FLK012WF [FUJITSU]
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE WF, 3 PIN;
| 型号： | FLK012WF |
| 厂家： | 
FUJITSU |
| 描述： | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE WF, 3 PIN 局域网 晶体管 |
| 文件： | 总4页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FLK012WF
X-Ku Band Power GaAs FETs
FEATURES
• High Output Power: P
= 20.5dBm(Typ.)
1dB
= 7.5dB(Typ.)
• High Gain: G
1dB
= 26%(Typ.)
• High PAE: h
add
• Proven Reliability
• Hermetic Metal/Ceramic Package
DESCRIPTION
The FLK012WF is a power GaAs FET that is designed for general
purpose applications in the Ku-Band frequency range as it provides
superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25¡C)
Item
Symbol
Condition
Unit
Rating
Drain-Source Voltage
Gate-Source Voltage
V
V
15
-5
V
V
DS
GS
T = 25¡C
c
Total Power Dissipation
Storage Temperature
Channel Temperature
P
1.15
-65 to +175
175
W
¡C
¡C
T
T
stg
T
ch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (V ) should not exceed 10 volts.
DS
2. The forward and reverse gate currents should not exceed +0.25 and -0.05 mA respectively with
gate resistance of 3000W.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25¡C)
Limit
Typ.
Item
Symbol
Test Conditions
Unit
Min.
Max.
V
V
V
I
= 5V, V
= 5V, I
= 0V
GS
Saturated Drain Current
Transconductance
I
-
-
60
90
-
mA
DS
DS
DS
DSS
g
m
=40mA
=3mA
DS
30
mS
V
DS
Pinch-off Voltage
V
= 5V, I
-1.0
-5
-2.0 -3.5
p
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
V
-
-
-
-
-
V
= -3µA
GSO
GS
P
19.5 20.5
dBm
dB
1dB
V
= 10V,
DS
Power Gain at 1dB G.C.P.
Power-added Efficiency
Noise Figure
G
6.0
-
7.5
26
I
= 0.6 I
1dB
DS
f = 14.5 GHz
DSS (Typ.),
h
add
%
NF
V
= 3V,
DS
= 20mA
-
-
-
2.5
7
-
-
dB
dB
I
DS
f = 12 GHz
(Typ.),
Associated Gain
Gas
R
th
Thermal Resistance
Channel to Case
65
130
¡C/W
G.C.P.: Gain Compression Point
CASE STYLE: WF
Data Sheets
1998 Microwave Databook
252
FLK012WF
X-Ku Band Power GaAs FETs
POWER DERATING CURVE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
2
1
2.
V
=0V
GS
-0.5V
-1.0V
60
40
20
-1.5V
-2.0V
0
2
4
6
8
10
0
50
100
150
200
Drain-Source Voltage (V)
Case Temperature (¡C)
OUTPUT POWER vs. INPUT POWER
I
» 0.6 I
DSS
DS
f = 14.5GHz
V
V
=10V
=8.5V
DS
DS
22
20
18
16
14
P
out
40
20
h
add
5
7
9
11 13 15
Input Power (dBm)
Data Sheets
1998 Microwave Databook
253
FLK012WF
X-Ku Band Power GaAs FETs
+j50
+90˚
2.0
S
S
S
S
11
22
21
12
+j100
+j25
1.6
1.2
0.8
13 14
15
12
16
16
+j250
+j10
11
8 GHz
15
10
0.4
9
14
13
10
25
50W
100
250
0.2
0.1
0
180˚
0°
9
SCALE FOR |S
21
9
8
12
11
11
10
10
12
14
-j10
15
13
16
-j250
11
10
12
16
9
13
15
8 GHz
14
-j25
-j100
-j50
-90˚
S-PARAMETERS
V
= 10V, I
= 40mA
DS
S21
DS
FREQUENCY
(MHZ)
S11
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
500
1000
.992
.985
.804
.793
.770
.755
.745
.726
.684
.617
.535
-13.0
-25.1
2.474
2.454
1.566
1.447
1.335
1.237
1.170
1.129
1.094
1.078
1.074
167.9
156.7
15.8
.007
.014
.037
.035
.033
.031
.030
.033
.037
.044
.056
78.0
69.9
.797
.794
.760
.785
.797
.804
.814
.838
.864
.875
.866
-8.6
-16.2
8000
-173.9
169.8
154.9
140.6
127.3
113.6
99.8
-23.4
-28.1
-37.5
-43.7
-51.4
-64.1
-80.4
-119.1
-132.5
-145.4
-158.0
-169.4
-180.0
170.3
159.8
149.0
9000
-1.7
10000
11000
12000
13000
14000
15000
16000
-18.1
-33.5
-48.6
-64.4
-80.6
-97.9
-116.4
83.8
-102.9
-126.5
65.7
Data Sheets
1998 Microwave Databook
254
FLK012WF
X-Ku Band Power GaAs FETs
Case Style "WF"
Metal-Ceramic Hermetic Package
2.
2.5
(0.098)
2-ø1.6±0.01
(0.063)
1
2
0.1±0.05
(0.004)
3
0.6
(0.024)
8.5±0.2
(0.335)
6.1±0.1
(0.240)
1: Gate
2: Source (Flange)
3: Drain
Unit: mm (inches)
Data Sheets
1998 Microwave Databook
255
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