FTK7N65F [FS]

7.0 Amps, 650 Volts N-CHANNEL MOSFET;


型号：	FTK7N65F
厂家：	First Silicon Co., Ltd
描述：	7.0 Amps, 650 Volts N-CHANNEL MOSFET
文件：	总7页 (文件大小：615K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SEMICONDUCTOR

FTK7N65D/I/P/F/DD

TECHNICAL DATA

7.0 Amps, 650 Volts

N-CHANNEL MOSFET

DESCRIPTION

These N-Channel enhancement mode power field effect

Transistors are produced using planar stripe, DMOS

technology.

This advanced technology has been especially tailored

to minimize on - state resistance , provide superior

switching performance,and Withstand high energy pulse

in the avalanche and commutaion mode .These devices

are well suited for high efficiency switch mode power

supply electronic lamp ballasts

I :

TO - 251

D :

P :

F :

TO - 252

TO - 220

based on half bridge topology.

FEATURES

* R_DS(ON)= 1.4Ω@V_GS= 10V

* Low gate and reverse transfer Capacitance ( C: 12 pF typical )

* Fast switching capability

* Avalanche energy tested

* Improved dv/dt capability, high ruggedness

TO - 220F

SYMBOL

2.Drain

DD :

TO-263

1.Gate

3.Source

ORDERING INFORMATION

Pin Assignment

Ordering Number

Package

Packing

FTK7N65P

FTK7N65F

FTK7N65I

FTK7N65D

TO-220

TO-220F

TO-251

TO-252

Tube

Tape Reel

FTK7N65DD

TO-263

Note: Pin Assignment:

G: Gate

D: Drain S: Source

2017. 01. 02

Revision No : 1

1/7

FTK7N65D/I/P/F/DD

(

T_C= 25˚C, unless otherwise specified)

ABSOLUTE MAXIMUM RATINGS

PARAMET

SYMBOL

V_DSS

RATINGS

650

UNIT

Drain-Source Voltage

V_GSS

Gate-Source Voltage

±30

I_AR

Avalanche Current (Note 1)

7.0

T_C= 25°C

7.0

Continuous Drain Current

Pulsed Drain Current (Note 1)

Avalanche Energy

I_D

T_C= 100°C

4.2

I_DM

E_AS

Single Pulse(Note 2)

230

14.7

4.5

Repetitive Limited by T_J(MAX)

E_AR

Peak Diode Recovery dv/dt (Note 3)

dv/dt

V/ns

T_C= 25°C

142 / 48

1.14 / 0.38

+150

Power Dissipation (TO-220,TO-263/ TO-220F)

P_D

Derate above 25°C

W / ˚C

T_J

Junction Temperature

˚C

T_STG

-55 ~ +150

Operating and Storage Temperature

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

Junction-to-Ambient

Junction-to-Case

SYMBOL

MIN

TYP

MAX

62.5

UNIT

θ_JA

TO-220, TO-263

TO-220F

θ_Jc

˚C / W

0.88

2.6

ELECTRICAL CHARACTERISTICS

(T_C= 25˚C , unless Otherwise specified.)

PARAMETER

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

BV_DSS

I_DSS

V_GS= 0V, I_D= 250µA

650

µA

Drain-Source Leakage Current

Gate-Body Leakage Current

V_DS= 650V, V_GS= 0V

I_GSSF

I_GSSR

V_GS= 30V, V_DS= 0V

Forward

Reverse

100

V_GS= -30V, V_DS= 0V

-100

I_D= 250µA, Referenced to

25°C

ΔBV_DSS/ ΔT_J

Breakdown Voltage Temperature Coefficient

0.7

V / ˚C

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

g_FS

V_DS= V_GS, I_D= 250µA

V_GS= 10V, I_D= 3.5A

2.0

4.0

1.4

Ω

Static Drain-Source On-Resistance

1.1

8.7

V_DS= 40V, I_D= 3.5A (Note 4)

Forward Transconductance

DYNAMIC CHARACTERISTICS

Input Capacitance

C_ISS

C_OSS

C_RSS

965

105

V_DS= 25V, V_GS= 0V,

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Delay Time

t_D(ON)

t_R

t_D(OFF)

t_F

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

V_DD= 300V, I_D= 7A, R_G= 25Ω

(Note 4,5)

Q_G

V_DS= 480V,I_D= 7A, V_GS= 10V

(Note 4,5)

Q_GS

Q_GD

Gate-Drain Charge

2017. 01. 02

Revision No : 1

2/7

FTK7N65D/I/P/F/DD

(T_J

˚C ,

Otherwise specified.)

unless

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

V_SD

I_S

V_GS= 0 V, I_S= 7.0 A

Drain-Source Diode Forward Voltage

1.5

7.5

Maximum Continuous Drain-Source Diode

Forward Current

Maximum Pulsed Drain-Source Diode Forward

Current

I_SM

t_RR

V_GS= 0 V, I_S= 7.0A,

Reverse Recovery Time

400

4.0

Q_RR

d_IF/dt =100 A/µs (Note 4)

Reverse Recovery Charge

µC

Note:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 19.5mH, I ^AS= 7.0A, V_DD= 50V, R_G= 25 Ω, Starting T_J= 25°C

3. I_SD

μs, V_DD≤ BV_DSS, Starting T_J= 25°C

≤ 7.5A, di/dt ≤ 300A/

4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

2017. 01. 02

Revision No : 1

3/7

FTK7N65D/I/P/F/DD

D.U.T.

V_DS

R_G

Driver

V_DD

* dv/dt controlled by R

* I_SDcontrolled by pulse period

* D.U.T.-Device Under Test

Same Type

as D.U.T.

V_GS

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

Period

P. W.

V_GS

(Driver)

P.W.

Period

10V

V_GS

_FM, Body Diode Forward Current

I_SD

(D.U.T.)

di/dt

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_DS

(D.U.T.)

V_DD

Body Diode

Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

2017. 01. 02

Revision No : 1

4/7

FTK7N65D/I/P/F/DD

TEST CIRCUITS AND WAVEFORMS (Cont.)

R_L

V_DS

90%

V_DD

V_GS

R_G

10%

V_GS

D.U.T.

10V

t_D(ON)

t_D(OFF)

Pulse Width ≤ 1μs

Duty Factor ≤ 0 1%

t_F

t_R

Fig. 2A Switching Test Circuit

Fig. 2B Switching Waveforms

Same Type

as D.U.T.

50kΩ

Q_G

12V

10V

0 3μF

0.2μF

V_DS

Q_GS

Q_GD

V_GS

DUT

V_G

3mA

Charge

Fig. 3A Gate Charge Test Circuit

Fig. 3B Gate Charge Waveform

V_DS

BV_DSS

R_D

V_DD

10V

D.U.T.

t_p

I_AS

Time

t_p

Fig. 4A Unclamped Inductive Switching Test Circuit

Fig. 4B Unclamped Inductive Switching Waveforms

2017. 01. 02

Revision No : 1

5/7

FTK7N65D/I/P/F/DD

V_GS

15.0V

10.0V

8.0V

7.0V

6.5V

6.0V

5.5V

Top:

10¹

150!

Bottom: 5.0V

10⁰

25!

-55!

10⁰

Notes:

1.V_DS=40V

2. 250us Pulse test

Notes

1.250us Pulse Test

2.T_c=25!

10^-1

10⁰

V_DS^,Drain-Source Voltage[V]

10¹

V_GS^,Gate-Source Voltage[V]

Figure 2.Transfet Characteristics

Figure 1.On-Region Characteristics

3.5

10¹

3.0

2.5

V_GS=10V

2.0

1.5

10⁰

V_GS=20V

Notes:

1.V_GS=0V

2. 250us Pulse Test

1.0

0.5

150!

Note:T =25

℃

25!

10^-1

I_D^,Drain Current[A]

1.2

1.0

1.4

0.6

0.2

0.4

0.8

V_SD^,Source-Drain voltage[V]

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 3.On-Resistance Variation vs

Drain Current and Gate Voltage

2000

1800

C_iss=C_gs+C_gd(C_gd=shorted)

C_oss=C_ds+C_gd

C_rss=C_gd

V_DS=120V

V_DS=300V

1600

1400

1200

1000

800

C_iss

V_DS=480V

C_oss

Notes:

1.V_GS=0V

2. f=1MHZ

600

C_rss

400

Note:I_D=8A

200

10^-1

10⁰

V_DS^,Drain-Source Voltage [V]

10¹

Q_G^,Total Gate Charge[nC]

Figure 5.Capacitance Characteristics

Figure 6. Gate Charge Characteristics

2017. 01. 02

Revision No : 1

6/7

FTK7N65D/I/P/F/DD

1.2

1.1

3.0

2.5

2.0

1.5

1.0

0.9

0.8

1.0

Notes:

1.V_GS=0V

2. I_D=250uA

Notes:

1.V_GS=10V

2. I_D=4A

0.5

0.0

-100

-50

100

150

200

-50

-100

100

150

200

T_JJunctionTemperature [u ]

T_JJunctionTemperature [

]

-50

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

Operation in This Area

10²

Is Limited by R_DS(on)

10us

100us

1ms

10¹

10ms

100ms

10⁰

Notes:

10^-1

1. T_C=25!

2. T_J=150!

3. Single Pulse

10^-2

10⁰

100

10¹

150

10³

10²

125

V_DS,Drain-Source VoltageWave[V]

T_C,Case Temperature [u ]

Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 9. Maximum Safe Operating Area

D=0.5

10⁰

0.2

0.1

Notes:

1. Z ^jc(t)=2.6! /W Max.

2. Duty Factor,D=t₁/t₂

3. T_JM-T_C=P_DM*Z JC(t)

0.05

10^-1

0.02

0.01

P_DM

Single pulse

10^-2

10^-5

10^-3

10⁰

10¹

10^-1

10^-4

t_1,Square Wave Pulse Duration[sec]

Figure 11. Transient Thermal Response Curve

2017.01. 02

Revision No : 1

7/7

相关型号：