MB85R256HPFCN-G-BNDAE1 [FUJITSU]
SPECIALTY MEMORY CIRCUIT, PDSO28, 11.80 X 8 MM, 1.20 MM HEIGHT, 0.55 MM PITCH, PLASTIC, TSOP1-28;
| 型号： | MB85R256HPFCN-G-BNDAE1 |
| 厂家： | 
FUJITSU |
| 描述： | SPECIALTY MEMORY CIRCUIT, PDSO28, 11.80 X 8 MM, 1.20 MM HEIGHT, 0.55 MM PITCH, PLASTIC, TSOP1-28 光电二极管 |
| 文件： | 总16页 (文件大小：462K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FUJITSU MICROELECTRONICS
DATA SHEET
DS05-13106-5E
Memory FRAM
CMOS
256 K (32 K × 8) Bit
MB85R256H
■ DESCRIPTIONS
The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x
8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
memory cells.
The MB85R256H is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R256H can be used for 1010 read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E2PROM.
The MB85R256H uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.
■ FEATURES
• Bit configuration : 32,768 words x 8 bits
• High endurance 10 Billion Read/writes
• Peripheral circuit CMOS construction
• Operating power supply voltage : 2.7 V to 3.6 V
• Operating temperature range
• Data retention
: −40 °C to +85 °C
: 10 years (+70 °C)
• Package
: 28-pin, SOP flat package
: 28-pin, TSOP(1) flat package
Copyright©2006-2009 FUJITSU MICROELECTRONICS LIMITED All rights reserved
2009.7
MB85R256H
■ PIN ASSIGNMENTS
(TOP VIEW)
A
14
12
1
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
A
2
WE
A
7
6
5
4
3
2
1
0
0
1
2
3
A
A
A
A
13
A
4
8
A
A
5
9
6
11
A
7
OE
A
8
A10
A
9
CE
A
10
11
12
13
14
I/O
I/O
I/O
I/O
I/O
7
I/O
I/O
I/O
6
5
4
3
GND
(FPT-28P-M17)
22
21
A10
OE
23
24
25
26
27
28
1
2
3
4
5
20
19
18
17
16
15
14
13
12
11
10
9
CE
A
A
A
11
9
I/O
I/O
I/O
I/O
I/O
7
8
6
5
4
3
A13
WE
VCC
A
A
14
12
GND
I/O
I/O
I/O
2
1
0
A
A
A
A
A
7
6
5
4
3
A0
A1
A2
6
7
8
(FPT-28P-M19)
2
DS05-13106-5E
MB85R256H
■ PIN FUNCTIONAL DESCRIPTIONS
Pin no.
Pin name
A0 to A14
I/O0 to I/O7
CE
Functional description
Address input
1 to 10, 21, 23 to 26
11 to 13, 15 to 19
Data input/output
Chip enable input
Write Enable input
Output enable input
Power supply ( + 3.3 V Typ)
Ground
20
27
22
28
14
WE
OE
VCC
GND
DS05-13106-5E
3
MB85R256H
■ BLOCK DIAGRAM
A
A
14 to A10
Block decoder
A
14 to A0
7
to A0
Row
decoder
FRAM array:
32,768 x 8
Address
latch
CE
A
8, A9
Column decoder
WE
OE
Control logic
I/O latch bus
driver
I/O7 to I/O0
■ FUNCTION LIST
Operation mode
I/O7 to I/O0
Power supply current
CE
H
×
WE
×
OE
×
Standby
(ISB)
Standby precharge
L
L
High-Z
×
H
H
Latch address
Write
L
⎯
⎯
L
L
H
L
Data input
Data output
Operation (ICC)
Read
L
H
H: High level, L: Low level, × : Irrespective of “H” or “L”
4
DS05-13106-5E
MB85R256H
■ ABSOLUTE MAXIMUM RANGES
Rating
Parameter
Symbol
Unit
Min
Max
Power supply voltage
Input voltage
VCC
VIN
− 0.5
− 0.5
− 0.5
− 40
− 40
+ 4.0
VCC + 0.5
VCC + 0.5
+ 85
V
V
Output voltage
VOUT
TA
V
Operating temperature
Storage temperature
°C
°C
Tstg
+ 125
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING CONDITIONS
Value
Parameter
Symbol
Unit
Min
2.7
Typ
3.3
⎯
Max
3.6
Power supply voltage
High level input voltage
Low level input voltage
Operating temperature
VCC
VIH
VIL
TA
V
V
VCC × 0.8
− 0.5
VCC + 0.5
+ 0.6
⎯
V
− 40
⎯
+ 85
°C
WARNING: The recommended operating conditions are required in order to ensure the normal operation of
the semiconductor device. All of the device's electrical characteristics are warranted when the
device is operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges.
Operation outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented
on the data sheet. Users considering application outside the listed conditions are advised to contact
their representatives beforehand.
DS05-13106-5E
5
MB85R256H
■ ELECTRICAL CHARACTERISTICS
1. DC Characteristics
(within recommended operating conditions)
Value
Unit
Parameter
Symbol
Conditions
Min
Typ
Max
Input leakage current
| ILI |
VIN = 0 V to VCC
⎯
⎯
10
μA
μA
Output leakage
current
VOUT = 0 V to VCC,
CE = VIH or OE = VIH
| ILO |
⎯
⎯
10
CE = 0.2 V,
Other inputs = VCC − 0.2 V/0.2 V,
tRC (Min), Ii/o = 0 mA
Operating power
supply current
ICC
⎯
5
10
mA
Standby current
ISB
CE, WE, OE ≥ VCC
⎯
5
50
μA
High level output
voltage
VOH
IOH = − 2.0 mA
VCC × 0.8
⎯
⎯
V
Low level output
voltage
VOL
IOL = 2.0 mA
⎯
⎯
0.4
V
2. AC Characteristics
(1) Read cycle
(within recommended operating conditions)
Value
Parameter
Symbol
Unit
Min
Max
⎯
Read cycle time
tRC
tCA
tRP
tPC
tAS
tAH
tCE
tOE
tHZ
tOHZ
150
70
70
80
0
CE active time
2000
2000
⎯
Read pulse width
Precharge time
Address setup time
Address hold time
CE access time
⎯
ns
25
⎯
⎯
⎯
⎯
⎯
70
OE access time
70
CE output floating time
OE output floating time
25
25
6
DS05-13106-5E
MB85R256H
(2) Write cycle
(within recommended operating conditions)
Value
Parameter
Symbol
Unit
Min
Max
⎯
Write cycle time
CE active time
Write pulse width
Precharge time
tWC
tCA
tWP
tPC
tAS
tAH
tDS
tDH
tWS
tWH
150
70
70
80
0
2000
2000
⎯
Address setup time
Address hold time
Data setup time
Data hold time
⎯
ns
25
50
0
⎯
⎯
⎯
Write set up time
Write hold time
0
⎯
0
⎯
3. Pin Capacitance
Parameter
Value
Typ
⎯
Symbol
Conditions
Unit
Min
Max
10
Input capacitance
Output capacitance
CIN
⎯
⎯
pF
pF
VIN = VOUT = GND,
f = 1 MHz, TA = + 25 °C
COUT
⎯
10
4. AC Characteristics Test Condition
Power supply voltage : 2.7 V to 3.6 V
Input voltage amplitude : 0.3 V to 2.7 V
Input rising time
: 10 ns
Input falling time
Input evaluation level
: 10 ns
: 2.0 V/0.8 V
Output evaluation level : 2.0 V/0.8 V
Output load
: 100 pF
DS05-13106-5E
7
MB85R256H
■ TIMING DIAGRAM
1. Read cycle (CE Control)
t
RC
t
PC
t
PC
t
CA
CE
t
AH
t
AH
t
AS
t
AS
Valid
Valid
A
14 to A
0
t
RC
t
PC
t
PC
t
RP
OE
t
OE
t
OHZ
High-Z
High-Z
Valid
Valid
I/O7
to I/O
0
t
HZ
t
CE
WE
“H” level
: Don't care.
2. Read cycle (OE Control)
t
RC
t
PC
t
PC
t
CA
CE
t
AH
t
AH
t
AS
t
AS
A
14 to A
0
Valid
Valid
t
RC
t
PC
t
PC
t
RP
OE
t
OE
t
OHZ
High-Z
High-Z
Valid
I/O
7
to I/O
0
Valid
t
HZ
t
CE
WE
“H” level
: Don't care.
8
DS05-13106-5E
MB85R256H
3. Write cycle (CE Control)
t
WC
t
t
PC
t
PC
t
CA
CE
t
AS
t
AH
t
AS
t
AH
Valid
Valid
A14 to A0
t
WC
t
PC
PC
t
WH
t
WS
t
WH
tWS
t
WP
WE
t
DS
t
DS
t
DH
tDH
Valid
Valid
Data In
OE
“H” level
: Don't care.
4. Write cycle (WE Control)
t
WC
t
t
PC
t
PC
t
CA
CE
t
AS
t
AH
t
AS
t
AH
Valid
Valid
A14 to A0
t
WC
t
PC
PC
t
WH
tWS
t
WH
tWS
t
WP
WE
t
DS
t
DS
t
DH
tDH
Valid
Valid
Data In
OE
“H” level
: Don't care.
DS05-13106-5E
9
MB85R256H
■ POWER ON/OFF SEQUENCE
tpd
tr
tpu
VCC
VCC
3.0 V
3.0 V
VIH (Min)
VIH (Min)
1.0 V
1.0 V
VIL (Max)
VIL (Max)
GND
GND
*
*
CE > VCC × 0.8
CE : Don't care
CE > VCC × 0.8
CE
CE
* : CE (Max) < VCC + 0.5 V
Notes: • Because turning the power-on from an intermediate level cause malfunction, when the power
is turned on, VCC is required to be started from 0 V.
• If the device does not operate within the specified conditions of read cycle, write cycle, power
on/off sequence, memory data can not be guaranteed.
(within recommended operating conditions)
Value
Parameter
Symbol
Unit
Min
80
Typ
⎯
Max
⎯
CE level hold time at power OFF
CE level hold time at power ON
Power supply rising time
tpd
tpu
tr
ns
ns
80
⎯
⎯
0.05
⎯
200
ms
■ NOTES ON USE
After the IR reflow completed, it is not guaranteed to save the data written prior to the IR reflow.
■ ORDERING INFORMATION
Part number
Package
Remarks
28-pin plastic SOP
(FPT-28P-M17)
MB85R256HPF-G-BNDAE1
28-pin plastic TSOP(1)
(FPT-28P-M19)
MB85R256HPFCN-G-BNDAE1
MB85R256HPF-G-BND-ERAE1
28-pin plastic SOP
(FPT-28P-M17)
Embossed carrier tape
10
DS05-13106-5E
MB85R256H
■ PACKAGE DIMENSIONS
28-pin plastic SOP
Lead pitch
1.27 mm
8.6 × 17.75 mm
Gullwing
Package width
package length
×
Lead shape
Sealing method
Mounting height
Weight
Plastic mold
2.80 mm MAX
0.82 g
Code
(Reference)
P-SOP28-8.6×17.75-1.27
(FPT-28P-M17)
28-pin plastic SOP
(FPT-28P-M17)
Note 1) *1 : These dimensions include resin protrusion.
Note 2) *2 : These dimensions do not include resin protrusion.
Note 3) Pins width and pins thickness include plating thickness.
Note 4) Pins width do not include tie bar cutting remainder.
*
117.75 –+00..2205 .699 –+..000180
0.17 +–00..0043
.007 +–..000021
28
15
11.80±0.30
(.465±.012)
*
28.60±0.20
(.339±.008)
INDEX
Details of "A" part
2.65±0.15
(.104±.006)
(Mounting height)
0.25(.010)
1
14
"A"
0~8
°
1.27(.050)
0.47±0.08
(.019±.003)
M
0.13(.005)
0.80±0.20
(.031±.008)
0.20±0.15
(.008±.006)
(Stand off)
0.88±0.15
(.035±.006)
0.10(.004)
Dimensions in mm (inches).
Note: The values in parentheses are reference values.
C
2002-2008 FUJITSU MICROELECTRONICS LIMITED F28048S-c-3-5
Please confirm the latest Package dimension by following URL.
http://edevice.fujitsu.com/package/en-search/
(Continued)
DS05-13106-5E
11
MB85R256H
(Continued)
28-pin plastic TSOP (1)
Lead pitch
0.55 mm
11.80 × 8.00 mm
Gullwing
Package width
package length
×
Lead shape
Sealing method
Mounting height
Weight
Plastic mold
1.20 mm Max
Approx. 0.25 g
P-TSOP(1)28-11.8×8-0.55
Code
(Reference)
(FPT-28P-M19)
28-pin plastic TSOP (1)
(FPT-28P-M19)
22
21
INDEX
28
1
LEAD No.
7
8
0.15
(.006
±
±
0.05
.002)
0.00(.000) Min
(Stand off)
13.40
(.528
11.80
(.465
±
0.20
8.00
±
0.20
.008)
±
.008)
(.315
±
1.10 +0.10
–
0.05 .043 +.004
–.002
±
0.20
(Mounting height)
±
.008)
0.55(.0217)
TYP
0.10(.004)
7.15(.281)
REF
12.40
(.488
±
0.20
0.50
±
0.10
.004)
0.20
(.008
±
0.10
M
0.09(.004)
±
.008)
(.020
±
±
.004)
Dimensions in mm (inches).
Note: The values in parentheses are reference values.
©2005-2008 FUJITSU MICROELECTRONICS LIMITED F28062S-c-3-4
2005 FUJITSU LIMITED F28062S-c-3-3
Please confirm the latest Package dimension by following URL.
http://edevice.fujitsu.com/package/en-search/
12
DS05-13106-5E
MB85R256H
MEMO
DS05-13106-5E
13
MB85R256H
MEMO
14
DS05-13106-5E
MB85R256H
MEMO
DS05-13106-5E
15
MB85R256H
FUJITSU MICROELECTRONICS LIMITED
Shinjuku Dai-Ichi Seimei Bldg., 7-1, Nishishinjuku 2-chome,
Shinjuku-ku, Tokyo 163-0722, Japan
Tel: +81-3-5322-3329
http://jp.fujitsu.com/fml/en/
For further information please contact:
North and South America
Asia Pacific
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1250 E. Arques Avenue, M/S 333
Sunnyvale, CA 94085-5401, U.S.A.
Tel: +1-408-737-5600 Fax: +1-408-737-5999
http://www.fma.fujitsu.com/
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151 Lorong Chuan,
#05-08 New Tech Park 556741 Singapore
Tel : +65-6281-0770 Fax : +65-6281-0220
http://www.fmal.fujitsu.com/
Europe
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Rm. 3102, Bund Center, No.222 Yan An Road (E),
Shanghai 200002, China
Tel : +86-21-6146-3688 Fax : +86-21-6335-1605
http://cn.fujitsu.com/fmc/
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Pittlerstrasse 47, 63225 Langen, Germany
Tel: +49-6103-690-0 Fax: +49-6103-690-122
http://emea.fujitsu.com/microelectronics/
Korea
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10/F., World Commerce Centre, 11 Canton Road,
Tsimshatsui, Kowloon, Hong Kong
Tel : +852-2377-0226 Fax : +852-2376-3269
http://cn.fujitsu.com/fmc/en/
FUJITSU MICROELECTRONICS KOREA LTD.
206 Kosmo Tower Building, 1002 Daechi-Dong,
Gangnam-Gu, Seoul 135-280, Republic of Korea
Tel: +82-2-3484-7100 Fax: +82-2-3484-7111
http://kr.fujitsu.com/fmk/
Specifications are subject to change without notice. For further information please contact each office.
All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with sales representatives before ordering.
The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose
of reference to show examples of operations and uses of FUJITSU MICROELECTRONICS device; FUJITSU MICROELECTRONICS
does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating
the device based on such information, you must assume any responsibility arising out of such use of the information.
FUJITSU MICROELECTRONICS assumes no liability for any damages whatsoever arising out of the use of the information.
Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use
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or any third party or does FUJITSU MICROELECTRONICS warrant non-infringement of any third-party's intellectual property right or
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property rights or other rights of third parties which would result from the use of information contained herein.
The products described in this document are designed, developed and manufactured as contemplated for general use, including without
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured
as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to
the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear
facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon
system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that FUJITSU MICROELECTRONICS will not be liable against you and/or any third party for any claims or damages arising
in connection with above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by
incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current
levels and other abnormal operating conditions.
Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of
the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.
The company names and brand names herein are the trademarks or registered trademarks of their respective owners.
Edited: Sales Promotion Department
相关型号：
MB85R256HPFTN-G-BNDAE1
Memory Circuit, 32KX8, CMOS, PDSO28, 11.80 X 8 MM, 1.20 MM HEIGHT, 0.55 MM PITCH, PLASTIC, TSOP1-28
FUJITSU
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