Storage Temperature Range

* limited by maximum junction temperature

-55...+150

dv/dt

V/ns

°C

T_J,T_STG

Table 2. Thermal Characteristic

Parameter

FTK65T180

Symbol

Unit

FTK65T180F

FTK65T180DD

Thermal Resistance，Junction-to-Case（Maximum）

Thermal Resistance，Junction-to-Ambient （Maximum）

R_thJC

R_thJA

0.66

3.69

°C /W

62.5

Table 3. Electrical Characteristics (TA=25°C unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max Unit

On/off states

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current(Tc=25℃)

Zero Gate Voltage Drain Current(Tc=125℃)

Gate-Body Leakage Current

Gate Threshold Voltage

BV_DSS

I_DSS

V_GS=0V I_D=250μA

V_DS=650V,V_GS=0V

V_GS=±20V,V_DS=0V

V_DS=V_GS,I_D=250μA

V_GS=10V, I_D=10.5A

650

0.05

100

±100

μA

I_DSS

I_GSS

V_GS(th)

R_DS(ON)

3.5

Drain-Source On-State Resistance

Dynamic Characteristics

Forward Transconductance

Input Capacitance

150

180

mΩ

g_FS

C_lss

C_oss

C_rss

Q_g

V_DS= 20V, I_D= 10.5A

2250

_DS=50V,V_GS=0V,

F=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

1.6

_DS=480V,I_D=21A,

V_GS=10V

Gate-Source Charge

Q_gs

Q_gd

Gate-Drain Charge

8.5

Switching times

Turn-on Delay Time

t_d(on)

t_r

t_d(off)

t_f

Turn-on Rise Time

V_DD=380V,I_D=11A,

R_G=4Ω,V_GS=10V

Turn-Off Delay Time

4.5

Turn-Off Fall Time

Source- Drain Diode Characteristics

Source-drain current(Body Diode)

Pulsed Source-drain current(Body Diode)

Forward on voltage

I_SD

I_SDM

V_SD

t_rr

T_C=25°C

T_j=25°C,I_SD=21A,V_GS=0V

0.9

310

1.3

Reverse Recovery Time

Reverse Recovery Charge

Peak Reverse Recovery Current

Q_rr

T_j=25°C,I_F=21A,di/dt=100A/μs

I_rrm

Notes 1.^{Repetitive Rating: Pulse width limited by maximum junction temperature}

2. ^T_j^=25°C,V_DD=50V,V_G=10V, R_G=25Ω

2018. 10. 04

Revision No : 0

2/9

FTK65T180/F/DD

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)

Figure1. Safe operating area for TO-220/TO-263

Figure2. Safe operating area for TO-220F

Figure3. Source-Drain Diode Forward Voltage

Figure4. Output characteristics

Figure5. Transfer characteristics

Figure6. Static drain-source on resistance

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FTK65T180/F/DD

Figure7. R_DS(ON)vs Junction Temperature

Figure8. BV_DSSvs Junction Temperature

Figure9. Maximum I_Dvs Junction Temperature

Figure10. Transient Thermal Impedance for TO-220

Figure11. Transient Thermal Impedance for TO-220F

Figure12. Gate charge waveforms

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FTK65T180/F/DD

Figure13. Capacitance

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FTK65T180/F/DD

Test circuit

Gate charge test circuit & Waveform

2）Switch Time Test Circuit

3）Unclamped Inductive Switching Test Circuit & Waveforms

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Revision No : 0

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FTK65T180/F/DD

TO-220 Package Information

Dimensions In Millimeters

Min.

Dimensions In Inches

Min.

Symbol

Max.

4.600

2.550

0.910

1.370

0.650

1.400

10.250

9.750

12.950

Max.

0.181

0.100

0.036

0.054

0.026

0.055

0.404

0.384

0.510

4.400

2.250

0.710

1.170

0.330

1.200

9.910

8.9500

12.650

0.173

0.089

0.028

0.046

0.013

0.047

0.390

0.352

0.498

2.540 TYP.

0.100 TYP.

4.980

2.650

7.900

0.000

12.900

2.850

5.180

2.950

8.100

0.300

13.400

3.250

0.196

0.104

0.311

0.000

0.508

0.112

0.204

0.116

0.319

0.012

0.528

0.128

7.500 REF.

0.295 REF.

3.400

3.800

0.134

0.150

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FTK65T180/F/DD

TO-263 Package Information

Dimensions In Millimeters

Min.

Dimensions In Inches

Min.

Symbol

Max.

4.57

0.25

0.94

1.40

0.61

1.40

9.40

8.23

10.28

8.08

Max.

0.180

0.010

0.037

0.055

0.024

0.055

0.370

0.324

0.405

0.318

4.32

0.170

0.71

1.15

0.46

1.22

8.89

8.01

10.04

7.88

0.028

0.045

0.018

0.048

0.350

0.315

0.395

0.310

2.54 BSC

0.100 BSC

14.73

2.29

1.15

1.27

15.75

2.79

1.39

1.77

0.580

0.090

0.045

0.050

0.620

0.110

0.055

0.070

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FTK65T180/F/DD

TO-220F Package Information

Dimensions In Millimeters

Min.

Dimensions In Inches

Min.

Symbol

Max.

4.900

2.740

2.960

0.900

1.580

0.600

10.360

15.970

6.900

16.100

Max.

0.193

0.108

0.117

0.035

0.062

0.024

0.408

0.629

0.272

0.634

4.500

2.340

2.560

0.700

1.180

0.400

9.960

15.670

6.500

15.500

0.177

0.092

0.101

0.028

0.046

0.016

0.392

0.617

0.256

0.610

2.540 TYP

0.100 TYP

3.080

12.640

3.030

3.280

13.240

3.430

0.121

0.498

0.119

0.129

0.521

0.135

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