FTVUSD03FB [FS]
ESD Protection Diodes;
| 型号： | FTVUSD03FB |
| 厂家： | 
First Silicon Co., Ltd |
| 描述： | ESD Protection Diodes |
| 文件： | 总4页 (文件大小：281K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
TECHNICAL DATA
FTVUSD03FB ~ FTVUSD25FB
ESD Protection Diodes
Features
350 Watts Peak Pulse Power per Line (tp=8/20µs)
Protects one I/O or power line( bidirectional)
Low clamping voltage
2
Working voltages: 3. 3V, 5V, 8V,12V, 15V, 24V
Low leakage current
1
SOD-323
IEC Compatibility
IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
IEC61000-4-4 (EFT) 40A (5/50ηs)
1
2
Applications
Cell Phone Handsets and Accessories
Microprocessor based equipment
Personal Digital Assistants(PDA's)
Notebooks,Desktops,and Servers
Portable Instrumentation
Peripherals
USB Interface
Mechanical Characteristics
JEDEC SOD-323 Package
Molding Compound Flammability Rating:UL 94V-O
Weight 5 Millgrams(Approximate)
Quantity Per Reel:3000pcs
Reel Size:7 inch
Lead Finish:Lead Free
Maximum Ratings(TA =25
℃
unless otherwise specified)
Symbol
Parameter
Peak Pulse Power(tp=8/20µs)
Lead Soldering Temperature
Operating Temperature Range
Storage Temperature Range
Value
Units
P
PP
350
Watts
℃
T
L
J
260(10 sec.)
-55~150
℃
T
℃
T
STG
-55~150
2019. 10. 17
Revision No : 0
1/4
FTVUSD03FB ~ FTVUSD25FB
Electrical Characteristics(TA =25
℃
unless otherwise specified)
FTVUSD03FB(Marking:CC)
Symbol
Parameter
Reverse Stand-off Voltage
Breakdown Voltage
Conditions
Min.
Max.
Units
V
RWM
3.3
V
V
IT=1mA
V
BR
4
I
I
PP=1A,tp=8/20µs
PP=8A,tp=8/20µs
7.5
13.9
20
V
Clamping Voltage
V
C
V
Reverse Leakage Current
Junction Capacitance
@VRWM
I
R
µA
0Vdc,f=1MHz
1.5
C
I/O
pF
Between I/O Pins and GND
FTVUSD05FB(Marking:AC)
Symbol
Parameter
Reverse Stand-off Voltage
Breakdown Voltage
Conditions
Min.
Max.
Units
V
RWM
5
V
V
IT=1mA
V
BR
6
I
I
PP=1A,tp=8/20µs
PP=8A,tp=8/20µs
9.8
18.5
5
V
Clamping Voltage
V
C
V
Reverse Leakage Current
Junction Capacitance
@VRWM
I
R
µA
0Vdc,f=1MHz
1.5
C
I/O
pF
Between I/O Pins and GND
FTVUSD08FB(Marking:BC)
Symbol
Parameter
Reverse Stand-off Voltage
Breakdown Voltage
Conditions
Min.
Max.
Units
V
RWM
8
V
V
IT=1mA
V
BR
8.5
I
I
PP=1A,tp=8/20µs
PP=8A,tp=8/20µs
13.4
26
V
Clamping Voltage
V
C
V
Reverse Leakage Current
Junction Capacitance
@VRWM
2
I
R
µA
0Vdc,f=1MHz
1.5
C
I/O
pF
Between I/O Pins and GND
2019. 10. 17
Revision No : 0
2/4
FTVUSD03FB ~ FTVUSD25FB
Electrical Characteristics(TA =25
℃
unless otherwise specified)
FTVUSD12FB(Marking:DC)
Symbol
Parameter
Reverse Stand-off Voltage
Breakdown Voltage
Conditions
Min.
Max.
Units
V
RWM
12
V
V
IT=1mA
V
BR
13.3
I
I
PP=1A,tp=8/20µs
PP=7A,tp=8/20µs
19
30
1
V
Clamping Voltage
V
C
V
Reverse Leakage Current
Junction Capacitance
@VRWM
I
R
µA
0Vdc,f=1MHz
1.5
C
I/O
pF
Between I/O Pins and GND
FTVUSD15FB(Marking:EC)
Symbol
Parameter
Reverse Stand-off Voltage
Breakdown Voltage
Conditions
Min.
Max.
Units
V
RWM
15
V
V
IT=1mA
V
BR
16.7
I
I
PP=1A,tp=8/20µs
PP=6A,tp=8/20µs
24
35
1
V
Clamping Voltage
V
C
V
Reverse Leakage Current
Junction Capacitance
@VRWM
I
R
µA
0Vdc,f=1MHz
1.5
C
I/O
pF
Between I/O Pins and GND
FTVUSD24FB(Marking:HC)
Symbol
Parameter
Reverse Stand-off Voltage
Breakdown Voltage
Conditions
Min.
Max.
Units
V
RWM
24
V
V
IT=1mA
V
BR
26.7
I
I
PP=1A,tp=8/20µs
PP=3A,tp=8/20µs
43
56
1
V
Clamping Voltage
V
C
V
Reverse Leakage Current
Junction Capacitance
@VRWM
I
R
µA
0Vdc,f=1MHz
1.5
C
I/O
pF
Between I/O Pins and GND
2019. 10. 17
Revision No : 0
3/4
FTVUSD03FB ~ FTVUSD25FB
Ratings and Characteristic Curves
Fig.1 PulseWaveform
Fig.2 Peak Pulse Power vs. Pulse Time
10000
110
100
90
Waveform
Parameters:
tr=8µs
td=20µs
80
350W,8/20µs Waveform
1000
100
10
70
60
50
40
30
20
10
0
e-1
td=IPP/2
0
10
15
20
25
30
5
1
10
1000
0.01
100
10000
Time(µs)
td-Pulse Duration-(µs)
Outline and Dimensions
SOD-323
HE
D
Millimeters
Inches
DIM
A
Min
0.80
0.00
Max
1.00
0.10
Min
Max
0.031 0.040
0.000 0.004
0.006REF
b
1
2
E
A1
A3
b
0.15REF
0.25
0.40
0.010 0.016
C
0.089 0.177 0.003 0.007
A3
D
1.60
1.15
0.08
2.30
1.80
1.35
0.062 0.070
0.045 0.053
0.003
E
L
A
HE
2.70
0.090 0.105
L
A1
C
Recommended Mounting Pad Layout
2.85
0.112
0.83
0.033
1.60
0.063
millimeters
inches
Dimensions in (
)
0.63
0.025
2019. 10. 17
Revision No : 0
4/4
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