FTK65T360F [FS]

N-Channel Super Junction Power MOS FE T;


型号：	FTK65T360F
厂家：	First Silicon Co., Ltd
描述：	N-Channel Super Junction Power MOS FE T
文件：	总8页 (文件大小：1335K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SEMICONDUCTOR

FTK65T360DD/F/P

TECHNICAL DATA

N-ChannelSuper Junction Power MOSFET

General Description

The series of devices use advanced trench gate super

junction technology and design to provide excellent R^DS(ON)

with low gate charge. This super junction MOSFET fits the

industry’s AC-DC SMPS requirements for PFC, AC/DC

power conversion, and industrial power applications.

V_DS

650

300

mΩ

R_DS(ON)TYP

I_D

11.5

Features

● New technology for high voltage device

● Low on-resistance and low conduction losses

● Small package

● Ultra Low Gate Charge cause lower driving requirements

● 100% Avalanche Tested

● ROHS compliant

Application

●

Power factor correction（PFC）

Schematic diagram

Switched mode power supplies(SMPS)

Uninterruptible Power Supply（UPS）

Package Marking And Ordering Information

Device

Device Package

TO- 263

Marking

FTK65T360DD

FTK65T360P

FTK65T360F

NCE65T360D

NCE65T360

NCE65T360F

TO- 220

TO- 220F

TO-263

TO-220F

TO-220

Table 1. Absolute Maximum Ratings (T_C=25°C)

FTK65T360DD

FTK65T360P

Parameter

Symbol

Unit

FTK65T360F

650

Drain- Source Voltage (VGS=0V）

V^DS

V^GS

±30

Gate- Source Voltage (VDS=0V) AC (f>1 Hz)

ContinuousDrain Current at Tc=25℃

ContinuousDrain Current at Tc=100℃

11.5

11.5*

I_{D (DC)}

I_{DM (pluse)}

P_D

46*

(Note 1)

Pulsed drain current

Maximum Power Dissipation (Tc=25℃)

Derate above 25℃

101

0.81

32.6

0.26

W/°C

144

E^AS

I_AR

Single pulse avalanche energy

(Note 2)

Avalanche current

(Note 1)

Repetitive Avalanche energy ,tAR limited by Tjmax

(Note 1)

0.5

E_AR

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FTK65T360DD/F/P

Parameter

Symbol

dv/dt

Value

Unit

V/ns

°C

Drain Source voltage slope, V_DS≤ 480 V,

Reverse diode dv/dt，V_DS≤ 480 V,I_SD<I_D

dv/dt

Operating Junction and Storage Temperature Range

-55...+150

T_J,T_STG

* limited by maximum junction temperature

Table 2. Thermal Characteristic

FTK65T360DD

FTK65T360P

Parameter

Symbol

FTK65T360F

Unit

Thermal Resistance，Junction-to-Case（Maximum）

Thermal Resistance，Junction-to-Ambient （Maximum）

R_thJC

R_thJA

1.24

3.84

°C /W

Table 3. Electrical Characteristics (TA=25°C unless otherwise noted)

Parameter

Symbol

Condition

Min Typ Max

Unit

On/off states

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current (Tc=25°C)

Zero Gate Voltage Drain Current (Tc=125°C)

Gate-Body Leakage Current

Gate Threshold Voltage

BV_DSS

I_DSS

V_GS=0V I_D=250μA

V_DS=650V,V_GS=0V

V_GS=±20V,V_DS=0V

V_DS=V_GS,I_D=250μA

V_GS=10V, I_D=7.0A

650

μA

I_DSS

100

±100

I_GSS

V_GS(th)

R_DS(ON)

Drain-Source On-State Resistance

Dynamic Characteristics

Input Capacitance

300

360

mΩ

C_lss

C_oss

C_rss

Q_g

870

1.8

V_DS=50V,V_GS=0V,

F=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

V_DS=480V,I_D=11.5A

Gate-Source Charge

Q_gs

Q_gd

V_GS=10V

Gate-Drain Charge

6.5

Switching times

Turn-on Delay Time

t_d(on)

t_r

t_d(off)

t_f

Turn-on Rise Time

_DD=380V,I_D=5.5A,

R_G=3.0Ω,V_GS=10V

Turn-Off Delay Time

Turn-Off Fall Time

Source- Drain Diode Characteristics

Source-drain current(Body Diode)

Pulsed Source-drain current(Body Diode)

Forward On Voltage

I_SD

I_SDM

V_SD

t_rr

11.5

T_C=25°C

Tj=25°C,I^SD=11.5A,VGS=0V

0.9

220

2.2

1.2

Reverse Recovery Time

Reverse Recovery Charge

Peak Reverse Recovery Current

Q_rr

Tj=25°C,I_F=5.8A,di/dt=100A/μs

I_rrm

Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature

2. Tj=25°C,VDD=50V,VG=10V, R =25Ω

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FTK65T360DD/F/P

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)

Figure2. Safe operating area for TO-220F

Figure1. Safe operating area

Figure3. Source-Drain Diode Forward Voltage

Figure4. Output characteristics

Figure5. Transfer characteristics

Figure6. Static drain-source on resistance

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FTK65T360DD/F/P

Figure 7. RDS(ON) vs Junction Temperature

Figure 8. BVDSS vs Junction Temperature

Figure 9. Maximum I^Dvs Junction Temperature

Figure 10. Gate charge waveforms

Figure 11. Capacitance

Figure 12. Transient Thermal Impedance

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FTK65T360DD/F/P

Figure 13. Transient Thermal Impedance for TO-220F

Test circuit

Gate charge test circuit & Waveform

2）Switch Time Test Circu：it

3）Unclamped Inductive Switching Test Circuit & Waveforms

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FTK65T360DD/F/P

TO-263-3L Package Information

Dimensions In Millimeters

Symbol

Dimensions In Inches

Min.

4.32

Max.

4.57

0.25

0.94

1.40

0.61

1.40

9.40

8.23

10.28

8.08

Min.

Max.

0.170

0.180

0.010

0.037

0.055

0.024

0.055

0.370

0.324

0.405

0.318

0.71

1.15

0.46

1.22

8.89

8.01

10.04

7.88

0.028

0.045

0.018

0.048

0.350

0.315

0.395

0.310

2.54 BSC

0.100 BSC

14.73

2.29

1.15

1.27

15.75

2.79

1.39

1.77

0.580

0.090

0.045

0.050

0.620

0.110

0.055

0.070

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FTK65T360DD/F/P

TO-220-3L-C Package Information

Dimensions In Millimeters

Min.

Dimensions In Inches

Min.

Symbol

Max.

4.600

2.550

0.910

1.370

0.650

1.400

10.250

9.750

12.950

Max.

0.181

0.100

0.036

0.054

0.026

0.055

0.404

0.384

0.510

4.400

2.250

0.710

1.170

0.330

1.200

9.910

8.9500

12.650

0.173

0.089

0.028

0.046

0.013

0.047

0.390

0.352

0.498

2.540 TYP.

0.100 TYP.

4.980

2.650

7.900

0.000

12.900

2.850

5.180

2.950

8.100

0.300

13.400

3.250

0.196

0.104

0.311

0.000

0.508

0.112

0.204

0.116

0.319

0.012

0.528

0.128

7.500 REF.

0.295 REF.

3.400

3.800

0.134

0.150

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FTK65T360DD/F/P

TO-220F Package Information

Symbol

Dimensions In Millimeters

Min.

Dimensions In Inches

Min.

Max.

4.900

2.740

2.960

0.900

1.580

0.600

10.360

15.970

6.900

16.100

Max.

0.193

0.108

0.117

0.035

0.062

0.024

0.408

0.629

0.272

0.634

4.500

2.340

2.560

0.700

1.180

0.400

9.960

15.670

6.500

15.500

0.177

0.092

0.101

0.028

0.046

0.016

0.392

0.617

0.256

0.610

2.540 TYP

0.100 TYP

3.080

12.640

3.030

3.280

13.240

3.430

0.121

0.498

0.119

0.129

0.521

0.135

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