FTK65T680P [FS]

N-Channel Super Junction Power MOSFET;


型号：	FTK65T680P
厂家：	First Silicon Co., Ltd
描述：	N-Channel Super Junction Power MOSFET
文件：	总9页 (文件大小：1023K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SEMICONDUCTOR

FTK65T680DD/P/F

TECHNICAL DATA

N-ChannelSuper Junction Power MOSFET

General Description

The series of devices use advanced trench gate super

junction technology and design to provide excellent R^DS(ON)

with low gate charge. This super junction MOSFET fits the

industry’s AC-DC SMPS requirements for PFC, AC/DC

power conversion, and industrial power applications.

V_DS

650

600

mΩ

R_DS(ON)TYP

I_D

Features

● New technology for high voltage device

● Low on-resistance and low conduction losses

● Small package

● Ultra Low Gate Charge cause lower driving requirements

● 100% Avalanche Tested

● ROHS compliant

Application

● Power factor correction(PFC)

● Switched mode power supplies(SMPS)

● Uninterruptible Power Supply(UPS)

Schematic diagram

Package Marking And Ordering Information

Device

Device Package

Marking

FTK65T680DD

FTK65T680P

FTK65T680F

TO-263

NCE65T680D

NCE65T680

NCE65T680F

TO-220

TO-220F

TO-263

TO-220F

TO-220

Table 1. Absolute Maximum Ratings (T_C=25°C)

Parameter

FTK65T680DD

FTK65T680P

Symbol

FTK65T680F

Unit

650

Drain-Source Voltage (V^GS=0V）

V^DS

V^GS

± 30

Gate-Source Voltage (V^DS=0V) AC (f>1 Hz)

Continuous Drain Current at Tc=25°C

Continuous Drain Current at Tc=100°C

4.5

I_{D (DC)}

I_{DM (pluse)}

4.5*

28*

(Note1)

Pulsed drain current

Maximum Power Dissipation (Tc=25°C)

31.4

0.25

P_D

Derate above 25°C

0.48

W/°C

(Note 2)

101

E^AS

I_AR

Single pulse avalanche energy

(Note 1)

1.5

Avalanche current

Repetitive Avalanche energy，t_ARlimited by T _jmax

(Note 1)

0.28

E_AR

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FTK65T680DD/P/F

FTK65T680DD

FTK65T680P

Parameter

Symbol

Unit

FTK65T680F

Drain Source voltage slope, V_DS≤ 480 V,

Reverse diode dv/dt，V_DS≤ 480 V,I_SD<I_D

Operating Junction and Storage Temperature Range

* limited by maximum junction temperature

dv/dt

V/ns

°C

-55...+150

T_J,T_STG

Table 2. Thermal Characteristic

Parameter

FTK65T680DD

FTK65T680P

Symbol

Unit

FTK65T680F

Thermal Resistance，Junction-to-Case (Maximum）

R_thJC

R_thJA

2.08

3.98

°C /W

Thermal Resistance, Junction-to-Ambient (Maximum)

Table 3. Electrical Characteristics (TA=25°C unless otherwise noted)

Parameter

Symbol

Condition

Min Typ Max

Unit

On/off states

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current(Tc=25°C)

Zero Gate Voltage Drain Current(Tc=125°C)

Gate-Body Leakage Current

Gate Threshold Voltage

BV_DSS

I_DSS

V_GS=0V I_D=250μA

V_DS=650V,V_GS=0V

V_GS=±20V,V_DS=0V

V_DS=V_GS,I_D=250μA

V_GS=10V, I_D=3.5A

650

μA

I_DSS

100

±100

I_GSS

V_GS(th)

R_DS(ON)

Drain-Source On-State Resistance

Dynamic Characteristics

Input Capacitance

600

680

mΩ

C_lss

C_oss

C_rss

Q_g

435

3.3

3.5

_DS=50V,V_GS=0V,

F=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

V_DS=480V,I_D=7A,

Gate-Source Charge

Q_gs

Q_gd

V_GS=10V

Gate-Drain Charge

Switching times

Turn-on Delay Time

t_d(on)

t_r

t_d(off)

t_f

Turn-on Rise Time

_DD=380V,I_D=3.5A,

R_G=4.7Ω,V_GS=10V

Turn-Off Delay Time

Turn-Off Fall Time

Source- Drain Diode Characteristics

Source-drain current(Body Diode)

Pulsed Source-drain current(Body Diode)

Forward On Voltage

I_SD

I_SDM

V_SD

t_rr

T_C=25°C

1.2

Tj=25°C,I_SD=7A,V_GS=0V

0.9

210

0.85

Reverse Recovery Time

Reverse Recovery Charge

Peak Reverse Recovery Current

Q_rr

Tj=25°C,I_F=3.5A,di/dt=100A/μs

I_rrm

Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature

2. Tj=25°C,VDD=50V,VG=10V, R_G=25Ω

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FTK65T680DD/P/F

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)

Figure1. Safe operating area

Figure2. Safe operating area for TO-220F

Figure3. Source-Drain Diode Forward Voltage

Figure4. Output characteristics

Figure5. Transfer characteristics

Figure6. Static drain-source on resistance

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FTK65T680DD/P/F

Figure7. R_DS(ON)vs Junction Temperature

Figure8. BV_DSSvs Junction Temperature

Figure9. Maximum I_Dvs Junction Temperature

Figure10. Capacitance

Figure11. Gate charge waveforms

Figure12. Transient Thermal Impedance

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FTK65T680DD/P/F

Figure13. Transient Thermal Impedance for TO-220F

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FTK65T680DD/P/F

Test circuit

Gate charge test circuit & Waveform

2）Switch Time Test Circuit

3）Unclamped Inductive Switching Test Circuit & Waveforms

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FTK65T680DD/P/F

TO-263 Package Information

Dimensions In Millimeters

Min.

Dimensions In Inches

Min.

Symbol

Max.

4.57

0.25

0.94

1.40

0.61

1.40

9.40

8.23

10.28

8.08

Max.

0.180

0.010

0.037

0.055

0.024

0.055

0.370

0.324

0.405

0.318

4.32

0.170

0.71

1.15

0.46

1.22

8.89

8.01

10.04

7.88

0.028

0.045

0.018

0.048

0.350

0.315

0.395

0.310

2.54 BSC

0.100 BSC

14.73

2.29

1.15

1.27

15.75

2.79

1.39

1.77

0.580

0.090

0.045

0.050

0.620

0.110

0.055

0.070

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FTK65T680DD/P/F

TO-220 Package Information

Dimensions In Millimeters

Min.

Dimensions In Inches

Min.

Symbol

Max.

4.600

2.550

0.910

1.370

0.650

1.400

10.250

9.750

12.950

Max.

0.181

0.100

0.036

0.054

0.026

0.055

0.404

0.384

0.510

4.400

2.250

0.710

1.170

0.330

1.200

9.910

8.9500

12.650

0.173

0.089

0.028

0.046

0.013

0.047

0.390

0.352

0.498

2.540 TYP.

0.100 TYP.

4.980

2.650

7.900

0.000

12.900

2.850

5.180

2.950

8.100

0.300

13.400

3.250

0.196

0.104

0.311

0.000

0.508

0.112

0.204

0.116

0.319

0.012

0.528

0.128

7.500 REF.

0.295 REF.

3.400

3.800

0.134

0.150

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FTK65T680DD/P/F

TO-220F Package Information

Dimensions In Millimeters

Min.

Dimensions In Inches

Min.

Symbol

Max.

4.900

2.740

2.960

0.900

1.580

0.600

10.360

15.970

6.900

16.100

Max.

0.193

0.108

0.117

0.035

0.062

0.024

0.408

0.629

0.272

0.634

4.500

2.340

2.560

0.700

1.180

0.400

9.960

15.670

6.500

15.500

0.177

0.092

0.101

0.028

0.046

0.016

0.392

0.617

0.256

0.610

2.540 TYP

0.100 TYP

3.080

12.640

3.030

3.280

13.240

3.430

0.121

0.498

0.119

0.129

0.521

0.135

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