2SK3650-01S [FUJI]
N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET
| 型号： | 2SK3650-01S |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | N-CHANNEL SILICON POWER MOSFET |
| 文件： | 总4页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3650-01L,S,SJ
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
P4
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
150
Unit
V
Drain-source voltage
VDSX *5
ID
120
±33
±132
±30
33
V
Continuous drain current
Pulsed drain current
A
Equivalent circuit schematic
ID(puls]
VGS
A
Gate-source voltage
V
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
IAR *2
Drain(D)
A
EAS*1
169
20
mJ
kV/µs
kV/µs
W
dVDS/dt *4
dV/dt *3
PD Ta=25
Tc=25
Tch
5
°C
°C
1.67
Gate(G)
150
+150
-55 to +150
Source(S)
Operating and storage
temperature range
°C
°C
Tstg
<
*1 L=228µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph
*2 Tch=150°C
<
<
<
<
*4 VDS 150V *5 VGS=-30V
*3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Item
Test Conditions
µ
Drain-source breakdown voltaget
Gate threshold voltage
V
ID=250 A
VGS=0V
VDS=VGS
150
µ
V
ID= 250 A
3.0
5.0
µA
25
VDS=150V VGS=0V
VDS=120V VGS=0V
Tch=25°C
Zero gate voltage drain current
IDSS
Tch=125°C
250
IGSS
RDS(on)
gfs
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
VGS=±30V
ID=11.5A
VDS=0V
10
54
100
VGS=10V
mΩ
S
70
8
16
ID=11.5A VDS=25V
VDS=75V
Ciss
pF
1150
200
17
1730
300
26
Coss
Crss
td(on)
tr
Output capacitance
VGS=0V
Reverse transfer capacitance
Turn-on time ton
f=1MHz
ns
VCC=48V ID=11.5A
VGS=10V
13
20
15
23
td(off)
tf
Turn-off time toff
34
51
RGS=10 Ω
15
23
QG
QGS
QGD
IAV
nC
Total Gate Charge
34
51
VCC=48V
ID=23A
Gate-Source Charge
Gate-Drain Charge
9
13.5
19
12.5
VGS=10V
µ
33
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
L=228 H Tch=25°C
VSD
trr
Qrr
1.10
130
0.6
1.65
V
IF=23A VGS=0V Tch=25°C
IF=23A VGS=0V
-di/dt=100A/µs
Tch=25°C
ns
µC
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
0.833
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
75.0
°C/W
1
2SK3650-01L,S,SJ
FUJI POWER MOSFET
Characteristics
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
Allowable Power Dissipation
PD=f(Tc)
50
40
30
20
10
0
200
175
150
125
100
75
20V
10V
8V
7.5V
7.0V
6.5V
6.0V
50
VGS=5.5V
25
0
0
1
2
3
4
5
6
0
25
50
75
100
125
150
Tc [°C]
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
100
10
1
0.1
0.1
0.1
0
1
2
3
4
5
6
7
8
9
10
1
10
100
ID [A]
VGS[V]
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=11.5A,VGS=10V
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
200
180
160
140
120
100
80
0.30
0.25
0.20
0.15
0.10
0.05
0.00
VGS=
5.5V
7.0V
6.5V
6.0V
7.5V
max.
typ.
8V
10V
60
40
20V
20
0
-50
-25
0
25
50
75
100 125 150
0
5
10 15 20 25 30 35 40 45 50
ID [A]
Tch [°C]
2
2SK3650-01L,S,SJ
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
Typical Gate Charge Characteristics
VGS=f(Qg):ID=23A, Tch=25°C
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
14
12
10
8
Vcc= 36V
max.
48V
72V
min.
6
4
2
0
-50
-25
0
25
50
75
100 125 150
0
5
10 15 20 25 30 35 40 45 50
Qg [C]
Tch [°C]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
100
10
1
10n
Ciss
1n
Coss
100p
10p
Crss
102
0.1
10-1
100
101
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VDS [V]
VSD [V]
Maximum Avalanche Energy vs. starting Tch
EAS=f(starting Tch):Vcc=48V
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V, VGS=10V, RG=10Ω
103
102
101
100
500
IAS=14A
400
300
200
100
0
IAS=20A
IAS=33A
td(off)
tf
td(on)
tr
10-1
100
101
102
0
25
50
75
100
125
150
starting Tch [°C]
ID [A]
3
2SK3650-01L,S,SJ
FUJI POWER MOSFET
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=48V
102
101
100
10-1
10-2
Single Pulse
10-8
10-7
10-6
10-5
10-4
10-3
10-2
tAV [sec]
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
Outline Drawings (mm)
Type(S)
Type(L)
Type(SJ)
4
1
2
3
1
2
3
4
1
2
3
1
2 3
http://www.fujielectric.co.jp/denshi/scd/
4
©2020 ICPDF网 联系我们和版权申明