FTK7N70DD [FS]
7 Amps, 700 Volts N-CHANNEL MOSFET;
| 型号： | FTK7N70DD |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | 7 Amps, 700 Volts N-CHANNEL MOSFET |
| 文件： | 总7页 (文件大小：394K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
FTK7N70P/F/DD
TECHNICAL DATA
7 Amps, 700 Volts
N-CHANNEL MOSFET
DESCRIPTION
These N-Channel enhancement mode power field effect
Transistors are produced using planar stripe, DMOS
technology.
This advanced technology has been especially tailored
to minimize on - state resistance , provide superior
switching performance,and Withstand high energy pulse
in the avalanche and commutaion mode .These devices
are well suited for high efficiency switch mode power
supply electronic lamp ballasts
P :
1
TO-220
F :
based on half bridge topology.
1
TO-220F
FEATURES
* RDS(ON)= 1.7Ω@VGS = 10V
* Low gate and reverse transfer Capacitance ( C: 18 pF typical )
* Fast switching capability
* Avalanche energy tested
DD :
1
* Improved dv/dt capability, high ruggedness
TO-263
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Pin Assignment
Order Number
Package
Packing
1
2
3
FTK7N70P
FTK7N70F
FTK7N70DD
TO-220
TO-220F
TO-263
G
D
S
Tube
Tube
G
G
D
D
S
S
Reel & Taping
Note: Pin Assignment:
G: Gate
D: Drain S: Source
2016. 05. 10
Revision No : 0
1/7
FTK7N70P/F/DD
(
TC
= 25˚C, unless otherwise specified)
ABSOLUTE MAXIMUM RATINGS
PARAMET
SYMBOL
VDSS
RATINGS
700
UNIT
V
Drain-Source Voltage
VGSS
Gate-Source Voltage
±30
V
IAR
Avalanche Current (Note 1)
7.0
A
TC = 25°C
7.0
A
Continuous Drain Current
Pulsed Drain Current (Note 1)
Avalanche Energy
ID
TC = 100°C
4.7
IDM
EAS
28
A
Single Pulse(Note 2)
530
14.2
4.5
mJ
mJ
Repetitive Limited by TJ(MAX)
EAR
Peak Diode Recovery dv/dt (Note 3)
dv/dt
V/ns
W
TC = 25°C
156 / 48
1.25 / 0.38
+150
Power Dissipation (TO-220,TO-263/ TO-220F)
PD
Derate above 25°C
W / ˚C
TJ
Junction Temperature
˚C
˚C
TSTG
-55 ~ +150
Operating and Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
SYMBOL
MIN
TYP
MAX
62.5
UNIT
θJA
TO-220, TO-263
TO-220F
θJc
θJc
˚C / W
1.18
2.6
ELECTRICAL CHARACTERISTICS
(TC=25˚C , unless Otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
TEST CONDITIONS
MIN
700
TYP
MAX UNIT
V
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 700V, VGS = 0V
10
µA
Drain-Source Leakage Current
Gate-Body Leakage Current
IGSSF
IGSSR
VGS = 30V, VDS = 0V
Forward
100
nA
nA
VGS = -30V, VDS = 0V
Reverse
-100
ID = 250µA, Referenced to
25°C
ΔBVDSS / ΔTJ
Breakdown Voltage Temperature Coefficient
0.7
8.0
V / ˚C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
gFS
V
V
DS = VGS, I
D
= 250µA
2.0
4.0
1.7
V
Ω
S
GS = 10V, I
D
= 3.5A
Static Drain-Source On-Resistance
VDS = 40V, ID = 3.5A (Note 4)
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
1200
150
18
pF
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
35
ns
V
DD = 350V, I
D
= 7.0A
tR
tD(OFF)
tF
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
79
80
52
30
6.5
ns
ns
, R = 25Ω
G
(Note 4,5)
ns
QG
nC
nC
V
DS= 560V,I
VGS
(Note 4,5)
D= 7.0A
QGS
=
10V
QGD
Gate-Drain Charge
13
nC
2016. 05. 10
Revision No : 0
2/7
FTK7N70P/F/DD
ELECTRICAL CHARACTERISTICS (T
c
=25˚C ,unlessOtherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
V
GS = 0 V, I = 7.0A
S
Drain-Source Diode Forward Voltage
1.4
10
V
A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode Forward
Current
ISM
40
A
tRR
VGS = 0 V, IS = 7.0A,
Reverse Recovery Time
320
2.4
ns
QRR
dIF/dt =100 A/µs (Note 4)
Reverse Recovery Charge
µC
Note:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 19.5mH, IAS = 7.0A, VDD = 50V, R = 25 Ω, Starting T = 25°C
= 25°C
G
J
3. ISD ≤ 7.0A, di/dt ≤ 300A/μs, VDD ≤ BVDSS, Starting T
4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
J
2016. 05. 10
Revision No : 0
3/7
FTK7N70P/F/DD
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by R
G
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
Period
P. W.
VGS
(Driver)
D=
P.W.
Period
10V
=
VGS
I
FM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
2016. 05. 10
Revision No : 0
4/6
FTK7N70P/F/DD
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
10%
VGS
D.U.T.
10V
tD(ON)
tD(OFF)
Pulse Width ≤ 1μs
Duty Factor ≤ 0 1%
tF
tR
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
as D.U.T.
50kΩ
QG
12V
10V
0 3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
VG
3mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
RD
VDD
10V
D.U.T.
tp
IAS
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
2016. 05. 10
Revision No : 0
5/7
FTK7N70P/F/DD
TYPICAL CHARACTERISTICS
Breakdown Voltage Variation vs.
Temperature
1.2
On-Resistance Junction Temperature
3.0
2.5
2.0
1.5
1.1
1.0
Note:
1. VGS=0V
2. ID=250uA
Note:
1. VGS=10V
2. ID=3.5A
1.0
0.5
0.0
0.9
0.8
200
0
-100 -50
50 100 150
-50
-100
0
50 100 150 200
Junction Temperature, TJ (
)
Junction Temperature, TJ (
)
Maximum Drain Current vs. Case
Temperature
Maximum Safe Operating Area
8
6
4
Operation in This Area is Limited by R
DS(ON)
100�s
10
1ms
10ms
DC
1
Notes:
1. TJ=25
2. TJ=150
3. Single Pulse
2
0
0.1
1
10
100
1000
25 50
75 100 125 150
Case Temperature, TC (
)
Drain-Source Voltage, VDS (V)
On-State Characteristics
Transfer Characteristics
V
GS
10
Top: 10V
8V
7.5V
10
7V
6.5V
6 V
5.5V
Bottorm:5.5V
25
1
150
1
Notes:
1. 250us Pulse Test
0.1
Notes:
1. VDS=50V
2. 250us Pulse Test
2. TC=25℃
0.1
2
4
6
8
10
0.1
1
10
Gate-Source Voltage, VGS (V)
Drain-to-Source Voltage, VDS (V)
2016. 05. 10
Revision No : 0
6/7
FTK7N70P/F/DD
On State Current vs. Allowable Case
Temperature
On-Resistance Variation vs. Drain
Current and Gate Voltage
3
2
1
0
10
VGS = 10V
150
25
1
VGS = 20V
Notes:
1. VGS=0V
2. 250�s Test
Note : TJ = 25oC
16 20
0.1
0.2 0.4 0.6
0
4
8
12
0.8 1.0 1.2 1.4 1.6 1.8
ID, Drain Current [A]
Source-Drain Voltage, VSD (V)
Capacitance Characteristics
(Non-Repetitive)
Gate Charge Characteristics
12
10
8
2000
Ciss Cgs+Cgd (Cds=shorted )
Coss=Cds+Cgd Crss=Cgd
VDS=520V
VDS=325V
VDS=130V
1600
1200
800
C
iss
Notes:
1. VGS=0V
Coss
6
2. f = 1MHz
4
2
400
0
Crss
Note: ID=7A
0
40
0
10 20 30
50 60 70
0.1
1
10
Total Gate Charge, QG (nC)
Drain-SourceVoltage, VDS (V)
Transient Thermal Response
Curve
1
0.1
Notes:
1. JC (t) = 0.88 /W Max.
2. Duty Factor, D=t1/t2
3.TJM-TC=PDM× JC (t)
0.01
1E-5
1E-4 1E-3 0.01 0.1
1
10
Square Wave Pulse Duration, t1 (sec)
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Revision No : 0
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